Gate Dielectrics and MOS ULSIs
Subtitle: Principles, Technologies and Applications
By: by Takashi Hori
Series: Springer Series in Electronics and Photonics -- 34; Springer series in electronics and photonics -- 34.
Publisher: Springer Berlin Heidelberg
Published: 1997
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] :
Number of pages: 352
ISBN-13: 9783642645877; 9783642608568
Subjects: Physics; Optical materials
Description: Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.
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