Characterization Methods of Submicron MOSFETs
Edition: 1 edition
Series: The International Series in Engineering and Computer Science
Publisher: Springer
Published: January 31, 1996
Language: eng
Format: Hardcover
Number of pages: 248
ISBN-13: 9780792396956
Subjects: Semi-conductors & super-conductors; Technology & Industrial Arts; Metal Oxide Semiconductors (Mos); Technology; Science/Mathematics; Metal oxide semiconductor fiel; Electronics - Circuits - General; Electronics - Transistors; Engineering - Electrical & Electronic; Technology / Electronics / Circuits / General; Electronics - Semiconductors; Electronic circuit design; Mathematical Models; Metal oxide semiconductor field-effect transistors
First sentence: The Metal-Oxide-Semiconductor field effect transistor (MOSFET) is one of the key devices for the fabrication of very (or ultra) large scale integrated circuits in modern microelectronics.
Table of contents: title: Preface; title: Static Measurements and Parameter Extraction; title: Small Signal Characterization of VLSI MOSFETs; title: Charge Pumping; title: Deep Level Transient Spectroscopy; title: Individual Interface Traps and Telegraph Noise; title: Characterization of SOI MOSFETs; title: Modern Analog IC Characterization Techniques; title: Index