Chemical Vapor Deposition of Thin Film Materials for Copper Interconnects in Microelectronics
Contributors: Gordon, Roy G.; Betley, Ted; Vlassak, Joost
Published: 2012
Language: eng
Description: The packing density of microelectronic devices has increased exponentially over the past four decades. Continuous enhancements in device performance and functionality have been achieved by the introduction of new materials and fabrication techniques. This thesis summarizes the thin film materials and metallization processes by chemical vapor deposition (CVD) developed during my graduate study with Professor Gordon at Harvard University. These materials and processes have the potential to build future generations of microelectronic devices with higher speeds and longer lifetimes.
Notes: Keywords: Barrier and adhesion layer, Chemical vapor deposition, Copper interconnects, Direct-liquid-injection, Manganese, Microelectronics.

Thesis Ph.D. Harvard University 2012