omniomni/omni-engineering huggingface dataset:
Nintendo Integrated Research & Development. commonly abbreviated as Nintendo IRD, was a Japanese developments division that handled everything related to producing Nintendo's console hardware and associated peripherals. Originally established in the 1970s with engineer Genyo Takeda acting as manager, Nintendo Research & Development No. 3 Department and part of the Manufacturing Division, the department was responsible for various hardware technologies and even developed several arcade and console titles. In 2000, as technology evolved into the 3D era, Takeda's group spun-off and established itself as a division into Integrated Research & Development Division, and began spending longer periods of time researching and testing the various and rapidly evolving hardware that would power Nintendo's next generation of consoles.

The Nintendo IRD Division was broken up into two departments: the Integrated Research & Development Department (or IRD), which focused on the development of Nintendo home video game console hardware and associated peripherals, and the Research & Engineering Development Department (or RED), which focused on the development of Nintendo handheld video game console hardware and associated peripherals. Both departments were split into several sub-groups. Unlike the software departments, the hardware groups generally worked together on most projects.

On February 16, 2013,  Nintendo announced that the Nintendo Research & Engineering Department (or RED), the former hardware group specialized in all engineering and technological aspects of Nintendo's handheld development, was absorbed into Nintendo IRD Division. On September 16, 2015, IRD merged with the Nintendo System Development division, becoming the Nintendo Platform Technology Development.

History 
In December 1980, Genyo Takeda was promoted to manager of the Nintendo R&D3 department.

Hardware developed 
General Manager: Genyo Takeda

The Integrated Research & Development Department (or IRD) was the hardware development team responsible for all of Nintendo's home video game consoles and associated peripherals. The department was split into five different groups who worked together on most projects, with each group generally focusing on a different aspect of product design. The manager, Genyo Takeda, and most of the chief engineers originated from the Nintendo R&D3 hardware division.

Notes

References

Nintendo divisions and subsidiaries
Video game companies established in 1982
Video game companies disestablished in 2015
Defunct video game companies of Japan
Japanese companies disestablished in 2015
Japanese companies established in 1982
Tantalum(V) bromide. Tantalum(V) bromide is the inorganic compound with the formula Ta2Br10. Its name comes from the compound's empirical formula, TaBr5.  It is a diamagnetic, orange solid that hydrolyses readily.  The compound adopts an edge-shared bioctahedral structure, which means that two TaBr5 units are joined by a pair of bromide bridges. There is no bond between the Ta centres. Niobium(V) chloride, niobium(V) bromide, niobium(V) iodide, tantalum(V) chloride, and tantalum(V) iodide all share this structural motif.

Preparation and handling
The material is usually prepared by the reaction of bromine with tantalum metal (or tantalum carbide) at elevated temperatures in a tube furnace. The bromides of the early metals are sometimes preferred to the chlorides because of the relative ease of handling liquid bromine vs gaseous chlorine. Like other molecular halides, it is soluble in nonpolar solvents such as carbon tetrachloride (1.465 g/100 mL at 30 °C), but it reacts with some solvents.

It can also be produced from the more accessible oxide by metathesis using aluminium tribromide:
Ta2O5  + 3.3 AlBr3  →  2 TaBr5  +  3.3 Al2O3 
Carbothermal reduction of the oxide in the presence of bromine has also been employed, the byproduct being COBr2.

References

Bromides
Tantalum(V) compounds
Metal halides
Tantalum nitride. Tantalum nitride (TaN) is a chemical compound, a nitride of tantalum. There are multiple phases of compounds, stoichimetrically from Ta2N to Ta3N5, including TaN.

As a thin film TaN find use as a diffusion barrier and insulating layer between copper interconnects in the back end of line of computer chips. Tantalum nitrides are also used in thin film resistors.

Phase diagram
The tantalum - nitrogen system includes several states including a nitrogen solid solution in Tantalum, as well as several nitride phases, which can vary from expected stoichiometry due to lattice vacancies. Annealing of nitrogen rich "TaN" can result in conversion to a two phase mixture of TaN and Ta5N6.

Ta5N6 is thought to be the more thermally stable compound - though it decomposes in vacuum at 2500 °C to Ta2N. It was reported the decomposition in vacuum from Ta3N5 via Ta4N5, Ta5N6, ε-TaN, to Ta2N.

