Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy
By: edited by John C. Bean, Leo J. Schowalter ; assistant editors, Hiroshi Ishiwara, Erich Kasper, Evan H.C. Parker.
Contributors: Bean, John C. 1950-; Schowalter, Leo J.; Electrochemical Society. Electronics Division.; Electrochemical Society. Dielectrics and Insulation Division.
Series: Proceedings / Electrochemical Society ;; v. 88-8; Proceedings (Electrochemical Society) ;; v. 88-8.
Publisher: Electrochemical Society
Published: 1988
Place of publication: Pennington, NJ (10 S. Main St., Pennington 08534-2896)
Language: eng
Number of pages: 619
Subjects: Molecular beam epitaxy -- Congresses.; Silicon -- Congresses.
Other titles: Silicon molecular beam epitaxy II.; Silicon molecular beam epitaxy 2.
Notes: Includes bibliographies and index.
On spine: Silicon molecular beam epitaxy II.
Symposium held on Oct. 20-23, 1987 in Honolulu Hawaii and sponsored by the Electronics and the Dielectrics and Insulation Divisions of the Electrochemical Society.