High voltage MOS device design
Subtitle: injection enhancement and negative gate capacitance
By: Ichiro Omura
Edition: 1st ed.
Series: Series in microelectronics -- 150
Publisher: Hartung-Gorre Verlag
Published: 2005
Place of publication: Konstanz
Language: eng
Number of pages: 120
Subjects: Metal oxide semiconductors; Design and construction
Notes: Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 14049, c2000.

Includes bibliographical references (p.114-120).