The application of the GaInAs/GaAs heterojunction in an infra-red photodector device: a preliminary investigation intothe fabrication and properties of the heterojunction
Subtitle: dissertation [presented for the] N.Sc. Degree in Applied Solid State Physics.
Contributors: Brighton College of Technology. Department of Applied Physics.
Publisher: Brighton College of Technology, Department of Applied Physics
Published: 1968
Place of publication: Brighton
Language: eng