omniomni/omni-engineering huggingface dataset:
Avigo 10. The Avigo 10 (the only model of Avigo ever produced) is a Personal Digital Assistant ("PDA") that was marketed by Texas Instruments from the years 1997 through 2000. It was sold as a lower-priced competitor to the Palm Pilot.

Technology

Like the Palm Pilot, the Avigo has a touch-sensitive monochrome LCD screen, and can synchronize with a host PC using either a docking cradle or an infrared wireless connection. Unlike the Pilot, it has no built-in handwriting recognition capabilities; instead relying on the "T9" brand predictive text entry software, in addition to an on-screen keyboard.

Physically, the Avigo is larger than the Palm Pilot series, but smaller than the earlier Apple Newton, measuring 5.5 in. X 3.25 in. X .75 in. The casing is plastic, with a charcoal-gray matte texture. It has a hard flip-cover to protect the screen when not in use.

Electronically, the Avigo has relatively modest computing power for a device from that era. The CPU is a modified 8-bit Z-80 microprocessor running at eight megahertz. It uses bank-switching to exceed the 64 kibibyte memory restriction; a stock Avigo is equipped with one megabyte of flash memory with 680 kilobytes available. The device is primarily powered by two AAA cell batteries, and uses a CR2025 lithium cell for RAM backup.

Some of the features of the Avigo that distinguish it from competing devices produced at the same time are:

 The aforementioned T9 predictive text input
 Support for running programs in the "landscape" orientation, in addition to "portrait"
 A larger screen than the Pilot, with no silk-screened writing area
 A built-in database application
 A slot for a memory expansion card (which expands the flash memory capacity to two megabytes)

External links
 Archive of software for the Avigo
 SDK for Avigo
 DataMath Calculator Museum: Additional info on Avigo

Texas Instruments computers
Personal digital assistants
NepaLinux. NepaLinux was a Debian and Morphix-based Linux distribution focused on desktop usage in Nepali language computing.

It contains applications for desktop users, such as OpenOffice.org, Nepali GNOME and KDE desktops, Nepali input method editor.

NepaLinux was developed and distributed by Madan Puraskar Pustakalaya. Version 1.0 was produced as part of the PAN Localization Project, with the support of the International Development Research Centre (IDRC) of Canada. NepaLinux is an effort to promote free and open-source software in Nepal.

In October 2007, NepaLinux was the joint recipient of the Association for Progressive Communications' annual APC FOSS prize.

References

 

Knoppix
Language-specific Linux distributions
Linux distributions
Mercury zinc telluride. Mercury zinc telluride (HgZnTe, MZT) is a telluride of mercury and zinc, an alloy of mercury telluride and zinc telluride. It is a narrow-gap semiconductor material.

Mercury zinc telluride is used in infrared detectors and arrays for infrared imaging and infrared astronomy.

Mercury zinc telluride has better chemical, thermal, and mechanical stability than mercury cadmium telluride.  The bandgap of MZT is more sensitive to composition fluctuations than that of MCT, which may be an issue for reproducible device fabrication.  MZT is less amenable than MCT to fabrication of complex heterostructures by molecular beam epitaxy.

See also
 Cadmium zinc telluride
 Mercury cadmium telluride

External links
 National Pollutant Inventory - Mercury and compounds Fact Sheet

Mercury(II) compounds
Zinc compounds
Tellurides
II-VI semiconductors
Infrared sensor materials
Time diversity. Time diversity is used in digital communication systems to combat that the transmissions channel may suffer from error bursts due to time-varying channel conditions. The error bursts may be caused by fading in combination with a moving receiver, transmitter or obstacle, or by intermittent electromagnetic interference, for example from crosstalk in a cable, or co-channel interference from radio transmitters.

Time diversity implies that the same data is transmitted multiple times, or a redundant error correcting code is added. By means of bit-interleaving, the error bursts may be spread in time.

See also
 Diversity scheme

Radio resource management
Svatopluk Čech Bridge. Svatopluk Čech Bridge or Čech Bridge () is an arch bridge over the river Vltava in Prague, Czech Republic.

History and description
Construction of the bridge started in 1905 and finished in 1908. The bridge has a length of  (one of the shortest in Prague) and a width of .

