Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD
By: Irving Weinberg, Clifford K. Swartz, and Russell E. Hart, Jr. ; prepared for the 3rd International Photovoltaic Science and Engineering Conference sponsored by the Japan Society of Applied Physics, Tokyo, Japan, November 3-6, 1987.
Contributors: Swartz, Clifford K.; Hart, Russell E.; United States. National Aeronautics and Space Administration.
Series: NASA technical memorandum -- 100199.
Publisher: National Aeronautics and Space Administration; National Technical Information Service, distributor
Published: 1987
Place of publication: [Washington, D.C.]; [Springfield, Va
Language: eng
Format: Microform
Subjects: Electron beams.; Gallium arsenides.; Irradiation.; Protons.; Radiation damage.; Solar cells.
Notes: Cover title.

Distributed to depository libraries in microfiche.

Includes bibliographical references (p. 3-4).

Microfiche. [Washington, D.C.? : National Aeronautics and Space Administration, 1987] 1 microfiche : negative.