InGaAs field-effect transistors
By: Klaus Heime.
Series: Electronic & electrical engineering research studies.; 1
Publisher: Research Studies Press; Wiley
Published: 1989
Place of publication: Taunton, Somerset, England; New York
Language: eng
Number of pages: 218
Subjects: Metal semiconductor field-effect transistors.; Gallium arsenide semiconductors.
Notes: Includes bibliographies and index.