Dopant incorporation efficiency in CVD silicon carbide epilayers
By: D.J. Larkin.
Contributors: United States. National Aeronautics and Space Administration.
Series: NASA-TM -- 112756.; NASA technical memorandum -- 112756.
Publisher: National Aeronautics and Space Administration; National Technical Information Service, distributor
Published: 1996
Place of publication: [Washington, DC; Springfield, Va
Language: eng
Format: Microform
Subjects: Vapor deposition.; Silicon carbides.; Epitaxy.; Additives.
Notes: Shipping list no.: 98-0613-M.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1997] 1 microfiche.