Preparation
TaN is often prepared as thin films. Methods of depositing the films include RF-magnetron-reactive sputtering, Direct current (DC) sputtering, Self-propagating high-temperature synthesis (SHS) via 'combustion' of tantalum powder in nitrogen, low‐pressure metalorganic chemical vapor deposition (LP‐MOCVD), ion beam assisted deposition (IBAD), and by electron beam evaporation of tantalum in concert with high energy nitrogen ions.

Depending on the relative amount of N2, the deposited film can vary from (fcc) TaN to (hexagonal) Ta2N as nitrogen decreases. A variety of other phases have also been reported from deposition including bcc and hexagonal TaN; hexagonal Ta5N6; tetragonal Ta4N5; orthorhombic Ta6N2.5, Ta4N, or Ta3N5. The electrical properties of TaN films vary from metallic conductor to insulator depending on the relative nitrogen ratio, with N rich films being more resistive.

Uses
It is sometimes used in integrated circuit manufacture to create a diffusion barrier or "glue" layers between copper, or other conductive metals. In the case of BEOL processing (at c. 20 nm), copper is first coated with tantalum, then with TaN using physical vapour deposition (PVD); this barrier coated copper is then coated with more copper by PVD, and infilled with electrolytically coated copper, before being mechanically processed (grind/polishing).

It also has application in thin film resistors. It has the advantage over nichrome resistors of forming a passivating oxide film which is resistant to moisture.

References

Nitrides
Tantalum compounds
Terbium(III) oxide. Terbium(III) oxide, also known as terbium sesquioxide, is a sesquioxide of the rare earth metal terbium, having chemical formula . It is a p-type semiconductor, which conducts protons, which is enhanced when doped with calcium. It may be prepared by the reduction of  in hydrogen at 1300 °C for 24 hours.

It is a basic oxide and easily dissolved to dilute acids, and then almost colourless terbium salt is formed.
 Tb2O3 + 6 H+ → 2 Tb3+ + 3 H2O

The crystal structure is cubic and the lattice constant is a = 1057 pm.

References

Terbium compounds
Sesquioxides
Semiconductor materials
Ditellurium bromide. Ditellurium bromide is the inorganic compound with the formula Te2Br. It is one of the few stable lower bromides of tellurium.  Unlike sulfur and selenium, tellurium forms families of polymeric subhalides where the halide/chalcogen ratio is less than 2.

Preparation and properties
Te2Br is a gray solid.  Its structure consists of a chain of Te atoms with Br occupying a doubly bridged site.  It is prepared by heating tellurium with the appropriate stoichiometry of bromine near 215 °C. The corresponding chloride and iodide, Te2Cl and Te2I, are also known.

Other tellurium bromides include the yellow liquid Te2Br2, the orange solid TeBr4, and the greenish-black solid TeBr2. Complexes of the type TeBr2(thiourea)2 are well characterized.

References

Bromides
Nonmetal halides
Tellurium compounds
Chalcohalides
Tritellurium dichloride. Tritellurium dichloride is the inorganic compound with the formula Te3Cl2. It is one of the more stable lower chlorides of tellurium.

Preparation and properties
Te3Cl2 is a gray solid.  Its structure consists of a long chain of Te atoms, with every third Te center carrying two chloride ligands for the repeat unit -Te-Te-TeCl2-.  It is a semiconductor with a band gap of 1.52 eV, which is larger than that for elemental Te (0.34 eV).  It is prepared by heating Te with the appropriate stoichiometry of chlorine.

References

Chlorides
Nonmetal halides
Tellurium halides
Inorganic polymers
Conductive polymers
Tellurium tetrabromide. Tellurium tetrabromide (TeBr4) is an inorganic chemical compound. It has a similar tetrameric structure to TeCl4.  It can be made by reacting bromine and tellurium. In the vapour TeBr4 dissociates:
TeBr4 → TeBr2 + Br2
It is a conductor when molten, dissociating into the ions TeBr3+ and Br−. When dissolved in benzene and toluene, TeBr4 is present as the unionized tetramer Te4Br16. In solvents with donor properties such as acetonitrile, CH3CN ionic complexes are formed which make the solution conducting:
TeBr4 + 2CH3CN → (CH3CN)2TeBr3+ + Br−

References

Bromides
Tellurium halides
Tellurium(IV) compounds
Chalcohalides
Tellurium tetraiodide. Tellurium tetraiodide (TeI4) is an inorganic chemical compound. It has a tetrameric structure which is different from the tetrameric solid forms of TeCl4 and TeBr4. In TeI4 the Te atoms are octahedrally coordinated and edges of the octahedra are shared.

