Diffusion length measurements in bulk and epitaxially grown III-V semiconductors using charge collection microscopy
By: R.P. Leon.
Contributors: United States. National Aeronautics and Space Administration.
Series: NASA technical memorandum -- 100128.
Publisher: National Aeronautics and Space Administration; For sale by the National Technical Information Service
Published: 1987
Place of publication: [Washington, DC]; [Springfield, Va
Language: eng
Format: Microform
Subjects: Microelectronics.; Diodes.; Semiconductors.
Notes: Distributed to depository libraries in microfiche.

Microfiche. [Washington, D.C.? : National Aeronautics and Space Administration], 1987. 1 microfiche.