Hot-Carrier Reliability of MOS VLSI Circuits
By: by Yusuf Leblebici, Sung-Mo (Steve) Kang
Contributors: Kang, Sung-Mo (Steve)
Series: The Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing -- 227; Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing -- 227.
Publisher: Springer US
Published: 1993
Place of publication: Boston, MA
Language: eng
Format: [electronic resource] /
Number of pages: 212
ISBN-13: 9781461364290; 9781461532507
Subjects: Systems engineering; Engineering; Computer engineering
Description: This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, the prevalent models for these mechanisms, and simulation methods for estimating hot-carrier effects in the circuit environment. The newly emerging approaches to the VLSI design-for-reliability and rule-based reliability diagnosis are also discussed in detail. Hot-Carrier Reliability of MOS VLSI Circuits is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures and models. VLSI designers will benefit from this book since it offers a comprehensive overview of the interacting mechanisms that influence hot-carrier reliability, and also provides useful guidelines for reliable VLSI design. This volume can be used as an advanced textbook or reference for a graduate-level course on VLSI reliability.
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