SiC Materials and Devices, Volume 52 (Semiconductors and Semimetals)
Contributors: Robert K. Willardson (Series Editor); Eicke R. Weber (Series Editor)
Publisher: Academic Press
Published: May 27, 1998
Language: eng
Format: Hardcover
Number of pages: 420
ISBN-13: 9780127521602
Subjects: Circuits & components; Electricity, magnetism & electromagnetism; Materials science; Optics; Electric Conductivity; Science; Technology & Industrial Arts; Science/Mathematics; Physics; Electronics - Semiconductors; Engineering - Electrical & Electronic; Silicon-carbide thin films; Technology / Electronics / Semiconductors; Technology / Optics; Technology : Engineering - Electrical & Electronic; Technology : Optics; Wide gap semiconductors; Electromagnetism
First sentence: Wide energy bandgaps, high thermal conductivity, high saturated electron drift velocities, and high-breakdown electric fields make silicon carbide (SiC) a candidate of choice for high-temperature, high-speed, high-frequency, and high-power applications.