The physical properties of grown p-i-n junctions in silicon carbide
By: by C.A.A.J. Greebe.
Series: Philips research reports.; 1963, no. 1
Publisher: Philips Research Laboratories
Published: 1963
Place of publication: Eindhoven, Netherlands
Language: eng
Number of pages: 76
Subjects: Semiconductors -- Junctions.; Crystal growth.; Silicon carbide -- Electric properties.
Notes: Includes bibliographical references.