Surface passivation for III-V semiconductor processing
Subtitle: stable gallium sulphide films by MOCVD
By: Andrew N. MacInnes ... [et al.].
Contributors: MacInnes, Andrew N.; United States. National Aeronautics and Space Administration.
Series: NASA technical memorandum -- 106761.
Publisher: National Aeronautics and Space Administration; National Technical Information Service, distributor
Published: 1994
Place of publication: [Washington, D.C.]; [Springfield, Va
Language: eng
Format: Microform
Subjects: Gallium.; Gallium arsenides.; Metalorganic chemical vapor deposition.; MIS (Semiconductors); Passivity.; Semiconductors (Materials); Structural analysis.; Sulfides.; Vapor deposition.
Other titles: Surface passivation for 3-5 semiconductor processing.
Notes: Distributed to depository libraries in microfiche.

Shipping list no.: 95-0275-M.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1994] 1 microfiche.