Mobility and impact ionization in silicon at high temperature
By: Chiara Corvasce.
Edition: 1st ed.
Series: Series in microelectronics -- v. 183
Publisher: Hartung-Gorre
Published: 2007
Place of publication: Konstanz
Language: eng
Number of pages: 209
Subjects: Silicon.; Semiconductors.; Silicon -- Effect of temperature on.; Electron impact ionization.
Notes: Originally presented as the author's thesis (doctoral)--Eidgenössische Techn. Hochsch., Zürich.

"Reprint of Diss. ETH no. 16759"--T.p. verso.

Includes bibliographical references (p. 197-208).