The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
By: Sheng S. Li.
Contributors: United States. Defense Advanced Research Projects Agency.; National Science Foundation (U.S.)
Series: Semiconductor measurement technology; NBS special publication ; 400-47; NBS special publication ;; 400-47.
Publisher: U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off.
Published: 1979
Place of publication: Washington
Language: eng
Number of pages: 42
Subjects: Holes (Electron deficiencies); Semiconductor doping.; Silicon -- Defects.
Notes: Includes bibliographical references and index.
"This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation."