Gas source molecular beam epitaxy
Subtitle: growth and properties of phosphorus containing III-V heterostructures
By: M.B. Panish, H. Temkin.
Contributors: Temkin, H.
Series: Springer series in materials sciences ;; 26; Springer series in materials science ;; v. 26.
Publisher: Springer-Verlag
Published: 1993
Place of publication: Berlin; New York
Language: eng
Number of pages: 428
Subjects: Molecular beam epitaxy.; Gallium arsenide semiconductors.
Notes: Includes bibliographical references (p. 399-421) and index.