Electron irradiation of n channel silicon on sapphire Insulated Gate Field Effect Transistors (IGFET)
Published: 1985
Language: eng
Number of pages: 110
Subjects: Physics
Notes: Available from National Technical Information Service, Springfield, Va.

ADA164520.

Thesis (M.S.in Phys.) Naval Postgraduate School, 1985.

Includes bibliographical references.

c.1 - 216911, c.2 - 216912