Characterization of electronic properties of materials for nano-electronics
By: by Ian Jeremy Gelfand
Published: 2009
Language: eng
Number of pages: 160
Description: Measurements are described on Gallium Arsenide (GaAs), Indium Arsenide (InAs), and Silicon Germanium (SiGe) two dimensional electron gasses (2DEGs) and quantum dots, with the goal of using these materials to form solid state quantum bits. In the GaAs system, quantum dots are used to measure the Kondo effect and its response to magnetic fields. In the InAs system, electron concentration is modulated in the quantum hall regime with the help of an atomic layer deposition (ALD) dielectric film. In SiGe, quantum dots are fabricated using a shallow etch technique. Coulomb blockade diamonds are seen in these devices.
Notes: "June 2009."

Thesis (Ph.D., School of Engineering and Applied Sciences (Applied Physics))--Harvard University, 2009.

Includes bibliographical references.