Bulk growth of wide band gap II-VI compound semiconductors by physical vapor transport
By: Ching-Hua Su.
Contributors: United States. National Aeronautics and Space Administration.
Series: [NASA technical memorandum] -- 207367.; NASA technical memorandum -- 207367.
Publisher: Society of Photo-Optical Instrumentation Engineers; National Aeronautics and Space Administration; National Technical Information Service, distributor]
Published: 1997
Place of publication: Bellingham, Wash; [Washington, D.C; Springfield, Va
Language: eng
Format: Microform
Subjects: Vapor phases.; Broadband.; Semiconductors (Materials); Heat treatment.; Gas transport.; Electromagnetic absorption.; Residual gas.
Notes: Shipping list no.: 99-0618-M.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1998] 1 microfiche.