Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector
By: by Kiuchul Hwang
Published: 1990
Language: eng
Number of pages: 123
Subjects: Optical detectors; Optoelectronic devices; Diodes, Schottky-barrier; Indium gallium arsenide; Indium aluminum arsenide; Passivity (Chemistry); Integrated circuits; Passivation
Notes: Typescript.

Vita.

Thesis (Ph. D.)--University of Florida, 1990.

Includes bibliographical references (leaves 116-122).