Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry
By: Brian G. Rennex
Contributors: National Institute of Standards and Technology (U.S.)
Series: NIST special publication -- 260-121; Standard reference materials
Publisher: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology; For sale by the Supt. of Docs., U.S. G.P.O.
Published: 1994
Place of publication: Gaithersburg, MD; Washington, DC
Language: eng
Format: Microform
Number of pages: 55
Subjects: Silicon -- Oxygen content -- Measurement
Notes: Distributed to depository libraries in microfiche

Shipping list no.: 94-0735-M

"Issued August 1994."

Includes bibliographical references (p. 15)

Microfiche. [Washington, D.C.?] : Supt. of Docs., U.S. G.P.O., [1994] 2 microfiches : negative

s 1994 dcu b