Bardzo cienki tlenek bramkowy w tranzystorze MOS--konsekwencje dla działania i modelowania
By: Bogdan Majkusiak.
Series: Prace naukowe.; z. 97
Publisher: Wydawnictwa Politechniki Warszawskiej
Published: 1991
Place of publication: Warszawa
Language: pol
Number of pages: 117
Subjects: Metal oxide semiconductors.
Other titles: Sverkhtonkiĭ podzatvornyĭ okisel v tranzistore MOP--posledstvii͡a︡ dli͡a︡ raboty i modelirovanii͡a︡.; Very thin gate-oxide in an MOS transistor--consequences in action and modelling.
Notes: Includes bibliographical references (p. 103-113).
Cover title.
Titles on p. [2] of cover: Sverkhtonkiĭ podzatvornyĭ okisel v tranzistore MOP--posledstvii͡a︡ dli͡a︡ raboty i modelirovanii͡a︡; Very thin gate-oxide in a[n] MOS transistor--consequences in action and modelling.
Summary in English and Russian.