Reliability wearout mechanisms in advanced CMOS technologies
By: Alvin W. Strong ... [et al.].
Series: IEEE Press series on microelectronic systems; IEEE Press series on microelectronic systems
Publisher: IEEE Press; Wiley
Published: 2009
Place of publication: Piscataway, NJ; Hoboken, NJ
Language: eng
Number of pages: 624
ISBN-13: 9780471731726; 9780470455265
Subjects: Complementary Metal oxide semiconductors; Reliability; CMOS-Schaltung; Schaltungsentwurf
Notes: Includes bibliographical references and index.
Table of contents: title: Introduction / Alvin W. Strong; title: Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé; title: Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé; title: Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa; title: Hot carriers / Stewart E. Rauch, III; title: Stress-induced voiding / Timothy D. Sullivan; title: Electromigration / Timothy D. Sullivan.