Defect-band emission photoluminescence imaging on multi-crystalline Si solar cells
Subtitle: preprint
By: Fei Yan ... [et al.].
Contributors: National Renewable Energy Laboratory (U.S.); Colorado State University; Calisolar; IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
Series: NREL/CP -- 5200-50725; Conference paper (National Renewable Energy Laboratory (U.S.)) -- NREL/CP-5200-50725.
Publisher: National Renewable Energy Laboratory
Published: 2011
Place of publication: Golden, CO]
Language: eng
Format: [electronic resource] :
Subjects: Photovoltaic cells; Research; Silicon solar cells; Design and construction; Photoluminescence
Description: Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.
Notes: Title from title screen (viewed August 8, 2011).

"July 2011."

"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."

Includes bibliographical references (p. 4).

DE-AC36-08GO28308

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