Full-band Monte Carlo simulation of nanoscale strained silicon MOSFETs
By: Fabian M. Bufler
Edition: 1st ed.
Series: Series in microelectronics -- v. 140
Publisher: Hartung-Gorre
Published: 2003
Place of publication: Konstanz
Language: eng
Number of pages: 79
Subjects: Metal oxide semiconductor field-effect transistors; Simulation methods; Monte Carlo method
Notes: "Reprint of the Habilitation at ETH Zurich"--T.p. verso.

Includes bibliographical references (p. 65-79).