High Mobility and Quantum Well Transistors
Subtitle: Design and TCAD Simulation
By: by Geert Hellings, Kristin De Meyer
Contributors: De Meyer, Kristin; SpringerLink (Online service)
Series: Springer Series in Advanced Microelectronics -- 42
Publisher: Springer Netherlands; Imprint: Springer
Published: 2013
Place of publication: Dordrecht
Language: eng
Format: [electronic resource] :
Number of pages: 140
ISBN-13: 9789400763401
Subjects: Systems engineering; Electronic Circuits and Devices; Circuits and Systems; Semiconductors; Optical and Electronic Materials; Optical materials; Engineering; Nanotechnology and Microengineering; Physics
Description: For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Table of contents: title: List of Abbreviations and Symbols; title: 1 Introduction; title: 2 S/D Junctions in Ge: experimental; title: 3 TCAD Simulation and Modeling of Ion Implants in Germanium; title: 4 Electrical TCAD Simulations and Modeling in Germanium; title: 5 Investigation of Quantum Well Transistors for Scaled Technologies; title: 6 Implant-Free Quantum Well FETs: Experimental investigation; title: 7 Conclusions Future Work and Outlook; title: Bibliography; title: List of Publications.