Loop nucleation and stress effects in ion-implanted silicon
Publisher: Gainesville, FL
Published: 2002
Language: eng
Number of pages: 162
Subjects: Ion implantation; Semiconductors--Defects; Semiconductor doping.
Description: <a href="http://uf.catalog.fcla.edu/uf.jsp?st=UF002850921&ix=pm&I=0&V=D&pm=1" rel="nofollow">http://uf.catalog.fcla.edu/uf.jsp?st=UF002850921&ix=pm&I=0&V=D&pm=1</a>