Applications of admittance spectroscopy in photovoltaic devices beyond majority-carrier trapping defects
Subtitle: preprint
By: Jian V. Li ... [et al.].
Contributors: National Renewable Energy Laboratory (U.S.); IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
Series: NREL/CP -- 5200-50697; Conference paper (National Renewable Energy Laboratory (U.S.)) -- NREL/CP-5200-50697.
Publisher: National Renewable Energy Laboratory
Published: 2011
Place of publication: Golden, CO]
Language: eng
Format: [electronic resource] :
Subjects: Photovoltaic cells; Research; Design and construction; Spectrum analysis; Solar cells
Description: Admittance spectroscopy is commonly used to characterize majority-carrier trapping defects. In today's practical photovoltaic devices, however, a number of other physical mechanisms may contribute to the admittance measurement and interfere with the data interpretation. Such challenges arise due to the violation of basic assumptions of conventional admittance spectroscopy such as single-junction, ohmic contact, highly conductive absorbers, and measurement in reverse bias. We exploit such violations to devise admittance spectroscopy-based methods for studying the respective origins of "interference": majority-carrier mobility, non-ohmic contact potential barrier, minority-carrier inversion at hetero-interface, and minority-carrier lifetime in a device environment. These methods are applied to a variety of photovoltaic technologies: CdTe, Cu(In,Ga)Se2, Si HIT cells, and organic photovoltaic materials.
Notes: Title from title screen (viewed August 1, 2011).

"July 2011."

"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."

Includes bibliographical references (p. 4).

DE-AC36-08GO28308

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