Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits
By: Urs Hammer
Series: Series in microelectronics -- v. 204
Publisher: Hartung-Gorre
Published: 2010
Place of publication: Konstanz
Language: eng
Number of pages: 265
ISBN-13: 9783866283015
Subjects: Very high speed integrated circuits; Digital integrated circuits; Junction transistors; Indium phosphide; Bipolar transistors; Design and construction
Other titles: Sub-micron indium phosphide/gallium arsenide antimonide/indium phosphide double heterojunction bipolar transistors for ultra high-speed digital integrated circuits
Notes: Originally presented as the author's thesis (doctoral)--Eidgenössische Technische Hochschule Zürich, 2009.

Includes bibliographical references (p. [245]-265).

Summary in English and German.