Carl Frosch

Carl JohnFrosch (6 suwee 1908 – 18 mee 1984) ko wiɗtoowo to Bell Labs, mo Lincoln Derick mahi gadano e mbaydi mbaylaandi (effet) gadano silikon. E hitaande 1955 ɓe njiyti e aksidaa wonde silikon ina waawi reeneede e dioksiid silikon tawa ina huutoroo oksijen no haanirta nii so ina wuli, ɓe patent feere ndee.[3][4] Hono ngool coftal ɓalli foolii caɗeele ngonkaaji dowri tawaaɗi e geɗe cirkooji silikon kuutortooɗi. Yiytugol ngol hollitii kadi mbaawkaaji golle mbayliigu silikon.
Nder hitaande 1957 Frosch e Derick haɓɓiti heɓuki maɓɓe nder silisiyam dow daande silisiyam bee silisiyam dioxide, huutoree SiO2 daande e masking ngam waɗugo daande semiconductor, ngam waɗugo silisiyam diokside field effect transistors, ngam non ɓe footi MOSFET arande.  Transistors maɓɓe laati arandeeji nder nder ɗi ɓandu e fuɗɗam ɗon hawti dow duniyaaru, hollaago ngam passivation surface silicon dioxide ɗon hakkilana e haɓɓugo wafers silicon. 

Nder Bell Labs, ko nafata masin masin masin masin no Frosch waɗi. Kuugal maɓɓe waɗi nder Bell Labs nder laawol BTL memos ngam ɓe wurtina nder hitaande 1957. Nder Shockley Semiconductor, William Shockley waɗi haɓɓuki ɗemngal maɓɓe nder lewru Desemba 1956 to yimɓe maako fuu, hawti e Jean Hoerni. Hono huutoraade hujja silisiyam dioxide dow silisiyam surface, Hoerni holli waɗugo transistors je ɗon haani e darnde silisiyam dioxide.  Ɓaawo, Jean Hoerni, wakkati o huuwi e Fairchild semiconductor, o waɗi patentannde fu e nder hitaande 1959.

 Ɗuɓɓudi gabbiiɗi 
Frosch e Derrick waɗi masin masin masin masinji masinji ɗi silikiyam dioxide nder hitaande 1957. Gooto nanngina MOSFETs moderne e gooto nannginanki NPNP, nannginanke IGBTs moderne.

 Firooji 

 Michael Riordan & Lillian Hoddeson (1997) Crystal Fire, page 222, W. W. Norton &amp; Company   . 

 Ko'e laaɓu

Category:Pages with unreviewed translations