A FORTRAN program for calculating the electrical parameters of extrinsic silicon
By: R.D. Larrabee, W.R. Thurber, and W.M. Bullis.
Contributors: Thurber, W. Robert.; Bullis, W. Murray, 1930-; United States. National Bureau of Standards.; Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division.
Series: Semiconductor measurement technology; NBS special publication ;; 400-63
Publisher: U.S. Dept. of Commerce, National Bureau of Standards; For sale by the Supt. of Docs., U.S. G.P.O.
Published: 1980
Place of publication: Washington, D.C
Language: eng
Number of pages: 48
Subjects: Silicon -- Electric properties -- Data processing.; FORTRAN (Computer program language)
Notes: Includes bibliographical references.
"Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards."
"Issued October 1980."
S/N 003-003-02260-8
Item 247