The Drift Diffusion Equation and Its Applications in MOSFET Modeling
By: by Wilfried Hänsch
Series: Computational Microelectronics, 0179-0307; Computational microelectronics
Publisher: Springer Vienna
Published: 1991
Place of publication: Vienna
Language: eng
Format: [electronic resource] /
Number of pages: 271
ISBN-13: 9783709190951
Description: The drift diffusion equation and its applications in MOSFET modeling will bridge the gap between phe-nomenological modeling and a rigorous microscopic approach. The five chapters cover: Wigner's and Boltzmann's equation, the relaxation time approximation and the hydro dynamic equations for the case of strong non equilibrium, charge transport in an inversion channel, analytical approaches to determine the high energy distribution of carriers in high electric fields, and the spatial and temporal built up of charges in the gate oxide of a MOSFET device under electrical stress.
Table of contents: title: Boltzmann's Equation; title: Hydrodynamic Model; title: Carrier Transport in an Inversion Channel; title: High Energetic Carriers; title: Degradation; title: Appendices: Perturbation Theory and Diagram Technique; Inversion Channel Particle-Density Distribution in Equilibrium.-