Lattice relaxation of Ge islands on Si(111) measured by scanning tunneling microscopy
By: by Silva Kristine Theiss
Published: 1995
Language: eng
Number of pages: 117
Subjects: Silicon; Surfaces; Analysis; Scanning tunneling microscopy; Microscopy; Lattice dynamics
Notes: Thesis (Ph. D.)--Harvard University, 1995.

Includes bibliographical references (leaves 114-117).