Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage
Subtitle: ion implanted dopants in silicon
By: John Albers ; sponsored by Defense Advanced Research Projects Agency.
Contributors: United States. Defense Advanced Research Projects Agency.; United States. National Bureau of Standards.
Series: NBS special publication ;; 400-79; Semiconductor measurement technology
Publisher: U.S. Dept. of Commerce, National Bureau of Standards; For sale by the Supt. of Docs., U.S. G.P.O.
Published: 1987
Place of publication: Gaithersburg, MD; Washington, DC
Language: eng
Number of pages: 667
Subjects: Semiconductor doping -- Computer simulation.; Ion implantation -- Computer simulation.; Monte Carlo method.
Notes: Bibliography: p. 24-26.
"September 1987."