Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique
By: Don J. Roth ... [et al.].
Contributors: Roth, Don J.; United States. National Aeronautics and Space Administration. Scientific and Technical Information Program.
Series: NASA technical paper -- 3377.; NASA technical paper -- 3377.
Publisher: National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program; National Technical Information Service, distributor]
Published: 1993
Place of publication: [Washington, DC]; [Springfield, Va
Language: eng
Format: Microform
Subjects: Silicon nitride.
Notes: Distributed to depository libraries in microfiche.

Shipping list no.: 94-0014-M.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1993] 1 microfiche.