InGaAs-InAIAs N-P-N double heterojunction bipolar transistors grown by molecular beam epitaxy
By: Pui Leng Lam ; supervised by M. Missous.
Contributors: Missous, M.; Electrical Engineering and Electronics.
Publisher: UMIST
Published: 1995
Place of publication: Manchester
Language: eng
Notes: Thesis number: 12965.

MSc.