Treating silicon carbide sinter by heating in nitrogen
By: S. Takahata
Contributors: United States. National Aeronautics and Space Administration; SCITRAN (Firm)
Series: NASA technical memorandum -- 77601
Publisher: National Aeronautics and Space Administration
Published: 1984
Place of publication: Washington, D.C
Language: eng
Format: Microform
Subjects: Silicon carbide
Notes: "Translation of "Tanka keiso shohketsu tai no seizo hohhoh," Japanese patent no. 58-04284, April 16, 1983, pp. 423-426."

"SCITRAN"--Tech. rept. p

"August 1984."

Microfiche. [Washington, D.C.? : National Aeronautics and Space Administration], 1984. 1 microfiche ; 11 x 15 cm

NASW 3542