Nyquist AD Converters, Sensor Interfaces, and Robustness
Subtitle: Advances in Analog Circuit Design, 2012
By: edited by Arthur H.M. van Roermund, Andrea Baschirotto, Michiel Steyaert
Contributors: Baschirotto, Andrea; Steyaert, Michiel, 1959-; SpringerLink (Online service)
Publisher: Springer New York; Imprint: Springer
Published: 2013
Place of publication: New York, NY
Language: eng
Format: [electronic resource] :
Number of pages: 291
ISBN-13: 9781461445876
Subjects: Systems engineering; Engineering; Instrumentation Electronics and Microelectronics; Electronics; Circuits and Systems
Description: <p>This book is based on the presentations during the 21st workshop on Advances in Analog Circuit Design.  Expert designers provide readers with information about a variety of topics at the frontier of analog circuit design, including Nyquist analog-to-digital converters, capacitive sensor interfaces, reliability, variability, and connectivity.  This book serves as a valuable reference to the state-of-the-art, for anyone involved in analog circuit research and development.  </p><ul><li>Provides a state-of-the-art reference in analog circuit design, written by experts from industry and academia;</li><li>Presents material in a tutorial-based format;</li><li>Includes coverage of Nyquist A/D converters, capacitive sensor interfaces, reliability, variability, and connectivity.</li></ul>
Table of contents: title: <p>Part I: Nyquist A/D Converters; title: High Performance Pipelined A/D Converters in CMOS and BiCMOS Processes; title: Dual Residue Pipeline ADC; title: Time-Interleaved SAR and Slope Converters; title: GS/s AD Conversion for Broadband Multi-Stream Reception; title: CMOS Ultra High-Speed Time-Interleaved ADCs; title: CMOS ADCs for Optical Communications; title: Part II: Capacitive Sensor Interfaces.-MEMS and Sensors, Today and Tomorrow; title: Energy-Efficient Capacitive Sensor Interfaces; title: Interface Circuits for MEMS Microphones; title: Front-End Electronics for Solid State Detectors in Present and Future High-Energy Physics Experiments; title: Part III: Robustness; title: How Can Chips Live Under Radiation?; title: TDC and Rad Environments; title: Matching and Resolution; title: Matching in Polymer and Effect on Circuit Topologies; title: Statistical Variability and Reliability in Nano-CMOS Transistors.</p>.