GaAs FET principles and technology
By: James V. DiLorenzo, editor in chief, Deen D. Khandelwal, associate editor.
Contributors: DiLorenzo, James V.; Khandelwal, Deen D.
Publisher: Artech House
Published: 1982
Place of publication: Dedham, Mass
Language: eng
Number of pages: 773
Subjects: Field-effect transistors.; Gallium arsenide semiconductors.
Notes: Includes bibliographical references and index.