Nichtquasistatisches MOS-Transistormodell
By: Carsten Matthes
Series: Fortschritt-Berichte VDI. Reihe 9, Elektronik -- Nr. 290; Fortschritt-Berichte der VDI-Zeitschriften -- Nr. 290.
Publisher: VDI Verlag
Published: 1999
Place of publication: Düsseldorf
Language: ger
Number of pages: 214
Subjects: Mathematical models; Metal oxide semiconductors
Other titles: Nichtquasistatisches MOSFET-Modell
Notes: Added t.p. with dissertation statement.

Originally presented as the author's thesis (doctoral)--Universität Bundeswehr München, 1998.

Includes bibliographical references (p. 202-214).