Density of states in hydrogenated and tritiated amorphous silicon thin films obtained using the constant photocurrent method.
Published: 2004
Language: eng
Number of pages: 102
Description: The constant photocurrent method (CPM) was implemented to determine the density of states in amorphous silicon below the Fermi level. Hydrogenated (a-Si:H) and tritiated (a-Si:H:T) amorphous silicon thin films, grown using the DC saddle-field deposition system, where analyzed with CPM.Tritium incorporated in amorphous silicon samples increases the defect state density over time. The results showed an exponential valence band tail and a peak of doubly occupied dangling bonds (D-) positioned 1.24 eV below the conduction band. The defects in a-Si:H:T were monitored in time showing an increase of defect concentration of about two orders of magnitude. This trend evolved following the theoretical decay of tritium.The a-Si:H samples featured a valence band tail and a peak of singly occupied dangling bonds (D0). A halogen lamp was used to age the samples inducing the Staebler-Wronski effect. Upon illumination the defect density increased by one order of magnitude before saturating.
Notes: Adviser:  S. Zukotynski.

Thesis (M.A.Sc.)--University of Toronto, 2004.

Electronic version licensed for access by U. of T. users.

Source: Masters Abstracts International, Volume: 43-03, page: 0942.

MICR copy on microfiche (2 microfiches).