MATERIALS RESEARCH FOUNDATIONS
Subtitle: radiation effects in silicon carbide
Series: Materials Research Foundations -- volume 6 (2017); Materials research foundations -- v. 6 (2017)
Publisher: MATERIALS RESEARCH FORUM
Published: 2017
Place of publication: [Place of publication not identified]
Language: eng
ISBN-13: 9781945291111
Subjects: Silicon carbide; Effect of radiation on; SCIENCE; Chemistry; Inorganic
Description: The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed.
Table of contents: title: 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons2.8.1 Introduction; 2.8.2 Generation of primary radiation defects under electron irradiation; 2.8.3 Formation of secondary radiation defects; 2.8.4 Comparison with experiment; Conclusion; References; 3; 3.1 Introduction; 3.2 Intrinsic defects in silicon carbide; 3.2.1 Centers in the lower half of the energy gap; 3.2.2 Defects in the upper half of the energy gap; 3.3 Radiation doping of SiC; 3.3.1 Electrons; 3.3.2 Neutrons.; title: 3.3.3 Alpha; title: particles3.3.4 Protons; 3.3.5 Ion implantation; 3.5 Radiation; title: stimulated photoluminescence in SiC; 3.5.1 "Defect" photoluminescence; 3.5.2 Restorian of SiC characteristics upon annealing; References; 4; 4.1 Change in parameters of SiC devices under irradiation; 4.1.1 Schottky diodes; 4.1.2 PN diodes; 4.1.3 SiC field; title: effect transistors; 4.2 Possible transformation of the SiC polytype under irradiation; 4.2.1 Possible resons for the polytypism of SiC; 4.2.2 Selected experimental results; 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide.; title: 4.3.1 Dependence of the radiation hardness on the functional purpose of a device4.3.2 Effect of temperature on the radiation hardness; 4.4 Conclusion; 4.5 Acknowledgments; References; keywords_editors.