The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon
By: W.R. Thurber ... [et al.].
Contributors: Thurber, W. Robert.
Series: Semiconductor measurement technology; NBS special publication ;; 400-64
Publisher: U.S. Dept. of Commerce, National Bureau of Standards; For sale by the Supt. of Docs., U.S. G.P.O.
Published: 1981
Place of publication: Washington, D.C
Language: eng
Number of pages: 47
Subjects: Silicon -- Defects.; Semiconductor doping.; Electron mobility.; Electric resistance.
Notes: Includes bibliographical references.
"Issued May 1981."