Udo Pohl

Udo W. Pohl (born August 14, 1955 in Düsseldorf, Germany) is a German physicist and was Professor at the Technical University of Berlin. His work on semiconductor physics focuses on quantum dots.
== Education and career ==
Pohl received his physics education from the RWTH Aachen, Germany, the Free University and the Technical University in Berlin, Germany. There he received his PhD in 1988 in the field of optical spectroscopy of transition-metal impurities in II-VI semiconductors;U. W. Pohl, H.-E. Gumlich, Optical transitions of different Mn-ion pairs in ZnS, Physical Review B 40, 1194-1201 (1989). U. W. Pohl, A. Ostermeier, W. Busse, H.-E. Gumlich, Influence of stacking faults in polymorphic ZnS on the d5 crystal field states of Mn2+, Physical Review B 42, 5751-5758 (1990). G. Goetz, U. W. Pohl, H.-J. Schulz, Optical properties of vanadium ions in ZnSe, Journal of Physics: Condensed Matter 4, 8253-8266 (1992). M. U. Lehr, B. Litzenburger, J. Kreissl, U. W. Pohl, H. Selber, H.-J. Schulz, A. Klimakow, L. Worschech, Identification of near-infrared Cr2+ luminescence in ZnSe, Journal of Physics: Condensed Matter 9, 753-763 (1997). excaminers were Hans-Eckhart Gumlich and Daniel Curie.
In 1989 Pohl became head of the "Materials Lab" at the Institute of Solid State Physics of the Technical University Berlin (since 2004 Center of Nanophotonics, with Dieter Bimberg as CEO). Pohl coordinated the installation of a modernen semiconductor process technology, the installation of equipment for the precise fabrication of crystalline semiconductot structures, and the installation of a high performance x-ray difractometry. In addition to basic studies on growth of semiconductor layers K. Bellmann, U. W. Pohl, C. Kuhn, T. Wernicke, M. Kneissl, Controlling the morphology transition between step-flow growth and step-bunching growth, J. Crystal Growth 478, 197 (2017). U. W. Pohl, C. Möller, K. Knorr, W. Richter, J. Gottfriedsen, H. Schumann, A. Fielicke, K. Rademann, Tertiarybutylhydrazine: a new precursor for the MOVPE of III nitrides, Materials Science and Engineering B 59, 20-23 (1999). L. Müller-Kirsch, R. Heitz, U. W. Pohl, D. Bimberg, I. Häusler, H. Kirmse, W. Neumann, Temporal evolution of GaSb/GaAs quantum dot formation, Applied Physics Letters 79, 1027-1029 (2001). U. W. Pohl, K. Pötschke, I. Kaiander, J.-T. Zettler, D. Bimberg, Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy. J. Crystal Growth 272, 143-147 (2004). U. W. Pohl, J. Gottfriedsen, H. Schumann, Nitrogen doping of MOVPE-grown ZnSe using hydrazine derivatives, J. Crystal Growth 209, 683-686 (2000). A. G. Kontos, E. Anastassakis, N. Chrysanthakopoulos, M. Calamiotou, U. W. Pohl, Strain profiles in overcritical (001) ZnSe/GaAs heteroepitaxial layers, J. Applied Physics 86, 412-417 (1999). his scientific work focuses particularly on the structural and optical properties of quantum dots based on II-VIV. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U. W. Pohl, D. Bimberg, R. Steingrüber, Effect of random field fluctuations on excitonic transitions of individual CdSe quantum dots, Physical Review B 61, 9944 (2000). S. Rodt, V. Türck, R. Heitz, F. Guffarth, R. Engelhardt, U. W. Pohl, M. Straßburg, M. Dworzak, A. Hoffmann, D. Bimberg, Lateral carrier transfer in CdxZn1-xSe/ZnSySe1-y quantum dot layers, Physical Review B 67, 235327 (2003). U. W. Pohl, R. Engelhardt, V. Türck, D. Bimberg, MOCVD of vertically stacked CdSe/ZnSSe quantum islands, J. Crystal Growth 195, 569-573 (1998). and III-VU. W. Pohl, K. Pötschke, A. Schliwa, F. Guffarth, D. Bimberg, N. D. Zakharov, P. Werner, M. B. Lifshits, V. A. Shchukin, D. E. Jesson, Evolution of a multimodal distribution of self-organized