The bridge connects the Prague districts Holešovice and the Old Town (Staré Město). The bridge is constructed of stone (pillars) and iron (arches). Up to 1961 the roadway was made of wood – a hard species named Jarrah from Australia. The road got slippery in the rain, so it was paved for safety reasons. 

The bridge's architects were Jan Koula and Jiří Soukup. Art Nouveau style sculptures (including four put on 17.5-m-high pylons) were created by sculptors Klusáček, Wurzel, Popp and Amort.

The bridge was named after Czech writer Svatopluk Čech who died around the time of the bridge's completion (1846–1908); its opening became a feat of the Czech nation. During the occupation of Czechoslovakia by Nazis, the name of the bridge was changed (1940–1945) to Mendel Bridge (Mendelův most), after Gregor Mendel (of German ethnicity).

In 1971–1975, Svatopluk Čech Bridge went through major reconstruction, in 1953–1956 and 2000–2001 through smaller reconstructions. In 1984–1987 the sculptures were repaired.

As the only Art Nouveau style bridge in the Czech Republic, it is protected by the state as a cultural monument. It is used by tramways, cars and pedestrians.

References

External links

Bridge details (cz)
Entry in encyclopedia of Czech bridges (cz)
Pictures of the bridge

Art Nouveau architecture in Prague
Art Nouveau bridges
Bridges completed in 1908
Bridges in Prague
Bridges over the Vltava
1908 establishments in Austria-Hungary
Arch bridges in the Czech Republic
Gallium phosphide. Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.

GaP has a microhardness of 9450 N/mm2, a Debye temperature of , and a thermal expansion coefficient of 5.3  K−1 at room temperature. Sulfur, silicon or tellurium are used as dopants to produce n-type semiconductors.  Zinc is used as a dopant for the p-type semiconductor.

Gallium phosphide has applications in optical systems. Its static dielectric constant is 11.1 at room temperature. Its refractive index varies between ~3.2 and 5.0 across the visible range, which is higher than in most other semiconducting materials. In its transparent range, its index is higher than almost any other transparent material, including gemstones such as diamond, or non-oxide lenses such as zinc sulfide.

Light-emitting diodes
Gallium phosphide has been used in the manufacture of low-cost red, orange, and green light-emitting diodes (LEDs) with low to medium brightness since the 1960s. It is used standalone or together with gallium arsenide phosphide.

Pure GaP LEDs emit green light at a wavelength of 555 nm. Nitrogen-doped GaP emits yellow-green (565 nm) light, zinc oxide doped GaP emits red (700 nm).

Gallium phosphide is transparent for yellow and red light, therefore GaAsP-on-GaP LEDs are more efficient than GaAsP-on-GaAs.

Crystal growth 
At temperatures above ~900 °C, gallium phosphide dissociates and the phosphorus escapes as a gas. In crystal growth from a 1500 °C melt (for LED wafers), this must be prevented by holding the phosphorus in with a blanket of molten boric oxide in inert gas pressure of 10–100 atmospheres.  The process is called liquid encapsulated Czochralski (LEC) growth, an elaboration of the Czochralski process used for silicon wafers.

References

Cited sources

External links
GaP. refractiveindex.info
 Ioffe NSM data archive

III-V semiconductors
Optical materials
Gallium compounds
Phosphides
III-V compounds
Light-emitting diode materials
Zincblende crystal structure
Aluminium gallium indium phosphide. Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies.

AlGaInP is used in heterostructures for high-brightness red, orange, green, and yellow light-emitting diodes. It is also used to make diode lasers.

Preparation
AlGaInP is typically grown by heteroepitaxy on gallium arsenide or gallium phosphide substrates in order to form a quantum well structure that can be fabricated into different devices.

Properties

The direct bandgap of AlGaInP encompasses the energy range of visible light (1.7 eV - 3.1 eV). By selecting a specific composition of AlGaInP, the bandgap can be selected to correspond to the energy of a specific wavelength of visible light. For instance, this can be used to obtain LEDs that emit red, orange, or yellow light.

Like most other III-V semiconductors and their alloys, AlGaInP possesses a zincblende crystal structure.

