Ka-band GaAs FET monolithic power amplifier development
Subtitle: [contract no. NAS3-24239]
By: Paul Saunier and Hua Quen Tserng.
Contributors: Tserng, Hua Quen.; United States. National Aeronautics and Space Administration.
Series: NASA contractor report -- 202348.; NASA contractor report -- NASA CR-202348.
Publisher: National Aeronautics and Space Administration; National Technical Information Service, distributor
Published: 1997
Place of publication: [Washington, DC; Springfield, Va
Language: eng
Format: Microform
Subjects: Power amplifiers.; Field effect transistors.; Molecular beam epitaxy.; High electron mobility transistors.; Aluminum gallium arsenides.; Microwave circuits.; Integrated circuits.; Indium gallium arsenides.
Other titles: Final technical progress for Ka-band GaAs FET monolithic power amplifier development.
Notes: Shipping list no.: 98-1033-M.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1997] 1 microfiche.