Quantum-mechanical modeling of transport parameters for MOS devices
By: Timm Höhr.
Edition: 1st ed.
Series: Series in microelectronics -- v. 174
Publisher: Hartnung-Gorre
Published: 2006
Place of publication: Konstanz
Language: eng
Number of pages: 133
Subjects: Metal oxide semiconductors -- Mathematical models; Metal oxide semiconductor field-effect transistors -- Mathematical models
Notes: Summary in German and English, text in English.

Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228.

Includes bibliographical references (p. 123-132).