Differential capacitance-voltage profiling of schottky barrier diodes for measuring implanted depth distributions in silicon
By: R.G. Wilson and D.M. Jamba.
Contributors: Jamba, Douglas M.; United States. National Bureau of Standards.; United States. Advanced Research Projects Agency.; Hughes Aircraft Company. Research Laboratories.
Series: NBS special publication ;; 400-71; Semiconductor measurement technology
Publisher: U.S. Dept. of Commerce, National Bureau of Standards; National Technical Information Service, distributor
Published: 1982
Place of publication: Washington, D.C; [Springfield, VA
Language: eng
Number of pages: 52
Subjects: Semiconductors -- Testing.; Diodes, Schottky=barrier.
Notes: Includes bibliographical references.
"This work was sponsored by Defense Advanced Research Projects Agency."
"Hughes Research Laboratories."
"Issued February 1982."
Item 247 (microfiche)