A P-well GaAs MESFET technology
By: by Philip C. Canfield.
Published: 1990
Language: eng
Number of pages: 124
Subjects: Metal semiconductor field-effect transistors.; Gallium arsenide semiconductors.
Notes: Typescript (photocopy)

Thesis (Ph. D.)--Oregon State University, 1991.

Includes bibliographical references (leaves 111-118)