Grid adaption for the stationary two-dimensional drift diffusion model in semiconductor device simulation
By: Bernhard Schmithüsen
Edition: 1st ed.
Series: Series in microelectronics -- v. 126
Publisher: Hartung-Gorre
Published: 2002
Place of publication: Konstanz
Language: ger
Number of pages: 160
Subjects: Semiconductors; Computer simulation; Mathematical models; Numerical grid generation (Numerical analysis)
Notes: Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 14449.

Includes bibliographical references (p. 155-160).