Growth of gallium arsenide epitaxial layers for Gunn diodes.
Contributors: Danmarks Tekniske Hoejskole. Laboratoriet for Elektromagnetisk Feltteori.; Technical University of Denmark. Electromagnetics Institute.
Series: D 269; 13/PG/CM
Publisher: Danmarks Tekniske Hoejskole Laboratoriet for Elektromagnetisk Feltteori
Published: 1975
Place of publication: Lyngby
Language: eng
Number of pages: 22
Notes: Paa omslaget: Electromagnetics Institute, Technical University Denmark, Lyngby.