Ionizing Radiation Effects in Mos Oxides
Series: International Series on Advances in Solid State Electronics and Technology
Publisher: World Scientific Publishing Company
Published: June 2000
Language: eng
Format: Hardcover
Number of pages: 188
ISBN-13: 9789810233266
Subjects: Atomic & molecular physics; Condensed matter physics (liquids & solids); Electronics engineering; Electronics - Solid State; Metal Oxide Semiconductors (Mos); Physical Properties Of Materials; Technology; Technology & Industrial Arts; Science/Mathematics; Physics; Electronics - Semiconductors
First sentence: One of the major effects associated with radiation-induced ionization in electronic materials is that of trapped-charge buildup, which induces internal space-charge fields that interfere with the normal (designed) operation and control of devices.