Noise properties of InGaAs/InAlAs multiquantum-well heterostructure p-i-n photodiodes
By: by Young-June Yu
Published: 1989
Language: eng
Number of pages: 203
Subjects: Charge transfer; Noise; Semiconductor Diodes; Indium aluminum arsenide; Measurement; Indium gallium arsenide; Avalanche Diodes
Notes: Typescript.

Vita.

Thesis (Ph. D.)--University of Florida, 1989.

Includes bibliographical references (leaves 198-202)