C,H,N and O in Si and characterization and simulation of materials and processes
Subtitle: proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995
By: edited by A. Borghesi ... [et al.].
Contributors: Borghesi, A.; Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes (1995 : Strasbourg, France)
Series: European Materials Research Society symposia proceedings ;; 56
Publisher: Elsevier
Published: 1996
Place of publication: Amsterdam; New York
Language: eng
Number of pages: 256
Subjects: Semiconductors -- Congresses.; Silicon -- Congresses.; Semiconductors -- Defects -- Congresses.
Notes: Includes bibliographical references and indexes.
"Reprinted from Materials science and engineering volumes B36 (1-3) ... and B37 (1-3)"--T.p. verso.