Applications of atomic layer deposition in nanoelectronic systems
By: by Damon Brooks Farmer
Series: Collections of the Harvard University Archives
Published: 2007
Language: eng
Number of pages: 145
Description: Atomic layer deposition (ALD) is a promising deposition technique for nanoelectronic applications. Reasons for this include low temperature processing, self-limiting growth, and sub-nanometer thickness precision. ALD can be used as a complementary technique to coat preexisting nanostructures, or as a technique to directly fabricate nanostructures. In this dissertation, applications of ALD in two nanoelectronic systems are investigated: carbon nanotubes and nanocrystals. Conformal ALD on as-grown suspended single-walled carbon nanotubes (SWNTs) is not possible due to the inertness of ALD precursor molecules to the SWNT surface. A covalent functionalization technique is presented that makes SWNTs reactive with ALD precursor molecules. Precursor reactivity with the functionalized nanotubes is shown to be due to -NO 2 functional groups attached to the nanotube sidewalls. The effect of this functionalization technique on nanotube conductance is shown to be reversible, and doping caused by the deposited oxides is discussed.

To improve upon the covalent functionalization method, alternating exposures of nitrogen dioxide gas and trimethylaluminum vapor are shown to functionalize the surfaces of single-walled carbon nanotubes with a self-limited functional layer. These functionalized nanotubes are shown to be susceptible to ALD of continuous, radially isotropic material. This allows for the creation of coaxial nanotube structures of multiple materials with precisely controlled diameters. This functionalization technique involves only weak physical bonding, avoiding covalent modification, which should preserve the unique optical, electrical, and mechanical properties of the nanotubes. As a fabrication technique, ALD is used to fabricate arrays of Ru nanocrystals 1-4 nm in diameter. The nanocrystal density is found to depend sensitively on the nucleating surface. A maximum density of 7 x 10 12 cm -2 -8 x 10 12 cm -2 is achieved on Al 2 O 3 . Incorporation of these nanocrystals in floating gate memory cells results in C-V curves that exhibit large, counterclockwise hysteresis. Leakage current analysis reveals charging phenomena, Frenkel-Poole emission, and space-charge-limited conduction. This analysis allows for the determination of nanocrystal size and connectivity. Charge storage converges to approximately 50% of the maximum value after two days. The corresponding loss mechanisms are discussed.
Notes: "June 2007."

Thesis (Ph.D., School of Engineering and Applied Sciences (Applied Physics))--Harvard University, 2007.

Includes bibliographical references.