Electrical transport properties of holes in silicon and germanium
By: by Hidemoto Nakagawa.
Contributors: Toronto, Ont. University.
Publisher: s.n.]
Published: 1978
Place of publication: [Toronto
Language: eng
Number of pages: 150
Subjects: Holes (Electron deficiencies); Transport theory
Notes: Thesis--University of Toronto.

Vita.

Includes bibliography.