Advances in silicon carbide processing and applications
By: Stephen E. Saddow, Anant Agarwal, editors
Contributors: Saddow, Stephen E; Agarwal, Anant
Publisher: Artech House; Artech House Publishers
Published: 2004
Place of publication: Boston
Language: eng
Number of pages: 212
Subjects: Silicon carbide; Semiconductors
Description: "Advances In Silicon Carbide Processing and Applications provides detailed coverage of the latest advances in SiC (silicon carbide) technology from the leading experts in the field. The book serves as the professional's single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices." "Key issues in selective doping of SiC via ion implantation are covered with a special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an assessment of today's SiC technology and explains how SiC can be adopted in developing tomorrow's applications."--BOOK JACKET.
Notes: Includes bibliographical references and index