Advanced high speed devices
By: editors, Michael S. Shur, Paul Maki
Contributors: Shur, Michael; Maki, Paul A., 1956-
Series: Selected topics in electronics and systems -- v. 51.; Selected topics in electronics and systems -- v. 51.
Publisher: World Scientific Publishing Co.
Published: 2010
Place of publication: Singapore
Language: eng
Number of pages: 192
ISBN-13: 9789814287869
Subjects: Very high speed integrated circuits; Congresses; Very large scale integration; Semiconductors; Transistors; Integrated circuits
Notes: "This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. Conference was known as IEEE/Cornell University Confernce on High Performance Devices"-- Preface.

Includes bibliographical references.
Table of contents: title: Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation / B. Aslan, L. F. Eastman and Q. Diduck; title: 5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes / G. Simin, M. S. Shur and R. Gaska; title: Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs / L. Wang, B. Yu, P. M. Asbeck, Y. Taur and M. Rodwell; title: A Room Temperature Ballistic Deflection Transistor for High Performance Applications / Q. Diduck, H. Irie and M. Margala; title: Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's / T. Otsuji, T. Nishimura, Y. Tsuda, Y. M. Meziani, T. Suemitsu and E. Sano; title: Millimeter Wave to Terahertz in CMOS / K. K. O. S. Sankaran, C. Cao, E.-Y. Seok, D. Shim, C. Mao and R. Han; title: The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities / A. V. Sampath, M. L. Reed, C. Moe, G. A. Garrett, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, C. Chua and N. M. Johnson; title: Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination / V. S. Chivukula, D. Ciplys, K. Liu, M. S. Shur and R. Gaska; title: Solar-Blind Single-Photon 4H-SiC Avalanche Photodiodes / A. Vert, S. Soloviev, J. Fronheiser and P. Sandvik; title: Monte Carlo Simulations of In[subscript 0.75]Ga[subscript 0.25]As MOSFETs at 0.5 V Supply Voltage for High-Performance CMOS / J. S. Ayubi-Moak, K. Kalna and A. Asenov; title: The First 70nm 6-Inch GaAs PHEMT MMIC Process / H. Karimy, L. Gunter, D. Dugas, P. G. Chao, W. Kong, S. Yang, P. Seekell, K. H. G. Duh, J. Lombardi and L. Mt Pleasant; title: High-Performance 50-nm Metamorphic High Electron-Mobility Transistors with High Breakdown Voltages / D. Xu, W. M. T. Kong, X. Yang, P. Seekell, L. Mohnkern, H. Karimy, K. H. G. Duh, P. M. Smith and P. C. Chao; title: MBE Growth and Characterization of Mg-Doped III-Nitrides on Sapphire / X. Chen, K. D. Matthews, D. Hao, W. J. Schaff, L. F. Eastman, W. Walukiewicz, J. W. Ager and K. M. Yu; title: Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces / K. Tang, W. Huang and T. P. Chow; title: High Current Density/High Voltage AlGaN/GaN HFETs on Sapphire / J. Shi, M. Pophristic and L. F. Eastman; title: InAlN/GaN MOS-HEMT with Thermally Grown Oxide / M. Alomari, F. Medjdoub, E. Kohn, M.-A. di Forte-Poisson, S. Delage, J.-F. Carlin, N. Grandjean and C. Gaquiere; title: GaN Transistors for Power Switching and Millimeter-Wave Applications / T. Ueda, Y. Uemoto, T. Tanaka and D. Ueda; title: 4-nm AlN Barrier All Binary HFET with SiN[subscript x] Gate Dielectric / T. Zimmermann, Y. Cao, D. Jena, H. G. Xing and P. Saunier; title: Effect of Gate Oxide Processes on 4H-SiC MOSFETs on (000-1) Oriented Substrate / H. Naik, K. Tang and T. P. Chow; title: Characterization and Modeling of Integrated Diode in 1.2kV 4H-SiC Vertical Power MOSFET / H. Naik, Y. Wang and T. P. Chow; title: Packaging and Wide-Pulse Switching of 4 mm x 4 mm Silicon Carbide GTOs / H. O'Brien and M. G. Koebke; title: Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles / D. P. Urciuoli and V. Veliadis.