Differential capacitance-voltage profiling of Schottky barrier diodes for measuring implanted depth distributions in silicon
By: R.G. Wilson and D.M. Jamba.
Contributors: Jamba, Douglas M.; Hughes Aircraft Company. Research Laboratories; United States. Advanced Research Projects Agency
Series: Semiconductor measurement technology; NBS special publication -- 400-71
Publisher: U.S. Dept. of Commerce, National Bureau of Standards; For sale by the Supt. of Docs., U.S. G.P.O.
Published: 1982
Place of publication: Washington, D.C
Language: eng
Format: Microform
Number of pages: 52
Subjects: Diodes, Schottky-barrier.; Ion implantation.; Electric measurements.
Notes: "Hughes Research Laboratories."

"This work was sponsored by: Defense Advanced Research Projects Agency."

"Issued February 1982."

Bibliography: p. 48-52.

Microfiche. Springfield, Va. : NTIS, 1982. 1 microfiche : negative ; 11 x 15 cm.