Physical InP-based HBT models for ultimate digital circuit optimization
By: Jose Miguel Ruiz Palmero.
Edition: 1st ed.
Series: Series in microelectronics -- v. 178
Publisher: Hartung-Gorre
Published: 2006
Place of publication: Konstanz
Language: eng
Number of pages: 279
Subjects: Bipolar transistors -- Design and construction; Indium phosphide; Digital electronics -- Design and construction
Other titles: Physical InP-based heterojunction bipolar transistor models for ultimate digital circuit optimization
Notes: "Reprint of Diss. ETH No. 16859"--T.p. verso.

Summaries in German, Portuguese, and Spanish.

"Double heterojunction bipolar transistors (DHBTs)"--P. 5.

Includes bibliographical references (p. 253-270).