MOSFET theory and design
By: R.M. Warner, Jr., B.L. Grung.
Contributors: Grung, B. L.
Publisher: Oxford University Press
Published: 1999
Place of publication: New York
Language: eng
Number of pages: 256
Subjects: Metal oxide semiconductor field-effect transistors.; Electronic circuit design.
Description: Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of "extra" subject matter.

MOSFET Theory and Design offers a "hands on" approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography.
Notes: Includes bibliographical references (p. 217-222) and indexes.