Impurities Confined in Quantum Structures
By: by Per Olof Holtz, Qing Xiang Zhao
Contributors: Zhao, Q. X. (Qing Xiang)
Series: Springer Series in Materials Science -- 77; Springer series in materials science -- 77.
Publisher: Springer Berlin Heidelberg
Published: 2004
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 138
ISBN-13: 9783642622281; 9783642186578
Subjects: Electronics; Optical materials
Description: The introduction of impurities, even in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their applications. In this book, the progress on elucidating the physical properties of impurities confined in quantum structures are reviewed with an emphasis on the experimental aspects. The major results of various kinds of characterization, such as infrared spectroscopy, Raman measurements, luminescence characterization, perturbation spectroscopy and dynamical studies of the confined impurities are reviewed, but also the theoretical basis to calculate the electronic structure of the confined donors and acceptors are presented. This monograph also describes more specific aspects of the confined impurities such as the properties in the high doping regime and the effects of hydrogen passivation.
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Table of contents: title: Quantum Wells; title: Impurities in Bulk; title: Confined Neutral Donor States; title: Negatively Charged Donor States; title: Confined Acceptor States; title: High Doping Regime; title: Hydrogen Passivation; title: Conclusions.