Properties of doped silicon and germanium infrared detectors
By: N. Sclar.
Series: Progress in quantum electronics -- v.9, no. 3; Progress in quantum electronics -- v. 9, pt. 3.
Publisher: Pergamon Press
Published: 1984
Place of publication: Oxford [Oxfordshire]; New York
Language: eng
Number of pages: 257
Subjects: Silicon diodes.; Germanium diodes.
Notes: Cover title.

Bibliography: p. 255-257.