Simulations of high speed SiGe heterojunction bipolar transistors and properties of SiC Schottky contacts
By: Magnus Karlsteen
Contributors: Universitetet i Linköping. Department of Physics and Measurement Technology; Universitetet i Linköping
Publisher: Department of Physics and Measurement Technology, Linköping University
Published: 1994
Place of publication: Linköping
Language: eng
Number of pages: 196
Notes: Thesis (doctoral)--Linköping University, 1994.