Preparation 

Tellurium tetraiodide can be prepared  by reacting Te and iodomethane, CH3I. In the vapour TeI4 dissociates:

TeI4 → TeI2 + I2

It can be also obtained by reacting telluric acid with hydrogen iodide.

Te(OH)6 + HI → TeI4 + I2 + 6 H2O

It can also be obtained by reacting the elements, which can also produce tellurium diiodide and tellurium monoiodide, depending on the reaction conditions:

Te + 2 I2 → TeI4 

TeI4 → TeI2 + I2

Properties 

Tellurium tetraiodide is an iron-gray solid that decomposes slowly in cold water and quickly in warm water to form tellurium dioxide and hydrogen iodide. It is stable even in moist air and decomposes when heated, releasing iodine. It is soluble in hydriodic acid to form H[TeI5] and it is slightly soluble in acetone.

Tellurium tetraiodide is a conductor when molten, dissociating into the ions TeI3+ and I−. In solvents with donor properties such as acetonitrile, CH3CN ionic complexes are formed which make the solution conducting:

TeI4 + 2 CH3CN → (CH3CN)2TeI3+ + I−

Five modifications of tellurium tetraiodide are known, all of which are composed of tetrameric molecules. The δ form is the most thermodynamically stable form. This is structurally derived (as well as the α, β and γ forms) from the ε form.

References 

Iodides
Tellurium halides
Tellurium(IV) compounds
Chalcohalides
Mitsubishi B5M. The Mitsubishi B5M was an Imperial Japanese Navy Air Service (IJNAS) land-based attack aircraft, originally intended for aircraft carrier use. The B5M was also given the long formal designation  and Allied reporting name of Mabel. This aircraft was mistakenly known as the Nakajima Army 97 by the British.

The B5M was designed in response to a 1935 specification for a new bomber for use on the IJNAS aircraft carriers (Mitsubishi Navy Experimental 10-Shi Carrier Torpedo Attacker). The machine was to have a crew of three, folding wings for flight deck storage, a speed of not less than 322 km/h (200 mph), a flight endurance of not less than seven hours, and the ability to carry at least 800 kg (1,760 lb) of bombs - a tall order for a single-engine aircraft of the mid-1930s. It was intended as a backup for the Nakajima B5N "Kate" torpedo bomber. Although designed as a carrier-based aircraft, it was relegated to land-based torpedo bomber duties in World War II. One-hundred twenty-five were built.

Operational history
The aircraft that Mitsubishi produced first flew in 1937 and was an all-metal, low-wing cantilever monoplane with fixed undercarriage and large wheel spats. The crew of three sat in a long canopy that had a smooth transition to the fuselage. The B5M1s began equipping Japanese Naval units in late 1937, but their performance was never as satisfactory as other Japanese aircraft carrier-based bombers. The B5M1's performance was considered marginal, and only one-hundred twenty-five were manufactured. While they had originally been intended for aircraft carrier use, the majority were employed during the early months of World War II from land bases in Southeast Asia and China, where they were confronted by weak or no enemy fighter opposition. These machines ended their careers as trainers, target tugs, and kamikazes.

Variants
B5M1:Three-seat attack aircraft for the Imperial Japanese Navy.

Operators

Imperial Japanese Navy

Specifications (Mitsubishi B5M1)

See also

References

Bibliography

 Francillon, René J. Japanese Aircraft of the Pacific War. London: Putnam, 1970. .
 Francillon, René J. Japanese Aircraft of the Pacific War. London: Putnam & Company Ltd., 1979. .

External links

Carrier-based aircraft
B5M
B5M, Mitsubishi
Single-engined tractor aircraft
Low-wing aircraft
Aircraft first flown in 1937
Plain weave. Plain weave (also called tabby weave, linen weave or taffeta weave) is the most basic of three fundamental types of textile weaves (along with satin weave and twill). It is strong and hard-wearing, and is used for fashion and furnishing fabrics. Fabrics with a plain weave are generally strong, durable, and have a smooth surface. They are often used for a variety of applications, including clothing, home textiles, and industrial fabrics.

