Noise modelling of silicon germanium heterojunction bipolar transistors at millimetre-wave frequencies.
Published: 2006
Language: eng
Number of pages: 101
ISBN-13: 9780494161296
Description: Using 2D device simulations, it is predicted that the cutoff frequencies of SiGe HBTs can be scaled beyond 500GHz. These devices have the potential to enable advanced millimetre-wave circuits. However, shot noise correlation, which is captured through noise transit time, becomes increasingly important as circuit designers continue to push the operating frequencies of the circuits.The technique for extracting the SiGe HBT noise parameters only from the measured y-parameters is extended to account for the presence of correlation. Unlike earlier publications, this method does not need to fit the noise transit time to measured noise data. The technique was validated using 2D device simulations and measured noise parameter data. It was found that the NFMIN of SiGe HBTs with &fnof; T/&fnof;MAX of 160GHz is approximately 1.5dB lower at 60GHz when noise correlation is accounted for. However, for these devices, noise correlation proves to be insignificant below 18GHz.
Notes: Source: Masters Abstracts International, Volume: 44-06, page: 2940.

Advisor: Sorin P. Voinigescu.

Thesis (M.A.Sc.)--University of Toronto, 2006.

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