Characterisation of degradation and failure phenomena in MOS devices
By: Paul Pfaffli.
Contributors: Eidgenössische Technische Hochschule Zürich.
Edition: 1. Aufl.
Series: Series in microelectronics -- v. 88.
Publisher: Hartung-Gorre
Published: 1999
Place of publication: Konstanz [Germany]
Language: eng
Number of pages: 159
Subjects: Metal oxide semiconductors, Complementary -- Testing.; Semiconductors -- Failures.
Notes: "Nachdruck der Diss. ETH, no. 13274".

Thesis--ETH Zurich, 1999.

Summary in German.