Drain current transient characterization of P-channel GaAs MESFET
By: by Lan L. Peng.
Published: 1990
Language: eng
Number of pages: 60
Subjects: Metal semiconductor field-effect transistors.; Gallium arsenide semiconductors.; Transients (Electricity)
Notes: Typescript (photocopy)

Thesis (M.S.)--Oregon State University, 1990.

Includes bibliographical references (leaves 58-60)