Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals
By: Hiroshi Mishina and Donald H. Buckley.
Contributors: Buckley, Donald H.; United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch.
Series: NASA technical paper -- 2405.
Publisher: National Aeronautics and Space Administration, Scientific and Technical Information Branch
Published: 1984
Place of publication: [Washington, D.C.?]
Language: eng
Format: Microform
Subjects: Gallium compounds.; Silicon.
Notes: "December 1984"--Cover.

"N85-13044"--Microfiche header.

Bibliography: p. 9.

Microfiche. [Washington, D.C.? : National Aeronautics and Space Administration], 1985. 1 microfiche ; 11 x 15 cm.