Cryogenic operation of silicon power devices
By: Ranbir Singh, B. Jayant Baliga.
Contributors: Baliga, B. Jayant, 1948-
Series: Kluwer international series in engineering and computer science.; Power electronics and power systems; Kluwer international series in engineering and computer science.
Publisher: Kluwer Academic Publishers
Published: 1998
Place of publication: Boston
Language: eng
Number of pages: 148
Subjects: Power transistors -- Materials; Cryoelectronics; Silicon -- Effect of tempreature on
Description: This is the first comprehensive resource of power device electrical characteristics in a cryogenic environment. Using theoretical and experimental knowledge from the literature, temperature dependence of fundamental silicon material parameters like intrinsic carrier concentration, carrier mobilities, lifetimes and bandgap narrowing was identified. The temperature dependent model of avalanche breakdown was developed using experimental data on numerous devices.

A wide range of power devices, each with its own unique features, was chosen for theoretical and experimental analysis. Using these analyses, Schottky diodes, power Mosfets, power BJTs, and power JEETs were optimized in the 300-77K temperature range.
Notes: Includes bibliographical references and index.