In plain weave cloth, the warp and weft threads cross at right angles, aligned so they form a simple criss-cross pattern. Each weft thread crosses the warp threads by going over one, then under the next, and so on. The next weft thread goes under the warp threads that its neighbor went over, and vice versa. 
 
 Balanced plain weaves are fabrics in which the warp and weft are made of threads of the same weight (size) and the same number of ends per inch as picks per inch.
 Basketweave is a variation of plain weave in which two or more threads are bundled and then woven as one in the warp or weft, or both.

A balanced plain weave can be identified by its checkerboard-like appearance. It is also known as one-up-one-down weave or over and under pattern.

Examples of fabric with plain weave are chiffon, organza, percale and taffeta.

Etymology 
According to the 12th-century geographer al-Idrīsī, in Andalusī-era Almería, imitations of Iraqī and Persian silks called «عَتَّابِيِّ» —‘attābī— were manufactured, which David Jacoby identifies as "a taffeta fabric made of silk and cotton (natural fibers) originally produced in Attabiya, a district of Baghdad." The word was adopted into Medieval Latin as attabi, then French as tabis and English as tabby, as in "tabby weave".

End uses 
Its uses range from heavy and coarse canvas and blankets made of thick yarns to the lightest and finest cambries and muslins made in extremely fine yarns. Chiffon, organza, percale and taffeta are also plain weave fabrics.

References

Citations

Bibliography

External links
 

Weaves
Woven fabrics
Fisher and Ludlow. Fisher and Ludlow was a British car body manufacturing company based in Castle Bromwich, Birmingham.

Operation
A high volume operation, Fisher and Ludlow built finished and trimmed car bodies which were then trucked to the "manufacturer"'s works to be fitted with all the mechanicals.

Ownership
It was acquired by the British Motor Corporation (BMC) in 1953. After the merger of BMC and Pressed Steel Company (PSC) in 1966, and the formation of the British Leyland Motor Corporation (BLMC) in 1968, the Fisher & Ludlow business was merged with the PSC business to form Pressed Steel Fisher under BLMC.

External links
 1950 metal finishing, Morris Minors
 1950 paint preparation, Standard Vanguards
 1950 final assembly, Bendix washing machines
 Grace's Guide - Fisher & Ludlow A short history of F & L. It contains a link to a 1950 publication detailing the first 100 years.
 Austin Memories
 Fisher & Ludlow Camping & Caravan Club 
The Fisher and Ludlow Camping and Caravan Club, which used to form part of the social club is still in existence and part of the British Leyland Camping and Caravan Association.

References

Coachbuilders of the United Kingdom
Spin pumping. Spin pumping is the dynamical generation of pure spin current by the coherent precession of magnetic moments, which can efficiently inject spin from a magnetic material into an adjacent non-magnetic material. The non-magnetic material usually hosts the spin Hall effect that can convert the injected spin current into a charge voltage easy to detect. A spin pumping experiment typically requires electromagnetic irradiation to induce magnetic resonance, which converts energy and angular momenta from electromagnetic waves (usually microwaves) to magnetic dynamics and then to electrons, enabling the electronic detection of electromagnetic waves. The device operation of spin pumping can be regarded as the spintronic analog of a battery.

Spin pumping involves an AC effect and a DC effect:
 The AC effect generates a spin current that oscillates at the same frequency with the microwave source.
 The DC effect requires that the magnetic dynamic is circularly polarized or elliptically polarized, whereas a linear oscillation can only generate an AC component.
 Both effects result in a net enhancement of the effective magnetic damping.

Spin pumping in ferromagnets
The spin current pumped into an adjacent layer by a precessing magnetic moment is given by

where  is the spin current (the vector indicates the orientation of the spin, not the direction of the current),  is the spin-mixing conductance characterizing the spin transparency of the interface,  is the saturation magnetization, and  is the time-dependent orientation of the moment.

Optical, microwave and electrical methods are also being explored. These devices could be used for low-power data transmission in spintronic devices or to transmit electrical signals through insulators.

Spin pumping in antiferromagnets
Spin pumping in antiferromagnetic materials does not vanish because the antiparallel magnetic moments contribute constructively rather than destructively to spin current, which was theoretically predicted in 2014. Since the frequency of antiferromagnetic resonance is much higher than that of ferromagnetic resonance, spin pumping in antiferromagnets can be utilized to study electromagnetic signals in the sub-terahertz and terahertz regime, which had been demonstrated by two independent experiments in 2020.

