Effect of high temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe
By: Susan L. Draper.
Contributors: United States. National Aeronautics and Space Administration.
Series: NASA technical memorandum -- 100164
Publisher: National Aeronautics and Space Administration; For sale by the National Technical Information Service
Published: 1987
Place of publication: [Washington, DC]; [Springfield, Va
Language: eng
Format: Microform
Subjects: Annealing of metals.
Notes: Distributed to depository libraries in microfiche.

Microfiche. [Washington, D.C.? : National Aeronautics and Space Administration], 1987. 1 microfiche.