New Insulators Devices and Radiation Effects
Publisher: Elsevier
Published: 1999
Place of publication: Burlington
Language: eng
Format: [electronic resource]
Number of pages: 967
ISBN-13: 9780080534763
Description: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabiliti.
Notes: Description based on print version record.
Table of contents: title: Front Cover; Instabilities in Silicon Devices: New Insulators, Devices and Radiation Effects; Copyright Page; Introduction to Volume 3; CONTENTS OF VOLUME 3; List of contributors; Part I: Updates and additions to Volumes 1 and 2; Chapter 1. Silica, silicon nitride and oxynitride thin films: An overview of fabrication techniques, properties and applications; Chapter 2. A review of buried oxide structures and SOI technologies; Chapter 3. Dielectric breakdown in silica: A survey of test methods.; title: Chapter 4. Hot carrier injections in silica and related instabilities in submicrometer MOS transistorsChapter 5. Multilayer dielectrics for memory applications; Chapter 6. Charge pumping techniques: Their use for diagnosis and interface state studies in MOS transistors; Chapter 7. The study of thermal nitridation and reoxidation mechanisms using isotopic tracing methods; Part II: Silicon devices in radiation environments; Chapter 8. The space radiation environment; Chapter 9. An overview of radiation-matter in.