An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits
By: Iwan Schnyder
Edition: 1st ed.
Series: Series in microelectronics -- v. 156
Publisher: Hartung-Gorre Verlag
Published: 2005
Place of publication: Konstanz
Language: eng
Number of pages: 267
Subjects: Bipolar transistors; Design and construction; Indium phosphide
Notes: "Reprint of Diss. ETH No. 16007"--T.p. verso.

"InP DHBTs"--P. 4 of cover.

Includes abstract in German.

Includes bibliographical references (p. 257-264) and index.