Compensation in epitaxial cubic SiC films
By: B. Segall ... [et al.].
Contributors: Segall, Benjamin.; Lewis Research Center.
Series: NASA technical memorandum -- 87269.
Publisher: National Aeronautics and Space Administration, Lewis Research Center
Published: 1986
Place of publication: [Cleveland, Ohio
Language: eng
Format: Microform
Subjects: Silicon-carbide thin films.; Epitaxy.; Donor materials.; Epitaxy.; Silicon carbides.; Temperature dependence.; Transient response.; Vapor deposition.
Notes: Microfiche. [Washington, D.C. : National Aeronautics and Space Administration], 1986. 1 microfiche.