Process design issues in hydride vapor phase epitay of indium gallium arsenide phosphide
Publisher: Gainesville, FL
Published: 1988
Language: eng
Number of pages: 257
Subjects: Indium gallium arsenide phosphide; Epitaxy; Thin films.
Description: <a href="http://uf.catalog.fcla.edu/uf.jsp?st=UF001109554&ix=nu&I=0&V=D" rel="nofollow">http://uf.catalog.fcla.edu/uf.jsp?st=UF001109554&ix=nu&I=0&V=D</a>