EDMO2003
Subtitle: the 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications : 17-18 November, 2003, University of Central Florida, Orlando, Florida, USA
By: IEEE [and others]
Contributors: Institute of Electrical and Electronics Engineers
Publisher: IEEE
Published: 2003
Place of publication: Piscataway, N.J
Language: eng
Number of pages: 303
Copyright date: 2003
Subjects: Microwave devices; Congresses; Optoelectronic devices
Other titles: Electron devices for microwave and optoelectronic applications; Symposium on Electron Devices for Microwave and Optoelectronic Applications; EDMO 2003
Notes: "IEEE catalog number: 03TH8691"--T.p.

Includes bibliographical references and author index.

Also available via the World Wide Web.
Table of contents: title: Novel wide band gap devices using strain energy band engineering  -- Michael S. Shur and Asif Khan; title: Progress and challenges of GaN-based microwave HEMTs, amplifiers and novel spin devices  -- S. J. Pearton, F. Ren, B. P. Gila, C. R. Abernathy, A. P. Zhang, N. Moser, R. C. Fitch, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via and A. Crespo; title: Modeling of GaN electron mobility  -- Ibrahim M. Abdel-Motaleb and Roman Y. Korotkov; title: Implant isolation of both n-type InP and InGaAs by iron irradiation: Effect of post-implant annealing temperature  -- P. Too, S. Ahmed, R. Jakiela, A. Barcz, A. Kozanecki, B. J. Sealy and R. Gwilliam; title: Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects In GaAs-based HFET's  -- G. Verzellesi, A. F. Basile, A. Cavallini, A. Castaldini, C. Lanzieri and C. Canali; title: CMOS Scaling toward sub-10 nm regime  -- Hiroshi Iwai; title: The Impact of Semiconductor Technology Scaling on CMOS Radio  -- Kwyro Lee; title: Issues of BSIM4 model for HF simulation  -- Xiaofang Gao and Waisum Wong; title: A Trench gate LDMOS for RF application  -- P. H. Wilson; title: High power and high linearity electroabsorption modulator for high speed analog RF link  -- P. K. L. Yu, W. S. C. Chang, I. Shubin, J. X. Chen, Y. Wu, G. Li, W. X. Chen and Y. Zhuang; title: SiGe HBT technology design approaches for RF-applications  -- Mikael Ostling and B. Gunnar Malm; title: High-speed photodiodes with reduced dark current and enhanced responsivity in the blue/uv spectra  -- M. Hohenbild, P. Seegebrecht, H. Pless and W. Einbrodt; title: Speed-enhanced OEIC with area-efficient charge pump and shunt regulator  -- R. Swoboda, J. Knorr and H. Zimmermann; title: Waveguide resonators in planar form for oscillator and filter applications  -- H. Koulouzis, L. Lalehparvar and D. Budimir; title: L-Band, high efficiency 25 watt power amplifier using PHEMT for base station system  -- Y. H. Wang, H. Z. Liu, H. K. Huang, C. C. Wang, C. H. Chang, W. Wu, C. L. Wu and C. S. Chang; title: Analysis of gate misalignment effect on the threshold voltage of double-gate (DG) ultrathin fully-depleted (FD) silicon-on-insulator (SOI) NMOS devices using a compact model considering fringing electric field effect  -- J. B. Kuo, E. C. Sun and M. T. Lin; title: A low noise composite-channel metamorphic HEMT for wireless communication applications  -- C. Y. Lu, K. S. Chen, H. M. Lee, E. Y. Chang, S. H. Chen, Y. C. Lin and G. J. Chen; title: A 26 GHz low-noise amplifier in 0.18[mu]m CMOS technology  -- Kyung-Wan Yu, Yin-Lung Lu, Daquan Huang, Da-Chiang Chang, Victor Liang and M. Frank Chang; title: Estimation and compensation of IQ-Imbalances in direct down converters  -- A. Pascht, T. Bitzer, T. Bohn and F. Endress; title: A 60+ GHz packaged static divider implemented in InP DHBT technology  -- Debabani Choudhury, Mehran Mokhtari, Ross L. Bowen, James A. Foschaar and Joseph F. Jensen; title: An overview of device behavior and modeling of CMOS technology for RF IC design  -- Yuhua Cheng; title: Multi-gate 3-D SOI MOSFETs as the mainstream technology in high speed CMOS applications  -- Adelmo