Latent gate oxide damage induced by ultra-fast electrostatic discharge
By: Joachim C. Reiner.
Series: Series in microelectronics,; v. 51
Publisher: Hartung-Gorre
Published: 1995
Place of publication: Konstanz
Language: eng
Number of pages: 171
Subjects: Integrated circuits -- Very large scale integration -- Reliability.; Metal oxide semiconductors -- Reliability.; Electric discharges.; Electrostatics.
Notes: Includes bibliographical references.
Summary in German.