Imaging study of multi-crystalline silicon wafers throughout the manufacturing process
Subtitle: preprint
By: Steve Johnston ... [et al.].
Contributors: National Renewable Energy Laboratory (U.S.); Colorado State University; Calisolar; IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
Series: NREL/CP -- 5200-50724; Conference paper (National Renewable Energy Laboratory (U.S.)) -- NREL/CP-5200-50724.
Publisher: National Renewable Energy Laboratory
Published: 2011
Place of publication: Golden, CO]
Language: eng
Format: [electronic resource] :
Subjects: Photovoltaic cells; Research; Silicon solar cells; Design and construction; Testing; Photoluminescence
Other titles: Imaging study of multi crystalline silicon wafers throughout the manufacturing process
Description: Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finished cell performance.
Notes: Title from title screen (viewed August 8, 2011).

"July 2011."

"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."

Includes bibliographical references (p. 6).

DE-AC36-08GO28308

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