Applications
AlGaInP is used as the active material in:

Light emitting diodes of high brightness
Diode lasers
Quantum well structures
Solar cells (potential). The use of aluminium gallium indium phosphide with high aluminium content, in a five junction structure, can lead to solar cells with maximum theoretical efficiencies above 40%.

AlGaInP is frequently used in LEDs for lighting systems, along with indium gallium nitride (InGaN).

Diode laser
A diode laser consists of a semiconductor material in which a p-n junction forms the active medium and optical feedback is typically provided by reflections at the device facets. AlGaInP diode lasers emit visible and near-infrared light with wavelengths of 0.63-0.76 μm. The primary applications of AlGaInP diode lasers are in optical disc readers, laser pointers, and gas sensors, as well as for optical pumping, and machining.

Safety and toxicity aspects
The toxicology of AlGaInP has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium gallium phosphide sources (such as trimethylgallium, trimethylindium and phosphine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported in a review.

Illumination by an AlGaInP laser was associated in one study with slower healing of skin wounds in laboratory rats.

See also
 Indium phosphide
 Indium gallium phosphide
 Aluminium gallium phosphide
 Indium gallium arsenide phosphide

References

Notes

High Brightness Light Emitting Diodes:G. B. Stringfellow and M. George Craford, Semiconductors and Semimetals, vol. 48, pp. 97–226.

III-V semiconductors
Aluminium compounds
Gallium compounds
Indium compounds
Phosphides
III-V compounds
Light-emitting diode materials
Zincblende crystal structure
Aluminium gallium nitride. Aluminium gallium nitride (AlGaN) is a semiconductor material. It is any alloy of aluminium nitride and gallium nitride.

The bandgap of AlxGa1−xN can be tailored from 4.3eV (xAl=0) to 6.2eV (xAl=1).

AlGaN is used to manufacture light-emitting diodes operating in blue to ultraviolet region, where wavelengths down to 250 nm (far UV) were achieved, and some reports down to 222 nm. It is also used in blue semiconductor lasers.

It is also used in detectors of ultraviolet radiation, and in AlGaN/GaN High-electron-mobility transistors.

AlGaN is often used together with gallium nitride or aluminium nitride, forming heterojunctions.

AlGaN layers are commonly grown on Gallium nitride, on sapphire or (111) Si, almost always with additional GaN layers.

Safety and toxicity aspects
The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium nitride sources (such as trimethylgallium and ammonia) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.

References

External links
Gallium nitride quantum dots and deep UV light emission. GaN in AlN

III-V semiconductors
Aluminium compounds
Gallium compounds
Nitrides
III-V compounds
Light-emitting diode materials
Aluminium gallium phosphide. Aluminium gallium phosphide, , a phosphide of aluminium and gallium, is a semiconductor material. It is an alloy of aluminium phosphide and gallium phosphide. It is used to manufacture light-emitting diodes emitting green light.

See also
 Aluminium gallium indium phosphide

External links
Light-Emitting Diode - An Introduction, Structure, and Applications of LEDs

Aluminium compounds
Gallium compounds
Phosphides
III-V semiconductors
III-V compounds
Zincblende crystal structure
Gallium arsenide phosphide. Gallium arsenide phosphide () is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction x.

Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrates to form a GaP/GaAsP heterostructure. In order to tune its electronic properties, it may be doped with nitrogen (GaAsP:N).

See also
 Gallium arsenide
 Gallium indium arsenide antimonide phosphide
 Gallium phosphide
 Indium gallium arsenide phosphide
 Indium gallium phosphide

References

III-V semiconductors
Gallium compounds
Arsenides
Phosphides
III-V compounds
Light-emitting diode materials
Zincblende crystal structure
Power pack. Power pack or powerpack may refer to:

Devices
 Power Pack (battery series), a line of multi-cell batteries originally manufactured by Everready
 Powerpack (drivetrain), a term for a modular powertrain, particularly in heavy-duty uses such as construction, military, and railways
 Powerpack (rocket engine), the set of valves and turbopumps that provide the proper fuel/oxidizer mix to the injectors and combustion chamber in a liquid chemical rocket engine
 Tesla Powerpack, a 200 kWh rechargeable lithium-ion battery for industrial usage
 A series of batteries (or battery cells) also called a battery pack
 A power supply (especially in the context of model trains,  slot cars, and other hobbies)
 A radioisotope thermoelectric generator

Entertainment and media
 Power Pack, Marvel Comics' preteen superhero team
A science fiction term for an advanced battery pack or other power supply

Other uses
 Operation Power Pack, a United States military action in the Dominican Republic in 1965

See also

 
 
 Pack (disambiguation)
 Power (disambiguation)
Eta (glider). The Eta is a German-Italian Open Class two-seater flapped self-launching glider manufactured by ETA Aircraft. On introduction it was the highest performing glider.

