Effect of tilt angle on the morphology of SiC epitaxial films grown on vicinal (0001)SiC substrates
By: J.A. Powell ... [et al.].
Contributors: Powell, J. Anthony.; United States. National Aeronautics and Space Administration.
Series: NASA-TM -- 112470.; NASA technical memorandum -- 112470.
Publisher: National Aeronautics and Space Administration; National Technical Information Service, distributor
Published: 1996
Place of publication: [Washington, D.C; Springfield, Va
Language: eng
Format: Microform
Subjects: Morphology.; Silicon.; Epitaxy.; Thin films.; Atoms.
Notes: Shipping list no.: 99-0055-M.

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1997] 1 microfiche.