Physical MOSFET model applicable to extremely scaled CMOS IC design
Publisher: Gainesville, FL
Published: 1997
Language: eng
Number of pages: 204
Subjects: Metal oxide semiconductor field-effect transistors--Mathematical models; Metal oxide semiconductors, Complementary--design and construction; Integrated circuits--Design and construction.
Description: <a href="http://uf.catalog.fcla.edu/uf.jsp?st=UF002325290&ix=pm&I=0&V=D&pm=1" rel="nofollow">http://uf.catalog.fcla.edu/uf.jsp?st=UF002325290&ix=pm&I=0&V=D&pm=1</a>