Study of interdiffusion and defect mechanisms in Si1-x Gex single quantum well and superlattice materials
Publisher: Gainesville, FL
Published: 1999
Language: eng
Number of pages: 237
Subjects: Silicon compounds; Germanium compounds; Semiconductors.
Description: <a href="http://uf.catalog.fcla.edu/uf.jsp?st=UF002465657&ix=pm&I=0&V=D&pm=1" rel="nofollow">http://uf.catalog.fcla.edu/uf.jsp?st=UF002465657&ix=pm&I=0&V=D&pm=1</a>