Properties of advanced semiconductor materials
Subtitle: GaN, AlN, InN, BN, SiC, SiGe
By: edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur
Contributors: Levinshteĭn, M. E.; Rumyantsev, Sergey L; Shur, Michael
Publisher: Wiley
Published: 2001
Place of publication: New York
Language: eng
Number of pages: 194
Subjects: Semiconductors -- Materials
Notes: Includes bibliographical references
Table of contents: title: Gallium nitride (GaN) / V. Bougrov ... [et al.]; title: Aluminum nitride (AIN) / Yu. Goldberg; title: Indium nitride (InN) / A. Zubrilov; title: Boron nitride (BN) / S. Rumyantsev ... [et al.]; title: Silicon carbide (SiC) / Yu. Goldberg, M. Levinshtein, and S. Rumyantsev; title: Silicon-germanium (Si[subscript 1-x]Ge[subscript x]) / F. Schäffler