Design of Shallow p-type Dopants in ZnO (Presentation)
By: Su-Huai Wei, J. Li, and Y. Yan
Contributors: Li, J.; Yan. Y.; United States. Department of Energy; National Renewable Energy Laboratory (U.S.); United States. Department of Energy. Office of Scientific and Technical Information; IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.)
Series: NREL/PR -- 520-43248; NREL/PR -- 520-43248.
Publisher: United States. Dept. of Energy; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Published: 2008
Place of publication: Washington, D.C; Oak Ridge, Tenn
Language: eng
Format: [electronic resource] /
Number of pages: 32
Subjects: Semiconductor doping; Doped semiconductors; Crystals; Defects
Description: ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
Notes: Published through the Information Bridge: DOE Scientific and Technical Information.

"May 2008."

Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.

National Renewable Energy Laboratory (NREL), Golden, CO.

DE-AC36-99GO10337