Monolithic CMOS photoreceivers for optical storage.
Published: 2004
Language: eng
Number of pages: 96
Description: Key trends in optical storage include increased integration, bandwidths beyond 120 MHz for higher data rates, and progressively shorter wavelengths from 780nm and 650nm to 400nm. In this thesis, we investigate monolithic photoreceivers in a standard 0.35mum CMOS process. By adopting a spatially modulated photodiode structure to cancel diffusion carriers, the bandwidth of the photoreceivers was measured to be 375 MHz at 780nm wavelength, limited by the speed of the transimpedance amplifier and not the photodiode. Previous implementations of spatially modulated photodetectors reported low efficiency. The responsivity of the proposed photodiode is improved by 60% using a 4:1 ratio detector instead of the typical 1:1 ratio. A number of transimpedance amplifiers with gains of 11 kO 33 kO, and 44 kO were implemented to characterize the photodiodes. A 68 kO 170 MHz transimpedance amplifier suitable for high speed optical storage was also implemented and the experimental results are presented.
Notes: Adviser:  Khoman Phang.

Thesis (M.A.Sc.)--University of Toronto, 2004.

Electronic version licensed for access by U. of T. users.

Source: Masters Abstracts International, Volume: 42-06, page: 2283.

MICR copy on microfiche (2 microfiches).