Advanced development of double-injection, deep-impurity semiconductor switches
Subtitle: final technical report for the period June 13, 1985 to December 15, 1987
By: M.H. Hanes.
Contributors: United States. National Aeronautics and Space Administration.
Series: NASA contractor report -- NASA CR-182118.
Publisher: Westinghouse R&D Center; National Aeronautics and Space Administration; For sale by the National Technical Information Service
Published: 1987
Place of publication: Pittsburgh, Penn; [Washington, DC; Springfield, Va
Language: eng
Format: Microform
Subjects: Semiconductor switches.; Silicon.
Other titles: Advanced development of double injection, deep impurity semiconductor switches.
Notes: Distributed to depository libraries in microfiche.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1988] 2 microfiches.