Back-etched super junction LDMOST on SOI.
Published: 2004
Language: eng
Number of pages: 70
Description: The electrical characteristics of a CMOS compatible BLDMOST on a 0.8 mum SOI film were investigated. The device with 15.5 mum of SJ length exhibits breakdown voltage of 317 V, specific on-resistance of 50 mOcm 2 and charge on-resistance product of 3.84 OnC. An optimized BLDMOST, on 4 mum SOI film, with the same SJ drift region exhibits break-down voltage of 328 V, specific on-resistance of 8.6 mOcm 2 and charge on-resistance product of 0.73OnC. This latter device breaks the on-resistance-breakdown voltage silicon limit.To verify the concept and the suppression of the substrate depletion effect, super-junction diodes on a 0.8 mum SOI film were successfully implemented in a SOI CMOS compatible process.This thesis deals with the design and implementation of high voltage SJLDMOSTs for future generations of power IC applications. Conventional SJLDMOSTs fabricated on a semiconductor substrate suffer from low breakdown voltage due to substrate-depletion effects. In this thesis, a back etched SJLDMOST (BLDMOST) on SOI structure is proposed to overcome this problem by eliminating the silicon substrate under the device.
Notes: Adviser: C. A. T. Salama.

Thesis (M.A.Sc.)--University of Toronto, 2004.

Electronic version licensed for access by U. of T. users.

Source: Masters Abstracts International, Volume: 42-06, page: 2290.

MICR copy on microfiche (1 microfiche).