Growth processes and surface phase equilibria in molecular beam epitaxy
By: Nikolai N. Ledentsov.
Series: Springer tracts in modern physics,; v. 156; Springer tracts in modern physics ;; 156.
Publisher: Springer
Published: 1999
Place of publication: Berlin; New York
Language: eng
Number of pages: 84
Subjects: Molecular beam epitaxy; Crystal growth; Semiconductor doping
Description: The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Notes: Includes bibliographical references and index.