Silicon-Based Millimeter-Wave Devices
By: edited by Johann-Friedrich Luy, Peter Russer
Contributors: Russer, Peter
Series: Springer Series in Electronics and Photonics -- 32; Springer Series in Electronics and Photonics -- 32
Publisher: Springer Berlin Heidelberg
Published: 1994
Place of publication: Berlin, Heidelberg
Language: eng
Format: [electronic resource] /
Number of pages: 343
ISBN-13: 9783642790331; 9783642790317
Subjects: Electronics; Telecommunication; Optical materials
Description: Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.
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