Solid State Physics
Subtitle: Advances in Research and ApplicationsVolume 46
Contributors: Spaepen, Frans
Publisher: Elsevier
Published: 1997
Place of publication: San Diego
Language: eng
Format: [electronic resource] :
Number of pages: 439
ISBN-13: 9780080865157
Subjects: Solid state physics; Solid state physics -- Periodicals; Solid state physics -- Problems, exercises; Condensed matter; Solid state physics -- Research
Description: Solid State Physics, Volume 51 continues the serial's tradition of excellence by focusing on the optical and electronic properties and applications of semiconductors. All of the topics in this volume are at the cutting-edge of research in the semiconductor field and will be of great interest to the scientific community.
Notes: Description based upon print version of record.
Table of contents: title: Front Cover; Solid State Physics, Volume 51; Copyright Page; Contents; Contributors; Preface; Chapter 1. Image States on Single-Crystal Metal Surfaces; I. Introduction; II. Our Theoretical Understanding of Image States; III. Experimental Probes of Image-State Properties; IV. Experimental Measurements of the Stationary Properties of Image States on Bare, Single-Crystal Surfaces; V. Measurements of the Dynamic Properties of Image States; VI. Image States on Ferromagnetic Surfaces; VII. Image States and Surface Conditions; VIII. Lateral Quantum Confinement of Surface Electrons; IX. Summary; title: Chapter 2. Good ThermoelectricsI. Introduction; II. Devices; III. Bulk Semiconductors; IV. Review of Materials; V. Narrow-Gap Semiconductors; VI. Metals; VII. Summary; Chapter 3. Theory of Electromigration; I. Introduction; II. Driving Force for Electromigration; III. Theoretical Calculations; IV. Beyond the Adiabatic Picture; V. Conclusions; Chapter 4. Fracture Toughness of Materials: From Atomistics to Continuum Theory; I. Introduction; II. Levels of Description Materials; III. Calculations of Fracture Toughness; IV. Connections Between Different Approaches; V. Key Calculations; title: Chapter 5. Displacement Damage in Irradiated Metals and SemiconductorsI. Introduction; II. Binary Collision and Thermal Spike Models; III. Defect Production near Threshold Energies; IV. Dynamics of Collision Cascades: Beyond BCA Models; V. Ion-Beam Mixing; VI. Defect Production in Cascades; VII. Primary State of Damage; VIII. Effects of Surfaces and Applied Stresses on Cascades; IX. Freely Migrating Defects; X. Conclusions; Author Index; Subject Index