Early flights
The Eta made its first flight on July 31, 2000 in Cochstedt, Germany, reaching a height of . The second flight was the first aerotow launch, reaching . The third flight was self powered and had no problems. The official presentation was on 1 August.

Production

Three Etas have been manufactured. The second prototype was extensively damaged in 2003 during the spin tests required for the type certification but both pilots parachuted to safety. The prototype was repaired and the tests completed successfully. The glider was to be produced by hand at a rate of about three per year.

Development
The Eta is an example of a trend in glider development in which private pilots initiate the development of new open class gliders. The private development of the Concordia sailplane promises a further elevation of the max lift-to-drag ratio to slightly over 75 at .

Operational history
An Eta participated in a World Championship for the first time in 2003 at Leszno. Its pilot, Janusz Centka, achieved an overall second place. Good placings have also been achieved by the Eta in later competitions. The glider is however hampered by the Open Class weight limitation which limits its wing loading in gusty weather to the advantage of its opponents.

Specifications

See also

Schleicher ASW 22
Binder EB29

References

External links
 Official site of the Eta Glider project.

2000s German sailplanes
T-tail aircraft
Aircraft first flown in 2000
Glaser-Dirks DG-400. The Glaser-Dirks DG-400 is a single-seat self-launching motorglider that was produced by Glaser-Dirks between 1981 and 1992. It was the first self-launching motorglider with retractable engine and propeller to be produced in large numbers.

Development
The cost of carbon-fibre had fallen enough in the late 1970s to allow its use in the wing spars of high-performance gliders. Glaser-Dirks introduced a carbon wing variant of the DG-200 about this time. Designer Wilhelm Dirks realised that the span, strength and very low weight of this wing allowed for a self-launching engine to be carried in the glider without an unacceptable penalty when soaring in weak conditions. The DG-400 was created as a result. It first flew in May 1981.

The DG-400 uses the wings and most systems of the DG-202. It has a modified fuselage with a slightly enlarged tailcone and carbon fibre reinforcements to accommodate the engine, which is a relatively large unit with electric starter and electric retraction. This powerful installation, with a user-friendly engine control unit, made the DG-400 easier to operate than other self-launching gliders.

As was typical for the time, the engine, propeller and supporting pylon constitute a single unit that extends into the airflow (in more recent self-launchers the engine usually stays inside the fuselage). The type may be flown either with 15 metre or 17 metre wingtips.

The DG-400 was not aimed at competitions, but rather at leisure flying. Nevertheless, several World Gliding Records have been achieved flying this type.

Specifications (17 metre wings)

References

External links

DG-Flugzeugbau website
Sailplane Directory
DG400 pictures & details
German Gliding Magazine

1980s German sailplanes
DG Flugzeugbau aircraft
Single-engined tractor aircraft
Mid-engined aircraft
Motor gliders
T-tail aircraft
Mid-wing aircraft
Aircraft first flown in 1981
Canadian Centre for Climate Modelling and Analysis. The Canadian Centre for Climate Modelling and Analysis (CCCma) is part of the Climate Research Division of Environment Canada and is located at the University of Victoria, Victoria, British Columbia. Its purpose is to develop and apply climate models to improve understanding of climate change and make quantitative projections of future climate in Canada and globally. Its seasonal forecasting system provides climate forecasts over Canada on timescales of months to years.

