Operation and modeling of the MOS transistor
By: Yannis Tsividis.
Edition: 2nd ed.
Publisher: WCB/McGraw-Hill
Published: 1998
Place of publication: Boston
Language: eng
Number of pages: 620
Subjects: Metal oxide semiconductors -- Mathematical models.; Metal oxide semiconductor field-effect transistors -- Mathematical models.
Other titles: MOS transistor
Description: Extensively revised and updated, this, the second edition of the text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor - the key element of most modern microelectronic chips.
Notes: Includes bibliographical references and index.