Gas Source Molecular Beam Epitaxy
Subtitle: Growth and Properties of Phosphorus Containing III-V Heterostructures
By: by Morton B. Panish, Henryk Temkin
Contributors: Temkin, Henryk
Series: Springer Series in Materials Science -- 26; Springer Series in Materials Science -- 26
Publisher: Springer Berlin Heidelberg
Published: 1993
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] :
Number of pages: 428
ISBN-13: 9783642781292; 9783642781278
Subjects: Electronics; Physics; Surfaces (Physics)
Description: The book presents the first unified treatment of Hybride source MBE and Metaloraganic MBE that includes: detailed descriptions of the beam epitaxy apparatus and its use, simplified thermodynamic and chemical treatments of both reactions in the beam source and the crystal growth, and details of doping behavior, particularly redistribution during growth, and the achievement of very high doping levels. These are essential for design and growth of structures with complex doping profiles. Since Metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. The chapters on the properties of the heterostructures and devices illustrate in detail the use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescene methods, and the use of active devices for materials evaluation. In addition, the latest information on state-of-the-art InP/GaInAs(p) optoelectronic devices and bipolar transistors grown by MBE methods is presented. As far as we are aware, this information has not previously been presented in a unified format. We expect that this book will be particulary useful to workers in the field, and their management, that are interested in evaluating these MBE methods for reserach and for device development, and to students from the variety of fields that contribute to the growth of solid state electronics. For the latter it presents, in very clear form, introductions to a variety of topics. We have emphasized the InP/GaInAs(P) system because the need for precision structures in this system was the primary driving force for the development of alternate MBE methods, and because it is one of rising importance, vital to optical communications systems, of great potential for future ultra-highspeed electronics, and with other potential appl.s.a. int.opt.ele.
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