SiGe and Si strained-layer epitaxy for silicon heterostructure devices
By: edited by John D. Cressler.
Contributors: Cressler, John D.
Publisher: CRC Press/Taylor & Francis
Published: 2008
Place of publication: Boca Raton
Language: eng
ISBN-13: 9781420066852
Subjects: Bipolar transistors -- Materials; Heterostructures; Silicon -- Electric properties; Epitaxy
Other titles: Silicon heterostructure handbook.
Notes: "The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.

Includes bibliographical references and index.