Semiconductor Interfaces at the Sub-Nanometer Scale
By: edited by H. W. M. Salemink, M. D. Pashley
Contributors: Pashley, M. D.
Series: NATO ASI Series, Series E: Applied Sciences -- 243; NATO ASI Series, Series E: Applied Sciences -- 243
Publisher: Springer Netherlands
Published: 1993
Place of publication: Dordrecht
Language: eng
Format: [electronic resource] /
Number of pages: 256
ISBN-13: 9789401049009; 9789401120340
Subjects: Surfaces (Physics); Optical materials
Other titles: Proceedings of the NATO Advanced Research Workshop on The Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, August 31-September 2, 1992
Description: This book comprises review papers by leading scientists in the fields of semiconductor growth, analysis and device structures. In particular, it contains reviews of the state-of-the-art in the following topics: (a) theoretical and experimental treatment of epitaxial growth; (b) electronic bandstructure on the atomic to nanometer scale in semiconductor interfaces; (c) analysis of semiconductor interfaces and superlattices by photo electrospectroscopy, HRTEM and STM; (d) discussion of relevant properties and criteria in Group IV and III--V devices. All the reviews place an emphasis on the relevant properties on the atomic to nanometer scale as this is extremely important for superlattice structures and devices. For those working in semiconductor superlattices, MBE and ultra-thin-layer (quantum) phenomena: the book provides a state of the art review and extensive reference to recent work.
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