Growth and characterization of free-standing gallium nitride substrates by the hydride-metalorganic vapor phase epitaxy technique
Publisher: Gainesville, FL
Published: 2002
Language: eng
Number of pages: 271
Subjects: Gallium nitride; Semiconductor films.
Description: <a href="http://uf.catalog.fcla.edu/uf.jsp?st=UF028834430&ix=pm&I=0&V=D&pm=1" rel="nofollow">http://uf.catalog.fcla.edu/uf.jsp?st=UF028834430&ix=pm&I=0&V=D&pm=1</a>