Device design and process window analysis of a deep submicron CMOS VLSI technology
By: Philip E. Madrid, Shih Wei Sun.
Contributors: Sun, Shih Wei, 1957-
Edition: Motorola University Press partnership ed.
Publisher: Addison-Wesley
Published: 1992
Place of publication: Reading, Mass
Language: eng
Number of pages: 26
Subjects: Metal oxide semiconductor field-effect transistors -- Design and construction.; Metal oxide semiconductors, Complementary -- Design and construction.; Integrated circuits -- Very large scale integration -- Design and construction.
Notes: Includes bibliographical references (p. 22-23) and index.