Properties of lattice-matched and strained indium gallium arsenide
By: edited by Pallab Bhattacharya.
Contributors: Bhattacharya, Pallab.
Series: EMIS datareviews series -- no. 8.
Publisher: INSPEC, the Institution of Electrical Engineers
Published: 1993
Place of publication: London
Language: eng
Number of pages: 317
Subjects: Gallium arsenide semiconductors.; Indium alloys.
Notes: Includes bibliographical references and index.