Structure and properties of dislocations in semiconductors 1989
Subtitle: proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989
By: edited by S.G. Roberts, D.B. Holt, and P.R. Wilshaw.
Contributors: Roberts, S. G.; Holt, D. B.; Wilshaw, P. R.
Series: Institute of Physics conference series ;; no. 104
Publisher: Institute of Physics
Published: 1989
Place of publication: Bristol; New York
Language: eng
Number of pages: 470
Subjects: Semiconductors -- Defects -- Congresses.; Dislocations in crystals -- Congresses.; Dislocations in metals -- Congresses.
Notes: Includes bibliographical references and indexes.