Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design
By: Alex Huber
Edition: 1. Aufl.
Series: Series in microelectronics -- v. 99
Publisher: Hartung-Gorre
Published: 2000
Place of publication: Konstanz
Language: eng
Number of pages: 170
Subjects: Radio circuits; Indium phosphide; Gallium arsenide semiconductors; Bipolar transistors; Design and construction
Notes: Summary in German and English.

Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 13547.

Includes bibliographical references.