Besides higher frequency, spin pumping in antiferromagnets features the chirality degree of freedom of magnetic dynamics that does not exist in ferromagnets. For example, the spin currents pumped by the left-handed and the right-handed resonance modes are opposite in direction.

References

See also
Spintronics
Spin wave
Spin Hall effect

Spintronics
Juniper Level Botanic Gardens. Juniper Level Botanic Garden, is a 28+ acre botanical garden in Raleigh, North Carolina. The garden was established in 1988 by Tony Avent and his late wife Michelle. In 2018, Tony and Anita Avent gifted the privately owned Juniper Level Botanic Gardens to N.C. State University, while retaining lifetime rights. JLBG will become a sister institution to the J.C. Raulston Arboretum.

No synthetic non-organic fertilizers have been used in the garden since 1988, and all runoff (outside of hurricanes) is captured on-site through a series of rain gardens and recirculating runoff collection systems. A large on-site composting program supplies nutrients and compost for the gardens. The botanic garden is open eight weekends per year. It also hosts The Center for Mindfulness and Nonduality, established by Anita Avent in 2013.

See also 
 List of botanical gardens in the United States

External links 
Center for Mindfulness and Nonduality at Juniper Level Botanic Gardens
Juniper Level Botanic Gardens

Arboreta in North Carolina
Botanical gardens in North Carolina
Culture of Raleigh, North Carolina
Geography of Raleigh, North Carolina
Protected areas of Wake County, North Carolina
Mark Kryder. Mark Howard Kryder (born October 7, 1943 in Portland, Oregon) was Seagate Corp.'s senior vice president of research and chief technology officer. Kryder holds a Bachelor of Science degree in electrical engineering from Stanford University and a Ph.D. in electrical engineering and physics from the California Institute of Technology.

Kryder was elected a member of the National Academy of Engineering in 1994 for contributions to the understanding of magnetic domain behavior and for leadership in information storage research.

He is known for "Kryder's law", an observation from the mid-2000s about the increasing capacity of magnetic hard drives.

Kryder's law projection
A 2005 Scientific American article, titled "Kryder's Law", described Kryder's observation that magnetic disk areal storage density was then increasing at a rate exceeding Moore's Law. The pace was then much faster than the two-year doubling time of semiconductor chip density posited by Moore's law.

In 2005, commodity drive density of 110 Gbit/in2 (170 Mbit/mm2) had been reached, up from 100 Mbit/in2 (155 Kbit/mm2) circa 1990. This does not extrapolate back to the initial 2 kilobit/in2 (3.1 bit/mm2) drives introduced in 1956, as growth rates surged during the latter 15-year period.

In 2009, Kryder projected that if hard drives were to continue to progress at their then-current pace of about 40% per year, then in 2020 a two-platter, 2.5-inch disk drive would store approximately 40 terabytes (TB) and cost about $40.

The validity of the Kryder's law projection of 2009 was questioned halfway into the forecast period, and some called the actual rate of areal density progress the "Kryder rate". As of 2014, the observed Kryder rate had fallen well short of the 2009 forecast of 40% per year. A single 2.5-inch platter stored around 0.3 terabytes in 2009 and this reached 0.6 terabytes in 2014. The Kryder rate over the five years ending in 2014 was around 15% per year. To reach 20 terabytes by 2020, starting in 2014, would have required an implausibly high Kryder rate of better than 80% per year. 

By 2019, it was observed that Kryder's law "has proven to be outdated as the cost of media storage is decreasing at a slower pace than in the past and is now stabilising."

Awards and honors

Mark H. Kryder is an elected member of the National Academy of Engineering, a Fellow of the American Physical Society.   and a Fellow of the Institute of Electrical and Electronics Engineers (IEEE). He was Distinguished Lecturer for the IEEE Magnetics Society, and has been awarded the IEEE Magnetics Society Achievement Award and IEEE Reynold B. Johnson Information Storage Systems Award. Kryder received the Pingat Bakti Masyarakat from Singapore in their 2007 National Day Awards.

References

External links
 
 
 
 

1943 births
Living people
Computer hardware engineers
IBM employees
Stanford University School of Engineering alumni
Members of the United States National Academy of Engineering
American chief technology officers
California Institute of Technology alumni
Fellows of the IEEE
Fellows of the American Physical Society
Benjamin Franklin Medal (Franklin Institute) laureates