Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 2
Subtitle: new materials, processes and equipment
By: editors F. Roozeboom ... [et al.].
Contributors: Roozeboom, Fred.; Electrochemical Society. Electronics Division.; Electrochemical Society. Dielectric Science and Technology Division.; Electrochemical Society. High Temperature Materials Division.; Electrochemical Society. Meeting
Series: ECS transactions -- v. 3, nr. 2
Publisher: Electrochemical Society
Published: 2006
Place of publication: Pennington, NJ
Language: eng
Number of pages: 460
Subjects: Metal oxide semiconductors, Complementary -- Congresses; Metal oxide semiconductors -- Materials -- Congresses; Gate array circuits -- Materials -- Congresses
Genres: Congresses.
Notes: Papers presented at the 2nd International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS, held Oct. 30-Nov. 2, 2006, Cancún, Mexico, as part of the 210th meeting of the Electrochemical Society.

Includes bibliographical references and index.