A study of reactive ion etching of gallium arsenide in mixtures of methane and hydrogen plasmas
By: Hossein Fariborz Sahafi.
Contributors: Middlesex University. School of Electronic Engineering.
Publisher: [Middlesex University]
Published: 1992
Place of publication: [London]
Language: eng
Number of pages: 188
Notes: Thesis submitted in partial fulfilment of the requirements for the degree of Doctor of Philosophy.