Operation and modeling of the MOS transistor
By: Yannis Tsividis.
Edition: 2nd ed.
Publisher: WCB/McGraw-Hill
Published: 1999
Place of publication: Boston; London
Language: eng
Number of pages: 620
Subjects: Metal oxide semiconductors -- Mathematical models.; Metal oxide semiconductor field-effect transistors -- Mathematical models.
Notes: Includes bibliographical references and index.