An experimental approach for studying creep behavior of model planar interfaces
Contributors: Naval Postgraduate School (U.S.)
Publisher: Naval Postgraduate School; Available from National Technical Information Service
Published: 2000
Place of publication: Monterey, Calif; Springfield, Va
Language: eng
Number of pages: 43
Description: An apparatus for measuring the steady state creep behavior of interfaces in aluminum-silicon-aluminum multilayered specimens has been assembled. In the experiment scheme, a double-shear specimen geometry was used to load the interfaces in a state of nominally constant shear. The deformation kinetics for interfacial sliding during constant shear stress creep experiments were measured for various applied interfacial shear Stress levels and temperatures. Interfacial shear strain rates were measured using displacement and capacitance gauges. The planar interfaces between the aluminum and silicon layers were prepared by diffusion bonding. Preliminary results indicate that that interfacial sliding occurs via time-dependent relaxation mechanisms and that there is a threshold stress for interfacial sliding, in agreement with previous work on lead-Quartz and lead- nickel interfaces.
Notes: Thesis advisor(s): Dutta, Indranath.

"June 2000."

Thesis (M.S. in Mechanical Engineering and Mechanical Engineer) Naval Postgraduate School, June 2000.

Includes bibliographical references (p. 47-52).

"Approved for public release, distribution unlimited"--Cover.

Also available online.

Mode of access: World Wide Web.

System requirements: Adobe Acrobat reader.

US Navy (USN) author.

dk/dk cc:9116 9/14/00