Neutron and gamma irradiation effects on power semiconductor switches
By: G.E. Schwarze and A.J. Frasca ; prepared for the 25th Intersociety Energy Conversion Engineering Conference, cosponsored by the AIChE, ANS, SAE, ACS, AIAA, ASME, and IEEE, Reno, Nevada, August 12-17,1990.
Contributors: Frasca, A. J.; United States. National Aeronautics and Space Administration.
Series: NASA technical memorandum -- 103200.
Publisher: NASA; For sale by the National Technical Information Service
Published: 1990
Place of publication: [Washington, D.C.]; [Springfield, Va
Language: eng
Format: Microform
Subjects: Semiconductor switches -- Materials -- Effect of radiation on.; Bipolar transistors.; Field effect transistors.; Gamma rays.; Irradiation.; Junction transistors.; Metal oxide semiconductors.; Neutron irradiation.; Radiation dosage.; Radiation shielding.; Radiation tolerance.; Semiconductors (Materials); Switches.
Notes: Cover title.

Shipping list no.: 90-1086-M.

"E-5598"--P. [1].

Includes bibliographical references (p. 5-6).

Also available via Internet from the NASA Technical Report Server web site. Address as of 4/7/05: http://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19900015962%5F1990015962.pdf; current access available via PURL.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1990]. 1 microfiche : negative.

590-13-31.