Ultra-Fast Silicon Bipolar Technology
By: edited by Ludwig Treitinger, Mitiko Miura-Mattausch
Contributors: Miura-Mattausch, Mitiko
Series: Springer Series in Electronics and Photonics -- 27; Springer series in electronics and photonics -- 27.
Publisher: Springer Berlin Heidelberg
Published: 1988
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 167
ISBN-13: 9783642743627; 9783642743603
Subjects: Electronics; Surfaces (Physics); Optical materials
Description: This book presents an overview of important current and (near) future developments of high-performance bipolar devices and the corresponding technologies. It is written by foremost experts who are themselves engaged in the developments within the leading companies, thus giving the most up-to-date results. The reviews presented here show clearly that there remains a large potential for further progress in this field. This progress is characterized by the demands for higher speed and lower power consumption for single-chip systems. It is also apparent that a large part of this potential can be realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication. The book is written in a style that should be understandable not only to experts but also to newcomers to the bipolar field.
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Table of contents: title: History, Present Trends, and Scaling of Silicon Bipolar Technology; title: Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors; title: Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors; title: Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects; title: A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI; title: Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar Transistors; title: Trends in Heterojunction Silicon Bipolar Transistors; title: Molecular Beam Epitaxy of Silicon-Based Bipolar Structures; title: Subject Index.