An examination of point defects and atomic diffusion in silicon
By: by Tyrus K. Monson.
Published: 1995
Language: eng
Number of pages: 68
Subjects: Silicon -- Defects.; Silicon -- Diffusion rate.
Notes: Typescript (photocopy)

Thesis (Ph.D.)--Oregon State University, 1996.

Includes bibliographical references (leaves 62-66).