Diamond, SiC and nitride wide bandgap semiconductors
Subtitle: symposium held April 4-8, 1994,  San Francisco, California, U.S.
By: editors, Calvin H. Carter, Jr., ... [et al.].
Contributors: Carter, Calvin H.; Materials Research Society. Meeting Symposium D.
Series: Materials Research Society symposium proceedings ;; v. 339; Materials Research Society symposia proceedings ;; v. 339.
Publisher: Materials Research Society
Published: 1994
Place of publication: Pittsburgh, PA
Language: eng
Number of pages: 760
Subjects: Wide gap semiconductors -- Congresses.; Epitaxy -- Congresses.; Diamond thin films -- Congresses.; Silicon-carbide thin films -- Congresses.; Nitrides -- Electric properties -- Congresses.
Description: Of Panel Discussion: "Substrate Issues for Wide Bandgap Semiconductors" / Max N. Yoder, Peter K. Bachmann, Hiroyuki Matsunami and Hadis Morkoc -- Tight-Binding Study of the {211} [Sigma] = 3 Grain Boundary in Cubic Silicon-Carbide / M. Kohyama and R. Yamamoto -- Electronic Structures of [beta]-SiC(001) Surfaces and Al/[beta]-SiC(001) Interface / Xiao Hu, Hong Yan and Fumio S. Ohuchi -- Computer Simulation of Si and C Atoms on SiC Surfaces / C. C. Matthai, G. J. Moran and I. Morrison -- Dynamics at a Step on the Diamond (111) Surface / Brian N. Davidson and Warren E. Pickett -- Interaction of Hyperthermal Hydrogen with the Diamond Surface / David Haggerty, Christos Bandis and Bradford B. Pate -- Exposure of Diamond to Atomic Hydrogen: Secondary Electron Emission and Conductivity Effects / D. P. Malta, J. B. Posthill, T. P. Humphreys, R. E. Thomas, G. G. Fountain, R. A. Rudder, G. C. Hudson, M. J. Mantini and R. J. Markunas.
Notes: Includes bibliographical references and indexes.
"Papers presented at the 1994 MRS Spring Meeting on Diamond, SiC and Nitride Wide Bandgap Semiconductors"--Preface.