Nitride Semiconductors and Devices
By: by Hadis Morkoç
Series: Springer Series in Materials Science -- 32; Springer series in materials science -- 32.
Publisher: Springer Berlin Heidelberg
Published: 1999
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 489
ISBN-13: 9783642636479; 9783642585623
Subjects: Optical materials
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Table of contents: title: 1. General Properties of Nitrides; title: 2. Electronic Band Structure and Polarization Effects; title: 3. Growth and Growth Methods of Nitride Semiconductors; title: 4. Extended Defects, Point Defects, Doping Including Transition Metals, and Role of Hydrogen; title: 5. Metal Contacts to GaN and Processing; title: 6. Determination of Impurity and Carrier Concentrations; title: 7. Carrier Transport; title: 8. The p; title: n Junction; title: 9. Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures; title: 10. Light Emitting Diodes and Lighting; title: 11. Semiconductor Lasers; title: 12. Field Effect Transistors and Heterojunction Bipolar Transistors; title: 13. Ultraviolet Detectors.