Current models 
 CGCM3 The third generation coupled global climate model
 CGCM4 The fourth generation coupled global climate model
 CanESM2 The second generation Canadian Earth System Model
 CanESM5 The Canadian Earth System Model version 5
 CanRCM The Canadian Regional Climate Model

See also 
 National Center for Atmospheric Research
 Earth Simulator
 HadCM3 - explanation of an AOGCM
 EdGCM - an educational version of a GCM

Notes

References

External links 
Official website
 Dimitri Lascaris. (December 10, 2019) New Climate Model Predicts Alarming Levels of Global Heating. Retrieved December 10, 2019

Climate modeling
Climate change organizations based in Canada
Climatological research institutes
Environment and Climate Change Canada

University of Victoria
Federal government buildings in British Columbia
Adobe Source Libraries. Adobe Source Libraries are a set of libraries initially developed by Adobe for internal use and later made open source.

These libraries provide functionality to specify a GUI's definition and behavior. They are organized around the two main modules Adam and Eve. 

 Adam offers the ability to specify the state chart driving a GUI element behavior.
 Eve offers a GUI description language and a parser able to generate the described GUI from that description.

External links
Up to date source code
Legacy documentation

Source Libraries
Software using the MIT license
SAPS III. The Simplified Acute Physiology Score III (SAPS III) is a system for predicting mortality, one of several ICU scoring systems. It is a supplement to the SAPS II scoring system. It has been designed to provide a real-life predicted mortality for a patient by following a well defined procedure, based on a mathematical model that needs calibration. Predicted mortalities are good when comparing groups of patients, and having near-real-life mortalities means, that this scoring system can answer questions like "if the patients from hospital A had been in hospital B, what would their mortality have been?".

However, in order to achieve this functionality, you must calibrate the system, which is additional effort, and it is difficult to compare two groups of patients if they were not scored using the same calibration. SAPS III is therefore not suitable by itself for publishing data about the morbidity of a single group of patients.

The SAPS III project is conducted by the SAPS III Outcomes Research Group (SORG).

Some shared calibrations make it possible to calculate a calibration-specific SAPS III score using paper forms.

DID SAPS III

The Danish Intensive care Database (DID) has a standard-form to calculate SAPS III scores for their specific purpose, and require participating ICUs to provide:

 Age
 Length of hospital stay before admission to the ICU
 What kind of department did the patient arrive from
 A checklist of specific diagnoses that the patient has had
 Earlier treatments using vasoactive drugs
 Was the patient admitted acutely or planned?
 A checklist of why the patient was admitted to the ICU
 Surgery: Acute surgery, planned surgery or no surgery
 Type of surgery
 Acute infections at admission
 Estimated Glasgow Coma Score
 Serum Bilirubin
 Body temperature
 Serum Creatinine
 Heart Rate
 Leukocyte count
 pH
 Thrombocyte (platelet) count
 Systolic blood pressure
 Oxygenation (PaO2/FiO2 and PaO2, ventilation)

Each of these values are given points based on value intervals, similar to SAPS II, and a score is calculated. The actual result is not a general SAPS III score, but can be considered an updated version of SAPS II.

References

External links
 The SAPS III Outcome Research Group
 SAPS 3—From evaluation of the patient to evaluation of the intensive care unit.
 Guide to registering SAPS III (Danish)
 Online calculator of the SAPS III

Diagnostic intensive care medicine
Medical scoring system
Acer PICA. The M6100 PICA is a system logic chipset designed by Acer Laboratories introduced in 1993. PICA stands for Performance-enhanced Input-output and CPU Architecture. It was based on the Jazz architecture developed by Microsoft and supported the MIPS Technologies R4000 or R4400 microprocessors. 

The chipset was designed for computers that run Windows NT, and therefore used ARC firmware to boot Windows NT. The chipset consisted of six chips: a CPU and secondary cache controller, a buffer, a I/O cache and bus controller, a memory controller, and two data buffers.

PICA was used by Acer in its Formula 4000 personal workstation, which NEC sold under the OEM name RISCstation Image.

See also
 DeskStation Technology

References

 "Acer Launches Set For Building R4400 NT Machines". (29 March 1993). Computergram International.
 

PICA
PICA
MIPS architecture
EBW. EBW may refer to:
Electron beam welding, a fusion welding process
Exploding bridgewire detonator, a device for detonating explosive charges 
European Bike Week, an annual event held at the Faaker See in Carinthia, Austria for fans of motorbikes
EBW (rail company) (also known as "EBW cargo"), a private rail cargo company based in Dachau,  Germany