Low-dimensional structures in semiconductors
Subtitle: from basic physics to applications
By: edited by A.R. Peaker, H.G. Grimmeiss
Contributors: NATO Advanced Study Institute on "Low Dimensional Structures in Semiconductors: from Basic Physics to Applications" (1990 : Erice, Italy)
Series: NATO ASI Series, Series B: Physics -- 281; NATO ASI series -- v. 281.
Publisher: Springer
Published: 1991
Place of publication: Boston, MA
Language: eng
Format: [electronic resource] :
Number of pages: 226
ISBN-13: 9781489906236; 9781489906250
Subjects: Condensed Matter Physics; Spectroscopy and Microscopy; Low-dimensional semiconductors; Optical and Electronic Materials; Layer structure (Solids); Solid State Physics; Congresses; Electrical Engineering
Description: This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on 'Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.' This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.' The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The third section covers the crucial issue of interfaces while the final section deals with devices and device physics.
Notes: Reviews presented at the NATO Advance Study Institute on "Low Dimensional Structures in Semiconductors: from Basic Physics to Applications," held in Erice, Sicily, Italy, Jul. 1-14, 1990.

"Published in cooperation with NATO Scientific Affairs Division."

Includes bibliographical reference and indexes.

Print version record.
Table of contents: title: Concepts; title: The Valence Sub-Bands of Biased Semiconductor Heterostructures; title: Impurities in Semiconductors; title: Photoluminescence of 3D and Low Dimensional Systems; title: Growth and Fabrication; title: Fabrication of Artificially Layered III-V Semiconductors by Beam Epitaxy and Aspects of Additional Lateral Patterning; title: Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layers; title: Submicron Patterning Techniques for Integrated Circuits; title: Quantum Wires and Dots: The Challenge to Fabrication Technology; title: Interfaces; title: Chemical Interfaces, Structure, Properties and Relaxation; title: Capacitance-Voltage Profiling of Multilayer Semiconductor Structures; title: Devices; title: Concepts and Applications of Band Structure Engineering in Optoelectronics; title: Basic Optical Properties of Low Dimensional Structures for Applications to Lasers, Electro-Optic and Non-Linear Optical Devices; title: Hot Electron Devices; title: Hot Electrons and Degradation Effects in FET Devices; title: Indexes; title: Lecturers.