MOSFET Models for VLSI Circuit Simulation
Subtitle: Theory and Practice
By: by Narain Arora
Series: Computational Microelectronics; Computational Microelectronics
Publisher: Springer Vienna
Published: 1993
Place of publication: Vienna
Language: eng
Format: [electronic resource] :
Number of pages: 605
ISBN-13: 9783709192498; 9783709192474
Subjects: Numerical analysis; Engineering mathematics; Computer science; Software engineering; Electronics; Optical materials
Description: The book has 12 chapters. Starting from the overview of various aspects of device modeling for circuit simulators, a brief but complete review of seminconductor device physics and pn junction theory required for understanding MOSFET models is covered. The MOS transistor characteristics as applied to current MOS technologies are then discussed. First, the theory of MOS capacitors that is essential for understanding of MOS transistor models are discussed. This is followed by different types of MOSFET models such as threshold voltage, DC (steady-state), AC, and reliability models and the corresponding model parameter determination. The diode and MOSFET models as implemented in Berkeley SPICE, are also covered. Finally, the statistical variation of model parameters due to process variations are discussed.
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