Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication
By: D.R. Myers ; sponsored by Division of Electric Energy Systems, Department of Energy.
Series: National Bureau of Standards Special publication ;; 400-60; Semiconductor measurement technology; NBS special publication ;; 400-60.; Semiconductor measurement technology.
Publisher: U.S. Dept. of Commerce, National Bureau of Standards; for sale by the Supt. of Docs., U.S. Govt. Print. Off.
Published: 1980
Place of publication: Washington, D.C
Language: eng
Number of pages: 29
Subjects: Semiconductor doping, Neutron transmutation.; Silicon -- Defects.; Power semiconductors.; Thyristors.
Notes: Includes bibliographical references.
"Issued May 1980."