From STM to nanomemory
Subtitle: a transfer of technology feasibility study
By: by Jimmie Andrew Miller.
Publisher: typescript
Published: 1994
Place of publication: [s.l.]
Language: eng
Number of pages: 299
Notes: Thesis (Ph.D.) - University of Warwick, 1994.
Table of contents: title: 1. Introduction 1; title: 1.1 The nanomemory concept 2; title: 1.2 A survey of information storage developments 3; title: 1.2.1 Visual developments; title: 1.2.2 Audio devlopments; title: 1.2.3 Electromagnetic developments; title: 1.2.4 Numerical storage and calculations; title: 1.2.5 Three generations of computers; title: 1.2.6 Storage technology; title: 1.2.7 Magnetic storage operation; title: 1.3 Scanning tunneling microscopy (STM) development and operation 11; title: 1.3.1 Optical microscopes; title: 1.3.2 Scanning electron microscopes; title: 1.3.3 Mechanically contacting stylus instruments; title: 1.3.4 The Topografiner; title: 1.3.5 Scanning tunneling microscope: development; title: 1.3.6 Scanning tunneling microscope: operation; title: 1.4 Technology comparison 17; title: 1.4.1 Non-contact nature; title: 1.4.2 Reading capabilities; title: 1.4.3 Size comparison; title: 1.4.4 Positioning (or addressing) techniques; title: 1.5 Synthesis of an STM memory 19; title: 2. Scanning Tunneling Lithography: Techniques 24; title: 2.1 Mechanical contact 24; title: 2.2 Field evaporation of surface atoms 26; title: 2.3 Field deposition onto substrate 29; title: 2.4 Field induced chemical alteration of surface 31; title: 2.5 Electrical charging of insulator interlayer 33; title: 2.6 Magnetizable interlayer 34; title: 2.7 Alternate schema of reading the manufactured bits 36; title: 2.7.1 Bit reading via ac conductance; title: 2.8 Reported experiments 38; title: 2.9 Summary 39; title: 3. Scanning Tunneling Lithography: State of the Art 42; title: 3.1 Mechanical Contact Surface Alteration 43; title: 3.2 Field induced material transport 47; title: 3.3 Field induced diffusion of adsorbates 68; title: 3.4 Field induced surface alteration within a gaseous ambient 69; title: 3.5 Field induced deposition/etching within a liquid or transporting film 76; title: 3.6 Field and/or electron induced chemical modification 86; title: 3.6.1 Energetic electron induced changes within a film; title: 3.7 Illumination assisted field-induced surface lithography 95; title: 3.8 Localized electrostatic charge implantation in films 98; title: 3.9 Magnetic alteration 100; title: 3.10 Summary and discussion 101; title: 3.11 Additional Papers 112; title: 4. Scanning Tunneling Lithography: Experiments 119; title: 4.1 Quantum mechanical electron tunneling 119; title: 4.2 Alteration of a graphite surface 125; title: 4.2.1 Initial investigative experimants; title: 4.2.2 Pulse duration effects; title: 4.2.3 Initial current inconsistency; title: 4.2.4 Pulse amplitude threshold for modification; title: 4.2.5 Initial bias effects; title: 4.2.6 Other experimental observations; title: 4.2.7 Pattern generation; title: 4.2.8 Durability of bits; title: 4.2.9 Results with a data acquisition board; title: 4.2.10 Sample hold circuit for feedback limitation; title: 4.2.11 Unreliable bit-size with similar pulses; title: 4.2.12 Alteration under deionized water; title: 4.3 Surface alteration of a platinum thin film 155; title: 4.3.1 Shrinking platinum bit; title: 4.3.2 Model for platinum bit formation; title: 4.4 Summary 163; title: 5. Scanning Tunneling Lithography: Material Précis 168; title: 5.1 Ba2Sr2CaCu2Ox 168; title: 5.2 Calcium fluoride 168; title: 5.3 Cesium 169; title: 5.4 Cobalt chromium tantalum film 169; title: 5.5 Decaborane 169; title: 5.6 Doped and undoped gallium arsenide III-V semiconductors 169; title: 5.7 Germanium 