Junction transport in epitaxial film silicon heterojunction solar cells
Subtitle: preprint
By: David L. Young ... [et al.].
Contributors: National Renewable Energy Laboratory (U.S.); IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
Series: NREL/CP -- 5200-50712; Conference paper (National Renewable Energy Laboratory (U.S.)) -- NREL/CP-5200-50712.
Publisher: National Renewable Energy Laboratory
Published: 2011
Place of publication: Golden, CO]
Language: eng
Format: [electronic resource] :
Subjects: Solar cells; Research; Photovoltaic cells; Epitaxy
Description: We report our progress toward low-temperature hot wire chemical vapor deposition (HWCVD) epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous silicon (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.
Notes: Title from title screen (viewed on September 12, 2011).

"July 2011."

"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."

Includes bibliographical references (p. 4).

DE-AC36-08GO28308

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