Crystal growth of device quality GaAs in space
By: submitted by Harry C. Gatos and Jacek Lagowski
Contributors: Lagowski, J; United States. National Aeronautics and Space Administration; Massachusetts Institute of Technology. Dept. of Materials Science and Engineering
Series: NASA-CR -- 173148; NASA contractor report -- 173148
Publisher: National Aeronautics and Space Administration
Published: 1983
Place of publication: Washington, D.C.?
Language: eng
Format: Microform
Subjects: Gallium compounds; Integrated circuits
Notes: At head of title: Annual report

"Department of Materials Science and Engineering, Massachusetts Institute of Technology."

"Period April 1, 1982 to March 31, 1983."

"June 1983."

"NSG 7331."

"N84-17013"--Microfiche header

Includes bibliographical references

Microfiche. [Washington, D.C.? : National Aeronautics and Space Administration, 1983?]. 1 microfiche ; 11 x 15 cm