Modeling and characterization of hemt devices
By: by Chujyh Chang.
Published: 1989
Language: eng
Number of pages: 85
Subjects: Gallium arsenide semiconductors.; Modulation-doped field-effect transistors.
Notes: Typescript (photocopy).

Thesis (M.S.)--Oregon State University, 1990.

Includes bibliography (leaves 75-77).