Hierarchical Device Simulation
Subtitle: the Monte-Carlo Perspective
By: by Christoph Jungemann, Bernd Meinerzhagen
Contributors: Meinerzhagen, Bernd
Series: Computational Microelectronics; Computational Microelectronics
Publisher: Springer Vienna
Published: 2003
Place of publication: Vienna
Language: eng
Format: [electronic resource] :
Number of pages: 254
ISBN-13: 9783709172261; 9783709160862
Subjects: Engineering; Electronics; Optical materials
Description: This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.
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Table of contents: title: Introduction; title: Semiclassical Transport Theory; title: The Monte-Carlo Method; title: Scattering Mechanisms; title: Full-Band Structure; title: Device Simulation; title: Momentum-Based Transport Models; title: Stochastic Properties of Monte-Carlo Device Simulations; title: Results; title: Subject Index.