Process and device simulation for MOS-VLSI circuits
By: edited by Paolo Antognetti ... [et al.].
Contributors: Antognetti, Paolo.
Series: NATO ASI series.; no. 62
Publisher: Nijhoff; Distributors for the U.S. and Canada, Kluwer Boston
Published: 1983
Place of publication: Boston; Hingham, MA
Language: eng
Number of pages: 619
Subjects: Integrated circuits -- Very large scale integration -- Simulation methods -- Congresses.; Metal oxide semiconductors -- Simulation methods -- Congresses.
Notes: Includes bibliographical references.
"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
"Published in cooperation with NATO Scientific Affairs Division."