Electronic Transport in Hydrogenated Amorphous Semiconductors
By: by Harald Overhof, Peter Thomas
Contributors: Thomas, Peter
Series: Springer Tracts in Modern Physics -- 114; Springer tracts in modern physics -- 114.
Publisher: Springer Berlin Heidelberg
Published: 1989
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 176
ISBN-13: 9783540501862; 9783540459484
Subjects: Physics; Condensed matter
Description: Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices for practical applications are already being manufactured). Most of the relevant literature is reviewed with particular emphasis on the approach developed by the authors. It explains most of the experimental data and allows the extraction of information about microscopic transport processes and parameters from equilibrium transport data. This work treats electronic transport in the mentioned type of semiconductors and in particular in a-Si:H and a-Ge:H. From elementary concepts the theory is developed towards higher degrees of completeness and sophistication. Further refinements for coping with the complexity of real systems are given. The comparison of theory with experiment is an important part of the book.
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Table of contents: title: Contents: Introduction; title: Elementary Treatment of Transport in Amorphous Semiconductors; title: Review of Transport Experiments; title: A Transport Theory for a Homogeneous Model; title: Detailed Presentation of the Theory; title: The Long-Ranged Random Potential; title: Temperature Dependent Reference Energies; title: The Transport Properties of Hydrogenated Amorphous Semiconductors; title: Concluding Remarks; title: References; title: Author Index; title: Subject Index.