Ohmic contacts, irradiation effects, and thin film growth of GaAs and Al [subscript 1-X] Ga [subscript X] As
Subtitle: final technical report
By: submitted by: Paul H. Holloway.
Contributors: University of Florida. Dept. of Materials Science and Engineering.; Langley Research Center.
Series: NASA-CR -- 173257.; NASA contractor report -- NASA CR-173257.
Publisher: University of Florida, Dept. of Materials Science and Engineering; NASA Langley Research Center
Published: 1984
Place of publication: Gainesville, Fla; Hampton, Va
Language: eng
Format: Microform
Subjects: Ohmic contacts.; Thin films.; Crystal growth.; Electric contacts.; Electrical properties.; Gallium arsenides.; Radiation effects.; Thin films.
Notes: Microfiche. [Washington, D.C. : National Aeronautics and Space Administration], 1984. 1 microfiche.