Analysis and development of high voltage bipolar transistors for BiCMOS smart power applications
By: Roland Ryter.
Series: Series in microelectronics,; v. 57
Publisher: Hartung-Gorre
Published: 1996
Place of publication: Konstanz
Language: eng
Number of pages: 200
Subjects: Metal oxide semiconductors, Complementary.; Bipolar integrated circuits.; Bipolar transistors.; Power semiconductors.
Notes: Includes bibliographical references (p. 191-200).
Summary in German.