2010 wide bandgap cubic semiconductors
Subtitle: from growth to devices : proceedings of the E-MRS Symposium F, Strasbourg, France, 8-10 June 2010
By: editors, Gabriel Ferro, Paul Siffert ; sponsoring organizations [i.e. organization], European Science Foundation
Contributors: European Materials Research Society. Meeting; American Institute of Physics; European Science Foundation
Series: AIP conference proceedings -- 1292; AIP conference proceedings -- no. 1292.
Publisher: American Institute of Physics
Published: 2010
Place of publication: Melville, N.Y
Language: eng
Number of pages: 224
ISBN-13: 9780735408470
Subjects: Wide gap semiconductors; Congresses
Other titles: Wide bandgap cubic semiconductors; Proceedings of the E-MRS Symposium F
Notes: Includes bibliographical references and index.
Table of contents: title: Cubic silicon carbide (3C-SiC). 3C-SiC epitaxial growth; title: 3C-SiC characterizations and devices; title: Diamond growth, characterizations and devices; title: Cubic III-nitride growth, chracterizations and devices; title: Other wide bandgap cubic semiconductors and heterostructures.