Extension of bandgap broadening model for quantum mechanical correction in sub-quarter micron MOS devices to accumulation layer
By: Paul Vande Voorde ... [et al.]
Contributors: Vande Voorde, Paul.; Hewlett-Packard Laboratories.
Series: HP Laboratories technical report -- HPL-96-42.
Publisher: Hewlett-Packard Laboratories, Technical Publications Department
Published: 1996
Place of publication: Palo Alto, CA
Language: eng
Subjects: Metal oxide semiconductors
Notes: Cover title.

Includes bibliographical references (p. 2).