Properties of aluminium gallium arsenide
By: edited by Sadao Adachi
Contributors: Institution of Electrical Engineers; INSPEC (Information service); Knovel (Firm)
Series: EMIS datareviews series -- no. 7; EMIS datareviews series -- no. 7.
Publisher: IEE; INSPEC
Published: 1993
Place of publication: London
Language: eng
Number of pages: 325
Copyright date: 1993
Subjects: Compound semiconductors; Gallium arsenide semiconductors; Aluminum alloys
Notes: Includes bibliographical references and index.

Electronic reproduction. Norwich, N.Y. : Knovel, 2005. System requirements: Adobe Acrobat Reader. Available via the World Wide Web. Access restricted to users at licensed institutions. Includes interactive index.
Table of contents: title: Structural properties / D. Cherns, T.S. Kuan, N.S. Takahashi; title: Mechanical, elastic and lattice vibrational properties / S. Adachi, W.D. Hunt, B. Jusserand; title: Thermal properties / S. Adachi, N.S. Takahashi; title: Energy-band structure consequences / S. Adachi ... [et al.]; title: Optical properties / S. Adachi, W. Szuszkiewicz; title: Electro-optic properties / S. Adachi, C.C. Phillips, D.J. Robbins; title: Carrier transport properties / R.K. Ahrenkiel ... [et al.]; title: Surfaces, interfaces and contacts / H.L. Hartnagel ... [et al.]; title: Impurities and defect centres / L. Dobaczewski ... [et al.].