Noise characteristics of an avalanche photodiode
By: Eun Gi Kim
Contributors: Naval Postgraduate School (U.S.)
Publisher: Naval Postgraduate School
Published: 1984
Place of publication: Monterey, Calif
Language: eng
Format: [electronic resource] /
Number of pages: 45
Subjects: Physics
Description: "The responsivity, noise equivalent power, specific  detectivity, shot noise and multiplication noise of a RCA C30872 silicon reach-through avalanche photodiode were studied at 4 wavelengths 563.8 nm, 569.9 nm, 699.6 nm, and 826.2 nm. The detector noise was resolved into amplifier, shot and a multiplied leakage components as a function of the reverse bias voltage.  Experimental results are discussed and it is concluded that this photodiode has an optimum reverse bias voltage of about 250 volt that maximizes the specific detectivity and minimizes the noise  equivalent power. The avalanche photodiode excess noise factor was found to be 1.4-2.0 at low gain and increase to 9.17 at again of 440."--p. 4.
Notes: Thesis Advisor(s): D.L. Walters.

"December 1984."

Thesis (M.S. in Physics)--Naval Postgraduate School, December 1984.

Includes bibliographical references (p. 44).

"Approved for public release, distribution unlimited"--Cover.

Also available in print.

Mode of access: World Wide Web.

System requirements: Adobe Acrobat reader.

Republic of Korea Air Force, author.