Hydrogenated amorphous silicon grown at low temperature using the dc saddle-field deposition system.
Published: 2004
Language: eng
Number of pages: 92
Description: A study of the dependence of amorphous silicon film properties on temperature has been carried out using the dc saddle-field glow discharge deposition method. Depositions were carried out using pure silane at substrate temperatures ranging from 50&deg;C to 200&deg;C. The electrical, optical and structural properties of the films were determined. The depositions were completed on a variety of substrates which were either electrically floating or held at electrical ground. Films grown under floated conditions showed an improvement in quality with increasing temperature while film quality improved at lower temperatures when grown on a grounded substrate. This result was attributed to enhanced ion bombardment occurring on the grounded substrates during growth. Application of a negative bias to the entire substrate holder was shown to enhance this effect. A low temperature solar cell was grown successfully and demonstrates the viability of low temperature photovoltaics.
Notes: Advisers:  S. Zukotynski; N. Kherani.

Thesis (M.A.Sc.)--University of Toronto, 2004.

Electronic version licensed for access by U. of T. users.

Source: Masters Abstracts International, Volume: 43-03, page: 0942.

MICR copy on microfiche (2 microfiches).