Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory
Subtitle: materialy 2-go vserossiĭskogo soveshchanii︠a︡, 2 ii︠u︡nii︠a︡ 1998 g., Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet = Gallium nitride, indium nitride, aluminum nitride--structures and devices : technical digest : the 2nd Russian Workshop, June 2, 1998, St.-Petersburg State Technical University
Contributors: Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet; Rossiĭskiĭ fond fundamentalʹnykh issledovaniĭ
Publisher: Sankt-Peterburgskiĭ gos. tekhn. universitet
Published: 1998
Place of publication: Sankt-Peterburg
Language: rus
Number of pages: 87
Subjects: Semiconductor Diodes; Materials; Aluminum nitride; Gallium nitride; Indium nitride
Other titles: Gallium nitride, indium nitride, aluminum nitride--struktury i pribory
Notes: "Pri finansovoĭ podderzhke Rossiĭskogo fonda fundamentalʹnykh issledovaniĭ, Sankt-Peterburgskogo t︠s︡entra issledovanii︠a︡ rosta kristallov = Sponsored by Russian Foundation for Basic Research, St. Petersburg Crystal Growth Research Center."

Includes bibliographical references and index.