A strain relief model for the InxGa1-xAs/GaAs heteroepitaxial system and its application toward the growth of low-dislocation density large in content InxGa1-xAs
By: by Viswanath Krishnamoorthy
Published: 1992
Language: eng
Number of pages: 127
Notes: Typescript.

Vita.

Thesis (Ph. D.)--University of Florida, 1992.

Includes bibliographical references (leaves 123-126).