Simulation of double barrier resonant tunneling diodes
By:  Roy M. Porter
Publisher: Naval Postgraduate School; Available from National Technical Information Service
Published: 1996
Place of publication: Monterey, Calif; Springfield, Va
Language: eng
Number of pages: 35
Description: The double barrier resonant tunneling diode (DBRTD) is one of several devices currently being considered by the semiconductor industry as a replacement for conventional very large scale integrated (VLSI) circuit technology when the latter reaches its currently perceived scaling limits. The DBRTD was one of the first and remains one of the most promising devices to exhibit a room temperature negative differential resistance (NDR); this non-linear device characteristic has innovative circuit applications that will enable further downsizing. Due to the expense of fabricating such devices, however, it is necessary to extensively model them prior to fabrication and testing. Two techniques for modeling these devices are discussed, the Thomas-Fermi and Poisson-Schroedinger theories. The two techniques are then compared using a model currently under development by Texas Instruments, Incorporated.
Notes: Thesis advisor(s): James Luscombe, David Cleary.

"June 1996."

Thesis (M.S. in Applied Physics) Naval Postgraduate School, June 1996.

Includes bibliographical references.

Approved for public release; distribution unlimited.

Also available online.

Mode of access: World Wide Web.

System requirements: Adobe Acrobat Reader.

US Navy (USN) author.

dk/dk cc:9996 12/17/96