Growth of optoelectronic device-quality In0.4Ga0.6As on GaAs by molecular beam epitaxy
By: by Paulo Roberto Fogaça Ribas
Published: 1990
Language: eng
Number of pages: 149
Notes: Typescript.

"0.4" and "0.6" are subscript in title.

Vita.

Thesis (Ph. D.)--University of Florida, 1990.

Includes bibliographical references (leaves 144-147).