Raman measurements of dye-laser-annealed, ion implanted GaAs
Publisher: Kansas State University
Published: 1986
Language: eng
Number of pages: 82
Subjects: Raman spectroscopy; Annealing of crystals; Gallium arsenide semiconductors; Dye lasers; Ion implantation
Description: This volume was digitized and made accessible online due to deterioration of the original print copy.