Ferroelectric Random Access Memories
Subtitle: Fundamentals and Applications (Topics in Applied Physics)
Contributors: Hiroshi Ishiwara (Editor); Masanori Okuyama (Editor); Yoshihiro Arimoto (Editor)
Edition: 1 edition
Publisher: Springer
Published: May 27, 2004
Language: eng
Format: Hardcover
Number of pages: 290
ISBN-13: 9783540407188
Subjects: Electronic devices & materials; Storage media & peripherals; Physics; Computers - General Information; Science; Science/Mathematics; Computer Engineering; Metallurgy; Technology / Metallurgy; Ferroelectric storage cells
First sentence: The recent development of ferroelectric random access memories (FeRAMs) has shown that extremely high-density ferroelectric memory devices (ULSI) will become commercially feasible within the next few years [1,2,3].
Description: In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.