General electrothermal semiconductor device simulation
By: Kevin Kells.
Contributors: Eidgenössische Technische Hochschule Zürich.
Edition: 1. Aufl.
Series: Series in microelectronics ;; volume 37.; Series in microelectronics ;; v. 3726.
Publisher: Hartung-Gorre Verlag
Published: 1994
Place of publication: Konstanz
Language: eng
Number of pages: 141
Subjects: Semiconductors -- Computer simulation.; Semiconductors -- Electric properties -- Mathematical models.; Semiconductors -- Thermal properties -- Mathematical models.
Description: This thesis presents a robost implementation of an electrothermal model for computer simulation of semiconductor devces. The ability to predict electrothermal effects using computer simulation methods has become paramount to microsensor design as well as estimation of maximum power handling capability, short circuit behavior, etc. in power devices. The author presents the background for the electrothermal model and its implementation in the program Simul, as well as its application to power devices such as the p-i-n diode and the IGBT"--Back cover.
Notes: Includes bibliographical references (p. 125-137) and index.
Nachdruck der Diss. ETH Nr. 10680.
Text in English and abstract in English and German.