The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
By: Sheng S. Li.
Series: Semiconductor measurement technology; NBS special publication ; 400-33; NBS special publication ;; 400-33.
Publisher: U.S. Dept. of Commerce, National Bureau of Standards ; for sale by the Supt. of Docs., U.S. Govt. Print. Off.
Published: 1977
Place of publication: Washington
Language: eng
Number of pages: 28
Subjects: Silicon -- Electric properties.; Semiconductor doping.; Electron mobility.; Electric resistance.
Notes: Includes bibliographical references.