SiC Materials and Devices, Volume 52 (Semiconductors and Semimetals)
Contributors: Robert K. Willardson (Series Editor); Eicke R. Weber (Series Editor)
Publisher: Academic Press
Published: May 27, 1998
Language: eng
Number of pages: 420
ISBN-13: 9780127521602
First sentence: Wide energy bandgaps, high thermal conductivity, high saturated electron drift velocities, and high-breakdown electric fields make silicon carbide (SiC) a candidate of choice for high-temperature, high-speed, high-frequency, and high-power applications.