Silicon sheet growth by the inverted Stepanov technique
By: S. Berkman ... [et al.].
Contributors: Kim, K.M.; Berkman, S; United States. Energy Research and Development Administration. Division of Solar Energy
Publisher: Energy Research and Development Administration, Division of Solar Energy; for sale by the National Technical Information Center
Published: 1976
Place of publication: [Washington]; Springfield, Va
Language: eng
Subjects: Silicon.
Notes: "ERDA/JPL/954465-76/1."

"ERDA/JPL/954465-76/2."

"ERDA/JPL/954465-76/3."

"ERDA/JPL/954465-77/1."

"DOE/JPL/954465-2."

Work performed by the Jet Propulsion Laboratory, California Institute of Technology, under NASA contract NAS7-100.

Issued Mar. 1977.

Includes bibliographical references.