Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon
By: Martin G. Buehler.
Series: Semiconductor measurement technology; NBS special publication ; 400-22; NBS special publication ;; 400-22.
Publisher: U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off.
Published: 1976
Place of publication: [Washington]
Language: eng
Number of pages: 49
Subjects: Semiconductors -- Testing.; Silicon -- Testing.; Microelectronics.
Other titles: Microelectronic test pattern NBS-3 ...
Notes: Includes bibliographical references.