Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)
By: Jon C. Freeman.
Contributors: NASA Glenn Research Center.
Series: NASA/TM -- 2003-211983.; NASA technical memorandum -- 211983.
Publisher: National Aeronautics and Space Administration, Glenn Research Center; Available from NASA Center for Aerospace Information; National Technical Information Service [distributor
Published: 2003
Place of publication: [Cleveland, Ohio]; Hanover, MD; Springfield, VA
Language: eng
Format: Microform
Subjects: Gallium nitrides.; Field effect transistors.; High electron mobility transistors.
Notes: Shipping list no.: 2003-0339-M.

Also available via Internet from the Glenn Research Center web site. Address as of 1/21/04: http://gltrs.grc.nasa.gov/reports/2003/TM-2003-211983.pdf; current access available via PURL.

Microfiche. [Washington, D.C.] : Supt. of Docs., U.S. G.P.O., [2003] 1 microfiche.