Characterization of oxygen and carbon effects in silicon material and MOSFET devices
By: by Homayoon Haddad.
Published: 1990
Language: eng
Number of pages: 117
Subjects: Metal oxide semiconductor field-effect transistors.; Silicon.
Notes: Typescript (photocopy).

Thesis (Ph. D.)--Oregon State University, 1990.

Includes bibliography (leaves 111-117).