Charge loss modeling for EPROMs with ONO interpoly dielectric
By: Martin R. Herrmann.
Edition: 1. Aufl.
Series: Series in microelectronics,; volume 42; Series in microelectronics ;; v. 42.
Publisher: Hartung-Gorre Verlag
Published: 1994
Place of publication: Konstanz, [Germany]
Language: eng
Number of pages: 101
Subjects: Dielectric loss.; Charge transfer.; Microelectronics.; Computer storage devices.
Description: "The investigations presented in this work identify the origin of intrinsic long term charge loss in EPROMs with ONO interploy dielectric and model the charge transport through the ONO dielectric as a function of electric field and temperature"--Abstract.
Notes: Includes bibliographical references (p. 91-99).
"Nachdruck der Diss. ETH Nr. 10817"--T.p. verso.
Zurich, Techn. Hochsch., Dissertation, 1994.
Abstract in English and German.