170; title: 5.8 Glassy metals 171; title: 5.9 Gold 171; title: 5.10 Hexamethyl disilazane (HMDS) on copper 173; title: 5.11 Highly oriented pyrolytic graphite 173; title: 5.12 HoBa2Cu3O7-x 177; title: 5.13 Ionically conducting films: nafion on silver, AgCl4 and PdCl4 doped PVP on graphite, Ag doped MEEP on Ag 178; title: 5.14 Nickel and platinum surface diffusion 178; title: 5.15 Palladium 178; title: 5.16 Palladium silicide 178; title: 5.17 Platinum 179; title: 5.18 Poly(octadecylacrylate) 179; title: 5.19 Purple bronze, Na0.9Mo6O17 180; title: 5.20 Resists 180; title: 5.21 Rhenium (0001) 181; title: 5.22 Rb0.3MoO3 181; title: 5.23 Silicon 181; title: 5.24 Silicon nitride 183; title: 5.25 Silver 183; title: 5.26 Silver selenide Ag1.9Se 184; title: 5.27 Sulphur on rhenium under silicone oil 184; title: 5.28 Titanium oxide on platinum on mica 184; title: 5.29 Two dimensional materials : InSe, ZrS2, TiSe2, SnSe2,; title: NbSe2, TaS2, MoSe2, WSe2, WS2, PtS2, ReSe2, WTe2,; title: and MoTe2 185; title: 5.30 Tungsten diselenide 185; title: 5.31 Xenon 186; title: 5.32 YBa2Cu3O7-x 186; title: 5.33 Précis tables 187; title: 6. Mechanical and Electrical Design Considerations 199; title: 6.1 Potential degradation 199; title: 6.1.1 Parallel capacitance and resistance...; title: 6.1.2 Theoretical circuit development...; title: 6.1.3 Calculation of tip-sample capacitance; title: 6.1.4 Potential drop across tunneling junction region; title: 6.1.5 Cabling (transmission line) degradation; title: 6.1.6 Voltage source output impedance degradation; title: 6.2 Output theoretical gain of I:V converter 214; title: 6.3 Experimental response of I:V converter during; title: modification 218; title: 6.4 Summary of electronic criterion for a tunneling; title: nanomemory 220; title: 7. I(s) Characteristics and Environmental Effects 222; title: 7.1 X-ray calibrated I(s) apparatus 223; title: 7.1.1 Apparatus design...; title: 7.1.2 Design integrity evaluation; title: 7.1.3 I(s) characteristics from data; title: 7.2 Results from Nanoscope II 242; title: 7.2.1 STM z-axis calibration; title: 7.2.2 STM I(s) characteristics and atomic resolution; title: 7.2.3 Bias and pulsing dependence...; title: 7.2.4 Ambient effects...; title: 7.3 Summary and significance of results 253; title: 8. I(s) Electronic Considerations 256; title: 8.1 Tunneling revisited 256; title: 8.1.1 Barrier calculations... image charge...; title: 8.1.2 Theoretical slope determinations...; title: 8.2 Surface potential corrugations 266; title: 8.3 Anomalous STM imaging of graphite 270; title: 8.4 Recoverable, transverse current induced HOPG; title: appearance alteration 272; title: 8.5 Discussion 275; title: 9. A Potpourri of Considerations 279; title: 9.1 Silicon surface degeneration 279; title: 9.2 Thin films on silicon 281; title: 9.3 More tip geometry effects 284; title: 9.4 Discussion and summary 287; title: 10. Summary, Conclusions and Recommendations 290; title: 10.1 Historical developments 290; title: 10.2 Nanomemory synthesis 291; title: 10.3 Alteration experiments and results 291; title: 10.4 Material considerations 293; title: 10.5 STM design effects 293; title: 10.6 I(s) anomalies 294; title: 10.7 Theoretical results 295; title: 10.8 Other considerations 296; title: 10.9 Nanomemory conclusions 296; title: 10.9.1 Unfeasible methods; title: 10.9.2 Ambient considerations; title: 10.9.3 Materials selections; title: 10.9.4 A proposed memory...; title: 10.10 General conclusions 299; title: Appendix A: Computer Programs appendix a-1; title: Appendix B: Data Tables appendix b-1; title: Appendix C: Additional Graphs of Data appendix c-1; title: Appendix D: Carbon Resonance Discussion appendix d-1; title: Bibliography biblio-1