InAs/GaAs quantum dots, Physical Review B 72, 245332 (2005). R. Seguin, A. Schliwa, S. Rodt, K. Pötschke, U. W. Pohl, D. Bimberg, Size-dependent exciton fine-structure splitting in self-organized InAs/GaAs quantum dots, Physical Review Letters 95, 257402 (2005). S. Harrison, M. P. Young, P. D. Hodgson, R. J. Young, M. Hayne, L. Danos, A. Schliwa, A. Strittmatter, A. Lenz, H. Eisele, U. W. Pohl, D. Bimberg, Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs, Physical Review B 93, 085302 (2016). A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, M. Dähne, Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix, Applied Physics Letters 81, 5150-5152 (2002). compound semiconductors. Using active GaAs-based III-V-quantum dots, novel devicesD. Bimberg, U. W. Pohl, Quantum dots: promises and accomplishments, Materials Today 14, 388 (2011). such as |lasersR. Sellin, I. Kaiander, D. Ouyang, T. Kettler, U. W. Pohl, D. Bimberg, N. D. Zakharov, P. Werner, Alternative-precursor MOCVD of self-organized InGaAs/GaAs quantum dots and quantum dot lasers, Applied Physics Letters 82, 841-843 (2003). B. Herzog, B Lingnau, M. Kolarczik, S. Helmrich, A.W. Achtstein, K. Thommes, F. Alhussein, D. Quandt, A. Strittmatter, U.W. Pohl, O. Brox, M. Weyers, U. Woggon, K. Lüdge, N. Owschimikow, Broadband semiconductor light sources operating at 1060 nm based on InAs:Sb/GaAs submonolayer quantum dots, IEEE J. Selected Topics Quantum Electronics 25, 1900310 (2019). T. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov, High-power semiconductor disk-laser based on InAs/GaAs submonolayer quantum dots, Applied Physics Letters 92, 101123 (2008). and single-photon emittersW. Unrau, D. Quandt, J.-H. Schulze, T. Heindel, T.D. Germann, O. Hitzemann, A. Strittmatter, S. Reitzenstein, U.W. Pohl, D. Bimberg, Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection, Applied Physics Letters 101, 211119 (2012). F. Kießling, T. Niermann, M. Lehmann, J.-H. Schulze, A. Strittmatter, A. Schliwa, U. W. Pohl, Strain field of a buried oxide aperture, Physical Review B 91, 075306 (2015). could be realised at the Institute of Solid State Physics with his involvement. 
In 1999 Pohl qualified as a professor with works on epitaxy (crystalline layer growth) of semiconductors. In 2009 he was appointed Adjunct Professor for experimental physics at Technical University of Berlin.
In 2013 Pohl published the first edition of the textbook Epitaxy of Semiconductors. With Karl W. Böer he wrote the handbook Semiconductor Physics, the first edition published in 2018. He additionally authored 13 book chapters, over 200 journal articles on optical and structural properties of semiconductors, and 3 Patents. Pohl is co-editor of the Springer Series in Materials Science.
Pohl is member of the German Physical Society, has given keynote addresses at internationalen conferences, and participated in their program committees. Besides his activities in physics Pohl is member of the supervisory board of the Pumacy Technologies AG and is trustee of the foundation Intakt Umweltstiftung.
== Monographs ==
*Udo W. Pohl, Epitaxy of Semiconductors.1. Edition: Introduction to Physical Principles, Springer Heidelberg New York Dordrecht London, 2013. ISBN 978-3-642-32969-2.2. Edition: Physics and Fabrication of Heterostructures, Springer Nature Switzerland AG, Cham, Switzerland, 2020. ISBN 978-3-030-43868-5.
*Karl W. Böer, Udo W. Pohl, Semiconductor Physics.1. Edition: Springer International Publishing AG, Cham, Switzerland, 2018. ISBN 978-3-319-69148-0.2. Edition: Springer Nature Switzerland AG, Cham, Switzerland, 2023. ISBN 978-3-031-18285-3.
Category:1955 births
Category:German people
Category:German physicists