Fundamentals of III-V devices
Subtitle: HBTs, MESFETs, and HFETs/HEMTs
By: William Liu.
Publisher: Wiley
Published: 1999
Place of publication: New York
Language: eng
Number of pages: 505
Subjects: Bipolar transistors.; Field-effect transistors.; Metal semiconductor field-effect transistors.; Modulation-doped field-effect transistors.
Other titles: Fundamentals of three-five devices
Description: "With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level.

Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices - heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs).

An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features."--BOOK JACKET.
Notes: Includes bibliographical references and index.
"A Wiley-Interscience publication."