Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition
By: R.A. Outlaw and P. Hopson, Jr
Contributors: Hopson, P; United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
Series: NASA technical paper -- 2532
Publisher: National Aeronautics and Space Administration, Scientific and Technical Information Branch; For sale by the National Technical Information Service]
Published: 1986
Place of publication: [Washington, DC]; [Springfield, Va
Language: eng
Format: Microform
Other titles: Growth of high quality thin film Ge single crystals by plasma-enhanced chemical vapor deposition
Notes: Distributed to depository libraries in microfiche

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1986] 1 microfiche