Transport, correlation, and structural defects
By: edited by Hellmut Fritzsche.
Contributors: Fritzsche, Hellmut.
Series: Advances in disordered semiconductors ;; v. 3
Publisher: World Scientific
Published: 1990
Place of publication: Singapore; Teaneck, N.J
Language: eng
Number of pages: 305
Subjects: Semiconductors -- Defects.; Order-disorder models.
Notes: Includes bibliographical references and indexes.