Characterization of the linear and nonlinear absorption dynamics of aluminum gallium indium arsenide strained-layer multiple-quantum-well semiconductor optical amplifiers.
Published: 2004
Language: eng
Number of pages: 165
Description: This thesis reports on the experimental characterization of novel AlGaInAs strained-layer multiple-quantum-well (SLMQW) semiconductor optical amplifiers (SOAs), for application in ultrafast semiconductor all-optical switching devices. Facilities constructed for performing pump-probe characterization of the temporal dynamics of active semiconductor waveguide devices, which use a picosecond-pulse Ti:sapphire pumped optical parametric oscillator, are demonstrated. Characterization of two important properties of the SLMQW SOAs is then reported: the ultrafast absorption/gain dynamics, and two-photon absorption (TPA) coefficient. The ultrafast dynamics are found to match with expected results from the literature, exhibiting free carrier step responses as well as two-photon absorption and carrier heating dynamics. A free carrier recovery time constant of &sim;132 ps is measured, and a dynamic with a time constant of 3.7 ps attributed to carrier heating. The TPA coefficient alpha 2 is found to be 260--415 cm/GW over the 1500--600 nm telecommunications wavelength range. The relatively long carrier decay lifetimes and high TPA of these SOAs indicate they do not represent a significant improvement for all-optical switching, leaving room for additional work to improve SOA designs.
Notes: Advisers: J. S. Aitchison; P. W. E. Smith.

Thesis (M.A.Sc.)--University of Toronto, 2004.

Electronic version licensed for access by U. of T. users.

Source: Masters Abstracts International, Volume: 42-06, page: 2308.

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