The investigation of ZnSe buffer layers for reduction of defects in heteroepitaxial growth of GaAs on silicon
By: by Daniel Anthony Huber.
Published: 1992
Language: eng
Number of pages: 114
Subjects: Gallium arsenide semiconductors -- Defects.; Gallium arsenide semiconductors -- Design and construction.; Epitaxy.; Silicon.; Zinc selenide.
Notes: Typescript.

Thesis (Ph. D.)--Washington State University, 1992.

Includes bibliographical references (leaves 109-114).

WSU:Another copy on microfilm, no. 7096.

WSU:"Program in Engineering Science."