Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices
By: by Donald W. Schulte.
Published: 1995
Language: eng
Number of pages: 114
Subjects: Epitaxy.; Gallium arsenide semiconductors.; Modulation-doped field-effect transistors.
Notes: Typescript (photocopy)

Thesis (Ph.D.)--Oregon State University, 1996.

Includes bibliographical references (leaves 110-114).