Fundamental Aspects of Silicon Oxidation
By: edited by Yves J. Chabal
Series: Springer Series in Materials Science -- 46; Springer series in materials science -- 46.
Publisher: Springer Berlin Heidelberg
Published: 2001
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 262
ISBN-13: 9783642625831; 9783642567117
Subjects: Electronics; Surfaces (Physics); Optical materials
Description: This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides).
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Table of contents: title: 1. Introduction; title: 2. Morphological Aspects of Silicon Oxidation in Aqueous Solutions; title: 3. Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation; title: 4. Oxidation of H-Terminated Silicon; title: 5. Layer-by-Layer Oxidation of Si(001) Surfaces; title: 6. Atomic Dynamics During Oxidation; title: 7. First Principles Quantum Chemical Investigations of Silicon Oxidation; title: 8. Vibrational Studies of Ultra-Thin Oxides and Initial Silicon Oxidation; title: 9. Ion Beam Studies of Silicon Oxidation and Oxynitridation; title: 10. Local and Global Bonding at the Si-SiO2 Interface; title: 11. Evolution of the Interfacial Electronic Structure During Thermal Oxidation; title: 12. Structure and Energetics of the Interface Between Si and Amorphous SiO2.