Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP
By: Dragan M. Pantic ... [et al.] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.
Contributors: Pantic, Dragan M.; Electrochemical Society.; United States. National Aeronautics and Space Administration.; Symposium on Dielectric Films on Compound Semiconductors.
Series: NASA technical memorandum -- 102544.
Publisher: NASA; For sale by the National Technical Information Service
Published: 1990
Place of publication: [Washington, D.C.]; Springfield, Va
Language: eng
Format: Microform
Number of pages: 15
Subjects: Dielectric films.; Capacitance-voltage characteristics.; Electron beams.; Indium phosphides.; Irradiation.; Phosphorus.; Plasmas (Physics); Radiation damage.; Vapor deposition.
Notes: Cover title.

Includes bibliographical references (p. 13).

Also available via Internet from the NASA Technical Report Server web site. Address as of 5/9/06: http://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19900011077%5F1990011077.pdf ; current access is available via PURL.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration], 1990. 1 microfiche : negative.