Fundamentals of modern VLSI devices
By: Yuan Taur, Tak H. Ning.
Contributors: Ning, Tak H., 1943-
Publisher: Cambridge University Press
Published: 1998
Place of publication: Cambrige, UK; New York
Language: eng
Number of pages: 469
Subjects: Metal oxide semiconductors, Complementary.; Bipolar transistors.; Integrated circuits -- Very large scale integration.
Description: The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance.

The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.
Notes: Includes bibliographical references (p. 449-460) and index.