High Permittivity Gate Dielectric Materials
By: edited by Samares Kar
Contributors: SpringerLink (Online service)
Series: Springer Series in Advanced Microelectronics -- 43
Publisher: Springer Berlin Heidelberg; Imprint: Springer
Published: 2013
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 489
ISBN-13: 9783642365355
Subjects: Spectroscopy and Microscopy; Optical and Electronic Materials; Instrumentation Electronics and Microelectronics; Engineering; Engineering, general; Electronics; Optical materials; Solid state physics
Description: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
Table of contents: title: Historical Perspectives; title: High Mobility Channels; title: Non-Volatile Memory; title: Hafnium-Based Gate Dielectric Materials; title: Lanthanum-Based High-K Gate Dielectric Materials; title: Crystalline High-K Gate Dielectric Materials; title: High-K Gate Dielectric Processing.- Metal Gate Electrodes; title: Flat-Band/Threshold Voltage Control; title: Interfaces and Defects; title: Electrical Characterization and Parameter Extraction; title: Non-Contact Metrology of High-K Gate Dielectrics; title: Channel Mobility; title: High-K Gate Dielectric Reliability Issues; title: Bias Temperature Instability; title: Integration Issues.  .