Giant Magneto-Resistance Devices
By: by Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata
Contributors: Sakakima, Hirosi; Inomata, Koichiro
Series: Springer Series in Surface Sciences -- 40; Springer Series in Surface Sciences -- 40
Publisher: Springer Berlin Heidelberg
Published: 2002
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 179
ISBN-13: 9783642075261; 9783662047774
Subjects: Magnetism; Physics; Nanotechnology
Description: This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.
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Table of contents: title: 1. Introduction; title: 2. Free electron model of GMR; title: 3. GMR devices of metal-multilayers; title: 4. Tunnel-type GMR (TMR) devices; title: 5. Magnetic random access memory (MRAM); title: 6. Prospects of GMR devices.