Ortiz-Conde and Francisco J. Garcia Sanchez; title: Soft breakdown on deep sub-micrometer RF nMOSFET performance  -- Yi Liu, Anwar Sadat, J. S. Yuan and Hong Yang; title: Wide-band low-power CMOS current mode transimpedance preamplifier  -- Rui Tao and Manfred Berroth; title: Qantum efficiency of CMOS integrated silicon n+pp+ light-emitting devices as function of current density  -- Lukas W. Snyman, Herzl Aharoni and Monuko du Plessis; title: Use of MeV ion implantation for isolation of GaAs and InP-based HBTs  -- Ali A. Rezazadeh; title: Silicon integrated photonics: potentials and promises  -- Hei Wong; title: Modeling of the trap related parasitic effects in metamorphic HEMT on GaAs substrate  -- O. Pajona, C. Auppetit - Berthelemot and J. M. Dumas; title: Self-consistent physics-based and electromagnetic model of travelling-wave semiconductor RF photonic devices  -- F. Bertazzi, F. Cappelluti, F. Bonani, M. Goano and G. Ghione; title: A novel physically based photodiode model for optoelectronic circuit simulations  -- T. Naeve, M. Hohenbild and P. Seegrebrecht; title: A review on ESD protection for RF and microwave ICs  -- Albert Wang, H. Feng, G. Chen, R. Zhan, H. Xie, Q. Wu and X. Guan; title: CMOS RF device and circuit reliability  -- Jiann S. Yuan; title: Accurate CAD modeling of metal conduction losses at terahertz frequencies  -- Stepan Lucyszyn; title: A new wideband modeling technique for spiral inductors  -- Ming Hsiang Chiou and Klaus Y. J. Hsu; title: Electronic post-detection filter for multigigabit optical communication systems  -- Paulo P. Monteiro, Manuel Violas, Rui Ribeiro and Jose Ferreira da Rocha; title: Comparative analysis of lumped and distributed reflective shunt attenuators  -- Deji Akinwande; title: Recent advances in GaN HEMT development  -- F. Schwierz and O. Ambacher; title: Thermal processing effects in proton-isolated n-type GaAs devices  -- S. Ahmed, K. Amirov, U. Larsson, P. Too, B. J. Sealy and R. Gwilliam; title: Investigation of the electron non-radiative transition in GaInNAs/GaAs single quantum well structures by using a piezoelectric photothermal spectroscopy  -- Tetsuo Ikari, Kenji Imai, Sin-ichi Fukushima and Masahiko Kondow; title: Understanding pulsed IV measurement waveforms  -- Charles P. Baylis II and Lawrence P. Dunleavy; title: Modeling of NRD guide beam lead diode devices for millimeter-wave applications  -- Futoshi Kuroki, Satoru Shinke and Tsukasa Yoneyama; title: Linearity and power optimization of a microwave CMOS gilbert cell mixer  -- C. Yu and J. S. Yuan; title: Application of acoustical activity in ferroelectrics for control of light in intensity  -- Farkhad R. Akhmedzhanov; title: Heat flow models for Silicon-On-Insulator structures  -- Ming-C. Cheng and Feixia Yu; title: A novel technique to measure propagation loss of optical waveguides  -- Samit Barai, A. Selvarajan, T. Srinivas, T. Madhan and R. Fazludeen; title: Scaling of RF Linearity in DG and SOI MOSFETs  -- W. Ma, S. Kaya and A. Asenov; title: Scattering of chiral photonic crystal  -- Thomas X. Wu and Xiaomin Yang; title: An ultraCompact 4x4 photonic switch based on tapered multimode interference  -- Wen-Ching Chang, Chun-Hung Lien, Pi-Jen Tsai and Hung-Jen Wang; title: Integration of BaxSr1-xTiO3 thin films with AIGaN/GaN HEMT circuits  -- Hongtao Xu, Nadia K. Pervez, Peter J. Hansen, Christopher Sanabria, Likun Shen, Stacia Keller, Umesh K. Mishra and Robert A. York; title: Electron transport characteristics in wurtzite phase GaN and SiC for high-power and high-temperature device modeling  -- H. Arabshahi; title: The design of the LD's driving circuit in laser proximity fuze system based on the double range gate detection  -- B. L. Chen, H. Zhang and Ji Tiegang; title: Reflectivity analysus of the bragg reflector based on periodic structures of different thin layers reflectivity -- M. Purica, E. Budianu, M. Kusko and D. Dragoman.