Quantum effects in MOS devices
By: Andreas Wettstein
Edition: 1. Aufl.
Series: Series in microelectronics -- v. 94
Publisher: Hartung-Gorre
Published: 2000
Place of publication: Konstanz
Language: eng
Number of pages: 131
Subjects: Quantum theory; Metal oxide semiconductors
Notes: Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 13649.

Includes bibliographical references (p. 113-121) and indexes.

Summary in German.