Effect of crystal defects on minority carrier diffusion length in 6H SiC measured using the electron beam induced current method
By: M. Tabib-Azar.
Contributors: United States. National Aeronautics and Space Administration.
Series: [NASA contractor report] -- 205866.; NASA contractor report -- NASA CR-205866.
Publisher: National Aeronautics and Space Administration; National Technical Information Service, distributor
Published: 1997
Place of publication: [Washington, DC; Springfield, Va
Language: eng
Format: Microform
Subjects: Crystal defects.; Diffusion length.; Silicon carbides.; Minority carriers.
Notes: Shipping list no.: 98-0441-M.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1997] 1 microfiche.