The effect of ion implantation and impurities on the interdiffusion in Si/Ge amorphous artificial multilayers
By: by Byungwoo Park
Published: 1989
Language: eng
Number of pages: 97
Subjects: Ion implantation; Silicon; Amorphous substances; Germanium; Diffusion; Multilayered Thin films
Notes: Thesis (Ph. D.)--Harvard University, 1989.

Includes bibliographical references.