Fizicheskie svoĭstva obluchennogo kremnii͡a︡
By: [kollektiv avtorov M.S. I͡U︡nusov ... et al.].
Contributors: I͡U︡nusov, M. S.; I͡A︡dro fizikasi instituti (Ŭzbekiston SSR fanlar akademii͡a︡si)
Publisher: Izd-vo "Fan" Uzbekskoĭ SSR
Published: 1987
Place of publication: Tashkent
Language: rus
Number of pages: 148
Subjects: Semiconductors -- Effect of radiation on.; Silicon -- Effect of radiation on.
Notes: Includes bibliographical references.
At head of title: Akademii͡a︡ nauk Uzbekskoĭ SSR. Institut i͡a︡dernoĭ fiziki.