Dilute Nitride Semiconductors
Publisher: Elsevier Science
Published: March 23, 2005
Language: eng
Number of pages: 640
ISBN-13: 9780080445021
First sentence: The level of research activity on GaInNAs and GaInNAsSb has increased dramatically since the discovery by Weyers et al. in 1992 and Kondow et al. in 1994 that the band gap of GaAs decreased rapidly with the addition of small atomic fractions of N [1-3].