Properties of strained and relaxed silicon germanium
By: edited by Erich Kasper.
Contributors: Kasper, E.; Institution of Electrical Engineers.
Series: EMIS datareviews series -- no. 12
Publisher: INSPEC
Published: 1995
Place of publication: London
Language: eng
Number of pages: 232
Subjects: Germanium alloys -- Structure.; Silicon alloys -- Structure.; Semiconductors.; Heterostructures.; Superlattices as materials.
Notes: On title page: IEE.

Includes bibliographies and index.