InGaAs PV device development for TPV power systems
By: David M. Wilt ... [et al.].
Contributors: Wilt, David M.; United States. National Aeronautics and Space Administration.
Series: NASA technical memorandum -- 106718.
Publisher: National Aeronautics and Space Administration; National Technical Information Service, distributor
Published: 1994
Place of publication: [Washington, DC]; [Springfield, Va
Language: eng
Format: Microform
Subjects: Black body radiation.; Crystal lattices.; Energy conversion efficiency.; Indium Gallium arsenides.; Indium phosphides.; Lattice parameters.; Photothermal conversion.; Photovoltaic cells.; Semiconductor devices.; Semiconductors (Materials); Thermal energy.; Vapor phase epitaxy.
Notes: Distributed to depository libraries in microfiche.

Shipping list no.: 95-0056-M.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1994] 1 microfiche.