Wide Band Gap Electronic Materials
By: edited by Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy
Contributors: Gielisse, Peter; Popovici, Galina; Spitsyn, Boris V.; Stacy, Tina
Series: NATO ASI Series, 3. High Technology -- 1; NATO ASI Series, 3. High Technology -- 1
Publisher: Springer Netherlands
Published: 1995
Place of publication: Dordrecht
Language: eng
Format: [electronic resource] /
Number of pages: 531
ISBN-13: 9789401040785; 9789401101738
Subjects: Physical organic chemistry; Surfaces (Physics); Optical materials
Other titles: Proceedings of the NATO Advanced Research Workshop on `Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994
Description: Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n-type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond. One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices. Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants. Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.
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