Advances in Rapid Thermal and Integrated Processing
By: edited by Fred Roozeboom
Series: NATO ASI Series, Series E: Applied Sciences -- 318; NATO ASI Series, Series E: Applied Sciences -- 318
Publisher: Springer Netherlands
Published: 1996
Place of publication: Dordrecht
Language: eng
Format: [electronic resource] /
Number of pages: 566
ISBN-13: 9789048146963; 9789401587112
Subjects: Surfaces (Physics); Physics; Optical materials
Other titles: Proceedings of the NATO Advanced Study Institute, Acquafredda di Maratea, Italy, July 3-14, 1995
Description: Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
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