Rutherford backscattering in ion-implanted and pulsed laser annealed Si and Ge
Publisher: Kansas State University
Published: 1985
Language: eng
Number of pages: 78
Subjects: Backscattering; Ion implantation; Semiconductors--Impurity distribution; Semiconductor lasers; Germanium--Spectra; Silicon--Spectra
Description: This volume was digitized and made accessible online due to deterioration of the original print copy.