Theory and experiments of electron-hole recombination at Si/SiO2 interface traps and tunneling in thin oxide MOS transistors
Publisher: Gainesville, FL
Published: 2000
Language: eng
Number of pages: 208
Subjects: Metal oxide semiconductors.
Description: <a href="http://uf.catalog.fcla.edu/uf.jsp?st=UF002640401&ix=pm&I=0&V=D&pm=1" rel="nofollow">http://uf.catalog.fcla.edu/uf.jsp?st=UF002640401&ix=pm&I=0&V=D&pm=1</a>