Defects in PN junctions and MOS capacitors observed using thermally stimulated current and capacitance measurements, videotape script
By: Martin G. Buehler.
Series: Semiconductor measurement technology; NBS special publication ; 400-26; NBS special publication ;; 400-26.
Publisher: U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off.
Published: 1976
Place of publication: Washington
Language: eng
Number of pages: 14
Subjects: Semiconductors -- Junctions -- Defects.; Capacitors -- Defects.; Cryostats.; Electric measurements.
Notes: Bibliography: p. 14.