A channeled ion energy loss study of the surfactant-mediated growth of Ge on Si(100)
By: by Mark Andrew Boshart
Published: 1996
Language: eng
Number of pages: 213
Subjects: Channeling (Physics)
Notes: Typescript.

Vita.

Thesis (Ph. D.)--University of Florida, 1996.

Includes bibliographical references (leaves 204-212).

Adviser: L. Seiberling