High performance InP-based HEMTs with dry etched gate recess
By: Halit C. Duran.
Edition: 1. Aufl.
Series: Series in microelectronics,; v. 78
Publisher: Hartung-Gorre Verlag
Published: 1998
Place of publication: Konstanz
Language: eng
Number of pages: 127
Subjects: Modulation-doped field-effect transistors.
Notes: Abstract also in German.
Includes bibliographical references (p. 107-123).