Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication
By: D. R. Myers, Electron Devices Division, Center for Electronics and Electronical Engineering, National Engineering Laboratory, National Bureau of Standards
Contributors: Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division; United States. Division of Electric Energy Systems; United States. National Bureau of Standards
Series: Semiconductor measurement technology; NBS special publication ; 400-60; NBS special publication -- 400-60
Publisher: Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt Print. Off.
Published: 1980
Place of publication: Washington
Language: eng
Number of pages: 29
Subjects: Semiconductor doping; Neutron irradiation; Silicon
Notes: Sponsored by Division of Electric Energy Systems, Department of Energy

Issued May 1980

CODEN : XNBSAV

Includes bibliographical references