Temperature-dependent photoluminescence imaging and characterization of a multi-crystalline silicon solar cell defect area
Subtitle: preprint
By: Steve Johnston ... [et al.].
Contributors: National Renewable Energy Laboratory (U.S.); IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
Series: NREL/CP -- 5200-50706; Conference paper (National Renewable Energy Laboratory (U.S.)) -- NREL/CP-5200-50706.
Publisher: National Renewable Energy Laboratory
Published: 2011
Place of publication: Golden, CO]
Language: eng
Format: [electronic resource] :
Subjects: Photoluminescence; Photovoltaic cells; Research; Solar cells; Testing; Defects
Description: Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ~85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodo-luminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging.
Notes: Title from title screen (viewed August 1, 2011).

"July 2011."

"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."

Includes bibliographical references (p. 5-6).

DE-AC36-08GO28308

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