Analysis and Design of Mosfets
Subtitle: Modeling, Simulation and Parameter Extraction
By: by J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez
Contributors: Ortiz-Conde, A.; Garcia-Sanchez, F.
Publisher: Springer US
Published: 1998
Place of publication: Boston, MA
Language: eng
Format: [electronic resource] :
Number of pages: 349
ISBN-13: 9781461374732; 9781461554158
Subjects: Systems engineering; Engineering; Computer engineering
Description: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
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