Automatic determination of the interstitial oxygen content of silicon wafers polished on both sides
By: Warren K. Gladden ... [et al.].
Contributors: Gladden, Warren K.
Series: Semiconductor measurement technology; NIST special publication -- 400-81.
Publisher: U.S. Dept. of Commerce, National Institute of Standards and Technology; For sale by the Supt. of Docs., U.S. G.P.O.
Published: 1988
Place of publication: Gaithersburg, MD; Washington, DC
Language: eng
Format: Microform
Number of pages: 66
Subjects: Semiconductors -- Measurement -- Data processing.; Silicon -- Spectra.; Infrared spectroscopy -- Computer programs.
Notes: Microfiche. Washington, D.C. : U.S. G.P.O. 1991. 1 microfiche : negative.