Design of shallow p-type dopants in ZnO
Subtitle: preprint
By: S.H. Wei, J. Li, and Y. Yan
Contributors: Li, Jian; Yan, Yixun; National Renewable Energy Laboratory (U.S.)
Series: NREL/CP -- 590-42522; Conference paper (National Renewable Energy Laboratory (U.S.)) -- 590-42522.
Publisher: National Renewable Energy Laboratory
Published: 2008
Place of publication: Golden, Colo
Language: eng
Format: [electronic resource] :
Subjects: Semiconductor doping; Doped semiconductors; Crystals; Defects
Notes: Title from title screen (viewed June 9, 2008).

"May 2008."

"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008."

"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337."

Includes bibliographical references (p. 4).

Conference paper; 11-16 May 2008.

PVA72213.