Si front-end processing
Subtitle: physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
By: editors, Hans-Joachim L. Gossmann ... [et al.].
Contributors: Gossmann, Hans-Joachim L.
Series: Materials Research Society symposium proceedings ;; v. 568; Materials Research Society symposia proceedings ;; v. 568.
Publisher: Materials Research Society
Published: 1999
Place of publication: Warrendale, Penn
Language: eng
Number of pages: 298
Subjects: Semiconductors -- Design and construction -- Congresses.; Semiconductor doping -- Congresses.; Silicon -- Congresses.; Semiconductors -- Defects -- Congresses.
Genres: Congresses.
Notes: Includes bibliographical references and index.