Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry
By: Brian G. Rennex.
Contributors: National Institute of Standards and Technology (U.S.)
Series: Standard reference materials; NIST special publication ;; 260-121
Publisher: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology; For sale by the Supt. of Docs., U.S. G.P.O.
Published: 1994
Place of publication: Gaithersburg, MD; Washington, DC
Language: eng
Number of pages: 55
Subjects: Silicon -- Oxygen content -- Measurement -- Standards.
Notes: Includes bibliographical references (p. 15).
"Issued August 1994."