Cohesive properties of semiconductors under laser irradiation
By: edited by Lucien D. Laude.
Contributors: Laude, Lucien D.; North Atlantic Treaty Organization. Scientific Affairs Division.
Series: NATO ASI series.; no. 69
Publisher: M. Nijhoff; Distributors for the United States and Canada, Kluwer Boston
Published: 1983
Place of publication: The Hague; Boston; Hingham, MA
Language: eng
Number of pages: 614
Subjects: Semiconductors -- Effect of radiation on -- Congresses.; Laser beams -- Congresses.
Notes: Includes bibliographical references and index.
Proceedings of the NATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation, Cargèse, Corsica, France, July 19-30, 1982.
"Published in cooperation with NATO Scientific Affairs Division."