Defects in silicon induced by high temperature treatment and their influence on MOS-devices
Subtitle: a thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences
By: presented by Michael Dammann.
Publisher: Physical Electronics Laboratory, Swiss Federal Institute of Technology
Published: 1994
Place of publication: Zurich
Language: eng
Number of pages: 95
Subjects: Metal oxide semiconductors -- Defects.; Silicon crystals -- Defects.; Silicon -- Effect of temperature on.; Semiconductor switches -- Defects.
Notes: Includes bibliographical references (p. 85-91).
Thesis (doctorate)--Swiss Federal Institute of Technology Zurich.
"DISS. ETH Nr. 10694."