Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide
By: Benjamin Segall
Contributors: United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
Series: NASA technical paper -- 2170
Publisher: National Aeronautics and Space Administration, Scientific and Technical Information Branch; For sale by the National Technical Information Service]
Published: 1983
Place of publication: Washington, D.C; [Springfield, Va
Language: eng
Subjects: Gallium -- Electrometallurgy; Modulation (Electronics); Semiconductor doping
Notes: Distributed to depository libraries in microfiche

"June 1983"--Cover

STAR category 76

Includes bibliographical references