Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3
Subtitle: new materials, processes and equipment
By: editors M.C. Őztrűrk ... [et al.].
Contributors: Öztürk, Mehmet C.; Electrochemical Society. Electronics and Photonics Division.; Electrochemical Society. Dielectric Science and Technology Division.; Electrochemical Society. High Temperature Materials Division.; Electrochemical Society. Meeting
Series: ECS transactions -- vol. 6, no. 1
Publisher: Electrochemical Society
Published: 2007
Place of publication: Pennington, N.J
Language: eng
Number of pages: 470
ISBN-13: 9781566775502
Subjects: Metal oxide semiconductors, Complementary -- Congresses; Metal oxide semiconductors -- Materials -- Congresses; Gate array circuits -- Materials -- Congresses
Genres: Congresses
Notes: Proceedings of the International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ... held in May 6-10, 2007 in Chicago ... as a part of the 211th Meeting of the Electrochemical Society.

"Sponsoring divisions: Electronics and Photonics, Dielectric Science and Technology, and High Temperature Materials"--T.p.

Includes bibliographical references and index.