Laser techniques for investigation of defects semiconductors and dielectrics
By: edited by A.A. Manenkov ; translated by Kevin S. Hendzel.
Contributors: Manenkov, A. A.; Hendzel, Kevin S.
Series: Proceedings of the Institute of General Physics, Academy of the Sciences of the USSR,; v. 4; Trudy Instituta obshcheĭ fiziki.; v. 4.
Publisher: Nova Science Publishers
Published: 1988
Place of publication: Commack, N.Y
Language: eng
Number of pages: 204
Subjects: Semiconductors -- Defects.; Dielectrics -- Defects.; Laser beams.
Other titles: Laser methods of defect investigations in semicondutors and dielectrics.
Notes: Includes bibliographies and index.
Translation of: Lazernye metody issledovaniĭ defektov v poluprovodnikakh i diėlektrikakh.
Title on p. facing t.p. in listing of vols. of series: Laser methods of defect investigations in semiconductors and dielectrics.
Table of contents: title: Investigation of impurity centers in semiconductors by IR-laser emission scattering technique / V.P. Kalinushkin; title: Defect formation by intense optical excitation of alkali-halide crystals with mercury-like ions / V.P. Danilov; title: Laser excitation of nonequilibrium carriers in wideband dielectrics / B.G. Gorshkov ... [et al.].