MOS devices
Subtitle: design and manufacture
By: edited by A.D. Milne.
Contributors: Milne, A. D.
Publisher: Edinburgh University Press
Published: 1982
Place of publication: Edinburgh
Language: eng
Number of pages: 186
Subjects: Metal oxide semiconductors.
Other titles: M.O.S. devices.
Notes: Includes bibliographies and index.
Table of contents: value: Introduction / by A.D. Milne; value: MOS transistor fundamentals / by R.G. Kelly; value: The essentials of MOS production techniques / by P.M. Dryburgh; value: MOS process characterisation / by J. Mavor; value: MOS transistor inverter gates / by J. Mavor; value: Integrated circuit design techniques and technologies / by J. Compton and A.D. Milne; value: Limitations of and improvements to MOS processes / by J. Compton; value: Analogue signal processing with MOS and charge-coupled devices / by P.B. Denyer; value: Material quality, yield and reliability factors / by A.D. Milne and J.M. Robertson; value: Failure diagnosis with the scanning electron microscope / by A.R. Dinnis.