IWN Nagoya 2000
Subtitle: International Workshop on Nitride Semiconductors : IWN2000 : September 24-27, 2000, Nagoya Congress Center, Nagoya, Japan
By: sponsored by the Japan Society of Applied Physics ; co-sponsored by Solid State Physics and Applications Division, the Japan Society of Applied Physics, the 162nd Committee on Short-wavelength Optoelectronic Devices, Japan Society for the Promotion of Science ; in cooperation with the 125th Committee on Conversion between Light and Electricity, Japan Society for the Promotion of Science.
Contributors: Institute of Pure and Applied Physics.; Ōyō Butsuri Gakkai.; Ōyō Butsuri Gakkai. Solid State Physics and Applications Division.; Nihon Gakujutsu Shinkōkai.; Nihon Gakujutsu Shinkōkai. 162nd Committee on Short-wavelength Optoelectronic Devices.; Nihon Gakujutsu Shinkōkai. 125th Committee on Conversion Between Light and Electricity.
Series: IPAP conference series ;; 1.
Publisher: Institute of Pure and Applied Physics
Published: 2000
Place of publication: Tokyo
Language: eng
Number of pages: 1002
Subjects: Gallium nitride -- Congresses.; Semiconductors -- Congresses.
Genres: Congresses.
Notes: Includes bibliographical references and index.