Fundamentals of Nanoscaled Field Effect Transistors
By: by Amit Chaudhry
Contributors: SpringerLink (Online service)
Publisher: Springer New York; Imprint: Springer
Published: 2013
Place of publication: New York, NY
Language: eng
Format: [electronic resource] /
Number of pages: 201
ISBN-13: 9781461468226
Subjects: Systems engineering; Electronic Circuits and Devices; Circuits and Systems; Optical and Electronic Materials; Instrumentation Electronics and Microelectronics; Engineering; Nanoscale Science and Technology; Electronics; Optical materials
Description: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.In summary, this book:Covers the fundamental principles behind nanoelectronics/microelectronicsIncludes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscaleProvides some case studies to understand the issue mathematicallyFundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.
Table of contents: title: Scaling of a MOS Transistor; title: Nanoscale Effects- Gate Oxide Leakage Currents; title: Nanoscale Effects- Inversion Layer Quantization; title: Dielectrics for Nanoelectronics; title: Germanium Technology; title: Biaxial s-Si Technology; title: Uniaxial s-Si Technology; title: Alternate MOS Structures; title: Graphene Technology.