Silicon sheet growth by the inverted Stepanov technique
Subtitle: final report
By: K. M. Kim ... [et al.], RCA Laboratories ; prepared for Jet Propulsion Laboratory, California Institute of Technology
Contributors: Kim, K. M; RCA Laboratories
Series: DOE/JPL ; 954465-2
Publisher: Dept. of Energy, Division of Solar Energy; for sale by the National Technical Information Service
Published: 1977
Place of publication: [Washington]; Springfield, Va
Language: eng
Number of pages: 86
Subjects: Silicon
Notes: Work performed under contract NAS 7-100-954465

June 1977

Includes bibliographical references